• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.215-219
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• 2004

ZnO epitaxial films have been grown on a (0001)sapphire substrate by RF magnetron sputtering. The single crystalline ZnO films were grown at the condition of growth rate of about 0.1~0.2 $\mu\textrm{m}$/hr and the substrate temperature of $600^{\circ}C$. The film thickness was about 400~500 nm. The thin film quality and micro-structure have been evaluated by XRD and TEM observation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.1009-1014
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• 2012

This paper has proposed a 2,500 MHz ~ 2,570 MHz 0.13-${\mu}m$ CMOS RF front-end transmitter for LTE-Advanced systems. The proposed RF front-end transmitter is composed of a quadrature up-conversion mixer and a driver amplifier. The measurement results show the maximum output power level is +6 dBm and the suppression ratio for the image sideband and LO leakage are better than -40 dBc respectively. The fabricated chip consumes 36 mA from a 1.2 V supply voltage.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.751-754
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• 2003

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with pseudomorphic HEMTs. We have studied the calibration on the DC and RF characteristics of the MHEMT device using I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A1$_{0.48}$As modulation-doped heterostructure on the GaAs wafer. For the optimized device performance simulation, we calibrated the device performance of 0.1-${\mu}{\textrm}{m}$ $\Gamma$-gate MHEMT fabricated in our research center using the 2D ISE-DESSIS device simulator. With this calibrated parameter set, we have obtained very good reproducibility. The device simulation on the DC and RF characteristics exhibits good reproducibility for our 0.1-${\mu}{\textrm}{m}$ -gate MHEMT device compared with the measurements. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.ormance.

• Journal of Ginseng Research
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• v.33 no.1
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• pp.8-12
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• 2009

A simple gradient HPLC method for rapid determination of major ginsenosides ($Rg_1$ and $Rb_1$) and unique ginsenoside (Rf) of Korean ginseng (Panax ginseng C.A. Meyer) was developed. Within 50min, three ginsenosides have been separated and identified on $\mu$-Bondapak $C_{18}$ column ($3.9{\times}300\;mm$, $10{\mu}m$) with gradient elution using water and acetonitrile as a mobile phase. The method was validated in terms of linearity, accuracy, and precision. The correlation coefficients ($r^2$) for calibration curves of ginsenosides were over 0.9997. The developed HPLC method was successfully applied to the analysis of ginseng samples and the recoveries of ginsenosides were in the range of $101.1{\sim}115%$ with RSD<3.2%. The developed method could be used for rapid evaluation of the ginsenosides $Rg_1$, $Rb_1$, and Rf.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.4
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• pp.506-517
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• 2015

This paper presents a 1.248 Gb/s - 2.918 Gb/s low-power receiver MIPI-DigRF M-PHY with a fully digital frequency detection loop. MIPI-DigRF M-PHY should be operated in a very short training time which is $0.01{\mu}s$ the for HS-G2B mode. Because of this short SYNC pattern, clock and data recovery (CDR) should have extremely fast locking time. Thus, the quarter rate CDR with a fully digital frequency detection loop is proposed to implement a fast phase tracking loop. Also, a low power CDR architecture, deserializer and voltage controlled oscillator (VCO) are proposed to meet the low power requirement of MIPI-DigRF M-PHY. This chip is fabricated using a $0.11{\mu}m$ CMOS process, and the die area is $600{\mu}m{\times}250{\mu}m$. The power consumption of the receiver is 16 mW from the supply voltage of 1.1 V. The measured lock time of the CDR is less than 20 ns. The measured rms and peak jitter are $35.24ps_{p-p}$ and $4.25ps_{rms}$ respectively for HS-G2 mode.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.2
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• pp.273-278
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• 2011

This paper has proposed a dual-band transmitter RF Front-end for IMT-Advanced systems which has been implemented in a 0.13-${\mu}m$ CMOS technology. The proposed dual-band transmitter RF Front-End covers 2300~2700 MHz, 3300~3800 MHz frequency ranges which support 802.11, Mobile WiMAX, and IMT-Advanced system. The proposed dual-band transmitter RF Front-End consumes 45 mA from a 1.2 V supply voltage. The performances of the transmitter RF Front-End are verified through post-layout simulations. The simulation results show a +0 dBm output power at 2 GHz band, and +1.3 dBm output power at 3 GHz band.

• The Journal of Korean Medicine Ophthalmology and Otolaryngology and Dermatology
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• v.20 no.1 s.32
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• pp.80-98
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• 2007

Objectives : This study was carried out to evaluate anti-oxydative, anti-tumor effect for clinical application of Whakijogyungtang (WJT) Results : 1. DPPH radical scavenging activities of WJT water extracts(Exts) were in proportion as concentration of WJT.(3 ${\mu}g/ml:12.6{\pm}2.3$ %) 2. ABTS+ scavenging activities of WJT water Exts were more effective in high density.(3 ${\mu}g/ml:4.3{\pm}1.6$ %, 10 ${\mu}g/ml$: $11.8{\pm}2.5$ %, 30 ${\mu}g/ml:45.3{\pm}3.2%$ 100 ${\mu}g/ml$: $62.7{\pm}4.8%$) 3. Hydrogen peroxide$(H_2O_2)$ scavenging activities of WJT water Exts were effective.(3 ${\mu}g/ml:4.7{\pm}0.8$ %, 10 ${\mu}g/ml: $8.2{\pm}1.6$ %, 30 ${\mu}g/ml:19.5{\pm}3.2$ % 100 ${\mu}g/ml$: $24.6{\pm}3.8$ %) 4. Anti oxidative effects against linoleic acid were not effective. 5. The generation of $O_2\;^-$ in S-180 cells were according to the concentration of WJT water Exts, specially effective over 100 ${\mu}g/ml$ concentration. 6. The SOD activities in S-180 cells were in proportion as cytotoxicity against S-180 cells of WJT water Exts. 7. The GPx activities in S-180 cells were in proportion as cytotoxicity against S-180 cells of WJT water Exts(more effective on 300 ${\mu}g/ml$ and 1000 ${\mu}g/ml$ concentration), but the catalase activities in S-180 cells were not effective. 8. The results of activites against multi-drug-resistance(MDR) of WJT were as follows. 1) In water Exts from WJT, cytotoxicity against AML-2/D100 with vincristine($IC_{50:}39.78$ ${\mu}g/ml$) was more effective than without vincristine($IC_{50:}$ 183.58 ${\mu}g/ml$), Cross resistance(CR:3.85) was not effective, and anti-MDR activites(RF) was effective.(RF:3.85) 2) In hexane fraction, cytotoxicity against AML-2/D100 with vincristine ($IC_{50:}130.88$ ${\mu}g/ml$) was more effective than without vincristine ($IC_{50:}293.10$ ${\mu}g/ml$) and anti-MDR activites(RF) was effective.(RF:4.61) 3) In chloroform fraction, the cytotoxicity against AML-2/WT and AML-2/D100 was not effective. 4) In ethyl acetate fraction, cytotoxicity against AML-2/D100 with vincristine($IC_{50:}36.43$ ${\mu}g/ml$) was more effective than without vincristine ($IC_{50:}73.07$ ${\mu}g/ml$), Cross resistance(CR:0.53) was not effective, and anti-MDR activites(RF) was effective.(RF:2) 5) In butanol fraction, the cytotoxicity against AML-2/WT and AML-2/D100 was not effective. 6) In $H_2O$ fraction, the cytotoxicity against AML-2/WT and AML-2/D100 was not effective. Conclusion : These result suggest that WJT has antioxidative effects, anti-tumor effects by apoptosis of free radical$(O_2\;^-)$ activity, and anti-MDR activites(especially hexane and ethyl acetate fraction).

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.402-403
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• 2011

This paper has proposed a $0.13-{\mu}m$ CMOS RF Front-end transmitter for LTE-Advanced systems. The proposed RF Front-end supports a band 7 (from 2500 MHz to 2570 MHz) in E-UTRA of 3GPP. It can provide a maximum output power level of +10 dBm but it's a normal output power level is +0 dBm considering a low PAPR. The post-layout simulation results show that the quadrature up-conversion mixer and a driver amplifier consumes 14 mA and 28 mA from a 1.2 V supply voltage respectively, while providing a output power level of 0 dBm at the input power level of -13 dBm.

• Korean Journal of Medicinal Crop Science
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• v.9 no.1
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• pp.21-25
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• 2001

Major saponins in ginseng were analysed using reverse phase high performance liquid chromatography with binary mobile phase gradient control system instead of normal phase column. The optimum condition were as following : reverse phase column; ${\mu}{\beta}ondapak\;C_{18}$ column (Waters, $3.9mm{\times}300\;mm,\;5{\mu}m$), methyl cyanaide/water binary mobile phase gradient control system, solvent flow rate; 1.5 ml/min, and UV($203{\mu}m$ ) detector. The complete separation of ginsenoside $Rb_1,\;Rb_2,\;Rc,\;Rd,\;Re,\;Rf\;and\;Rg_1$ was achieved within 55 min. The Regression coefficients of the calibration curves for seven ginsenosides were 0.99.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.33-39
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• 1998

The BST (Ba$_{1-x}$ Sr$_{x}$TiO$_{3}$)(50/50) thin film has been grown by RF magnetron reactive sputtering and its characteristics such as crystallization, surface roughness, and electrical properties have been investigated with varying the film thickness. The crystallization and surface roughness of BST thin film are investigated by using XRD and AFM, respectively The BST thin film anealed at 800.deg. C for 2 min has pure perovskite structure and good surface roughness of 16.1.angs.. We estimate that the thickness and dielectric constant of interface layer between BST film and electrode are 3nm and 18.9, respectively, by measuring the capacitance with various film thickness. As the film thickness increases form 80nm to 240nm, the dielectric constant at 10kHz increases from 199 to 265 and the leakage current density at 200kV/cm decreases from 0.682.mu.A/cm$^{2}$ to 0.181 .mu.A/cm$^{2}$. In the case of 240nm-thick BST thin film, the charge storage density and leakage current density at 5V are 50.5fC/.mu.m$^{2}$ and 0.182.mu.A/cm$^{2}$, respectively. The values indicate that the BST thin film is a very useful dielectric material for the DRAM capacitor.or.