• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.5
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• pp.696-702
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• 2002

The BST $({Bal-xSrxTiO_3})$ (50/50) thin film has been grown by RF magnetron reactive sputtering and its characteristics such as crystallization, surface roughness, and electrical properties have been investigated with varying the film thickness. The crystallization and surface roughness of BST thin film are investigated by using XRD and AFM, respectively. The BST thin film annealed at $800^{\circ}C$ for 2 min has pure perovskite structure and good surface roughness of 16.1$\AA$. As the film thickness increases from 80 nm to 240 nm, the dielectric constant at 10 KHz increases from 199 to 265 and the leakage current density at 250 ㎸/cm decreases from $0.779 {\mu}A/{cm^2} to 0.184 {\mu}A/{cm^2}$. In the case of 240 nm-thick BST thin film, the charge storage density and leakage current density at 5V are 50.5 fC/${{\mu}m^2} and 0.182 {\mu}A/{cm^2}$, respectively. The values indicate that the BST thin film is a very useful dielectric material for the DRAM capacitor.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.10
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• pp.1169-1176
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• 2010

The RF front-end for L1/L2 dual-band Global Positioning System(GPS) receiver is presented in this paper. The RF front-end(down-converter) using low IF architecture consists of a wideband low noise amplifier(LNA), a current mode logic(CML) frequency divider and a I/Q down-conversion mixer with a poly-phase filter for image rejection. The current bleeding technique is used in the LNA and mixer to obtain the high gain and solve the head-room problem. The common drain feedback is adopted for low noise amplifier to achieve the wideband input matching without inductors. The fabricated RF front-end using $0.18{\mu}m$ CMOS process shows a gain of 38 dB for L1 and 41 dB for L2 band. The measured IIP3 is -29 dBm in L1 band and -33 dBm in L2 band, The input return loss is less than -10 dB from 50 MHz to 3 GHz. The measured noise figure(NF) is 3.81 dB for L1 band and 3.71 dB for L2 band. The image rejection ratio is 36.5 dB. The chip size of RF front end is $1.2{\times}1.35mm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.13-19
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• 2001

We report on the fabrication and characterization of $Al_{0.3}Ga_{0.7}N$ HFETs with different barrier layer thickness which were grown using plasma-assisted molecular beam epitaxy (PAMBE). The barrier thickness of $Al_{0.3}Ga_{0.7}N$/GaN HFETs could be optimized in order to maximize 2 dimensional electron gas induced by piezoelectric effect without the relaxation of $Al_{0.3}Ga_{0.7}N$ layer. $Al_{0.3}Ga_{0.7}N$/GaN (20 nm/2 mm) HFET with 0.6 ${\mu}m$-long and 34 ${\mu}m$-wide gate shows saturated current density ($V_{gs}=1\;V$) of 1.155 A/mm and transconductance of 250 ms/mm, respectively. From high frequency measurement, the fabricated $Al_{0.3}Ga_{0.7}N$/GaN HFETs showed $F_t=13$ GHz and $F_{max}=48$ GHz, respectively. The uniformity of less than 5% could be obtained over the 2 inch wafer. In addition to the optimization of epi-layer structure, the relation between breakdown voltage and high frequency characteristics has been examined.

• Journal of Sensor Science and Technology
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• v.19 no.4
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• pp.320-327
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• 2010

In this paper, electrostatically actuated direct contact type RF MEMS switches have been designed and demonstrated. As driving structures of the switch, cantilever, bridge, and torsion spring beam structures are used and the actuation voltage characteristics of the switches have been compared and discussed. The designed RF switches are fabricated with the surface micromachining technology using the electroplated gold and nickel structures. The characteristics of the fabricated switches are measured and analyzed. The switch, which is fabricated using the 510 ${\mu}m$-length bridge structure with the thickness of 1.5 ${\mu}m$, is actuated with 15 V driving voltage. The insertion losses are less than 0.2 dB over the measured frequency ranges from 0 to 20 GHz and the isolations are more than 30 dB.

• Journal of the Korean Electrochemical Society
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• v.3 no.3
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• pp.178-181
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• 2000

In this experiments, tin oxide thin film anode for microbattery was deposited by using RF magnetron sputtering. The RF power and operating pressure during deposition were fixed at $2.5W/cm^2$ and 10mTorr respectively. The partial pressure of oxygen was varied from $0\%\;to\;100\%$ to control oxygen content and metal Sn chips were used further reducing of oxygen content. According to reduction in the oxygen content formation of the irreversible $Li_2O$ was reduced a thin film anode of $SnO_x$ of high capacity was fabricated. The optimum $SnO_x$, thin film was $SnO_{1.43}$ which exhibited a reversible capacity of $ 500{\mu}Ah/cm^2{\mu}m$ and exhibited good reversibility.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.5
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• pp.49-54
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• 2009

This paper describes implementation of the 1.9GHz RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma }-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get good performance of speed, power consumption, and wide tuning range, N-P MOS core structure has been used in design of the VCO. The chip area including pads for testing is $1.2{\times}0.7mm^2$, and the chip area only core for IP in SoC is $1.1{\times}0.4mm^2$. The test results show that there is no special spurs except -63.06dB of the 6MHz reference spurs in the PLL circuitry. There is good phase noise performance like -116.17dBc/Hz in 1MHz offset frequency.

• The Korea Journal of Herbology
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• v.26 no.1
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• pp.87-96
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• 2011

Objectives : The aerial parts of Rumex japonicus Houtt. (RF) is used by traditional clinics to treat parasite infection in East asia. This study aims a verification of anti-oxidative and anti-inflammatory effects of RF methanol extract. Methods : Anti-oxidative effects of RF were measured by scavenging activities of DPPH, superoxide, nitric oxide (NO) and peroxynitrite radicals. And also scavenging activities of anti-oxidation in lipopolysaccharide (LPS)-treated RAW 264.7 cells were measured. The inhibitory effects against the production of inflammatory mediators including NO, prostaglandin $E_2$ ($PGE_2$), tumor necrosis factor-${\alpha}$ (TNF-${\alpha}$), interleukin-$1{\beta}$ (IL-$1{\beta}$), IL-6, inducible nitric oxide synthase (iNOS), cyclooxygenase-2 (COX-2), and the translocation of nuclear factor (NF)-${\kappa}B$ in LPS-stimulated RAW 264.7 cells by RF were tested. Results : RF scavenged DPPH, superoxide, NO and peroxynitrite radicals, and RF (at $200{\mu}g/m{\ell}$) reduced the inflammatory mediators definitely. Conclusions : These results indicate that RF may be a potential drug source for oxidative stress related inflammatory diseases.

• Archives of Pharmacal Research
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• v.5 no.1
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• pp.7-12
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• 1982

Ginsenosides Rb1, Rb2, Rc, Rd, Re, Rf and Rg1 were effectively isolated from ginseng root by preparative liquid chromatography (LC) on two PrepPAK-500/c18 cartridges in series and semipreparative LC on a .mu. Bondapak cabohydrate analysis column, a .mu.Bondapak C18 column or a .mu. Porasil column. The identities of the isolated ginsenosides were confirmed by analytical high-performance liquid chromatography (HPLC) and infrared spectrophotometry. By this method large scale isolation of pure ginsenosides was efficiently accomplished.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.43-44
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• 2008

실리콘 웨이퍼 위에 마이크로웨이브 플라즈마 화학증착법으로 나노결정질 다이아몬드 박막을 형성하고 그 위에 RF 마그네트론 스퍼터로 ZnO 박막을 적층한 후 SAW(Surface Acoustic Wave) 필터를 제작하여 평가하였다. 기판온도, 작업압력, Ar/$CH_4$ 비율을 변화시켜 최적공정 조건에서 30nm 수준의 결정립을 갖는 $4{\mu}m$ 두께의 다이아몬드 박막을 얻었고, RF 인가전력, 기판온도, Ar/$O_2$ 비율을 조정하여 결정성이 우수하고, 표면 거칠기가 좋으며, 높은 비저항을 갖는 $2.2{\mu}m$ 두께의 ZnO 박막을 얻었다. 박막의 특성은 FESEM과 XRD로 평가하였다. Lift-off 식각공정을 이용하여 일정한 선폭과 간격(Line/Space : 1.5/$1.5{\mu}m$)을 갖는 구리 전극 패턴을 형성하였다. Network Analyzer를 이용하여 측정한 SAW 필터의 중심주파수는 1.67GHz이었다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.3
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• pp.454-459
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• 2007

In this work, micro-scale, high-performance solenoid-type RF chip inductors utilizing amorphous $Al_2O_3$ core material were investigated. The size of the chip inductors was $0.86{\times}0.46{\times}0.45mm^3$ and copper(Cu) wire with $27{\mu}m$ diameter was used as the coil. High frequency characteristics of the inductance(L), quality factor(Q), impedance(Z), and equivalent circuit parameters of the RE chip inductors were measured and analyzed using an RF impedance/material analyzer(HP4291B with HP16193A test fixture). It was observed that the RF chip inductors with the number of turns of 9 to 12 have the inductance of 21 to 34nH and exhibit the self-resonant frequency(SRF) of 5.7 to 3.7GHz. The SRF of inductors decreases with increasing the inductance and inductors have the quality factor of 38 to 49 in the frequency range of 900MHz to 1,7GHz.