• Journal of the Korean Chemical Society
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• v.54 no.4
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• pp.380-386
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• 2010

We have investigated the growth kinetics of Al oxide film by anodization in sulfuric acid solution and the electronic properties of this film using electrochemical impedance spectroscopy. Al oxide film consisted $Al_2O_3$ was grown based on the point defect model and shown the eclctronic properties of n-type semiconductor.

• Corrosion Science and Technology
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• v.12 no.4
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• pp.163-170
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• 2013

In NaCl solutions acidified with $H_2SO_4$, Fe20Cr1.1N alloy showed enhanced pitting corrosion resistance than Fe20Cr alloy. An XPS analysis revealed that the passive film of Fe20Cr1.1N alloy contained higher cationfraction of Cr than that of Fe20Cr alloy, and nitrogen was incorporated into the film. In addition, it was found that the passive film of Fe20Cr1.1N alloy was thinner and had higher oxygen vacancy density than that of Fe20Cr alloy. Based on these observations, it was concluded that the chemical composition was the determining factor for the protectiveness of the passive film of Fe20Cr based alloy in dilute $H_2SO_4$ solution.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.2
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• pp.33-38
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• 2020

In the photoelectrochemical (PEC) water splitting, GaN is one of the most promising photoanode materials due to high stability in electrolytes and adjustable energy band position. However, the application of GaN is limited because of low efficiency. To improve solar to hydrogen conversion efficiency, we introduce a Cobalt Phosphate (Co-pi) catalyst by photo-electrodeposition. The Co-pi deposition GaN were characterized by SEM, EDS, and XPS, respectively, which illustrated that Co-pi was successfully decorated on the surface of GaN. PEC measurement showed that photocurrent density of GaN was 0.5 mA/㎠ and that of Co-pi deposited GaN was 0.75 mA/㎠. Impedance and Mott-Schottky measurements were performed, and as a result of the measurement, polarization resistance (R_p) and increased donor concentration (N_D) values decreased from 50.35 Ω to 34.16 Ω were confirmed. As a result of analyzing the surface components before and after the water decomposition, it was confirmed that the Co-pi catalyst is stable because Co-pi remains even after the water decomposition. Through this, it was confirmed that Co-pi is effective as a catalyst for improving GaN efficiency, and when applied as a catalyst to other photoelectrodes, it is considered that the efficiency of the PEC system can be improved.

• Journal of the Korean Ceramic Society
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• v.55 no.3
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• pp.244-260
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• 2018

Issues in the electrical characterization of semiconducting photoanodes in a photoelectrochemical (PEC) cell, such as the cell geometry dependence, scan rate dependence in DC measurements, and the frequency dependence in AC measurements, are addressed, using the example of a $TiO_2$ photoanode. Contrary to conventional constant phase element (CPE) modeling, the capacitive behavior associated with Mott-Schottky (MS) response was successfully modeled by a Havriliak-Negami (HN) capacitance function-which allowed the determination of frequency-independent Schottky capacitance parameters to be explained by a trapping mechanism. Additional polarization can be successfully described by the parallel connection of a Bisquert transmission line (TL) model for the diffusion-recombination process in the nanostructured $TiO_2$ electrode. Instead of shunt CPEs generally employed for the non-ideal TL feature, TL models with ideal shunt capacitors can describe the experimental data in the presence of an infinite-length Warburg element as internal interfacial impedance - a characteristic suggested to be a generic feature of many electrochemical cells. Fully parametrized impedance spectra finally allow in-depth physicochemical interpretations.

• Journal of the Korean Chemical Society
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• v.37 no.6
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• pp.549-554
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• 1993

The titanium oxide thin film was prepared by air oxidation and water vapor oxidation. The photo-electrochemical properties of the electrode was studied in 1M NaOH solution. Titanium dioxide electrodes prepared at higher temperatures were found to have slightly more negative flat band potentials and slightly higher donor densities than their low temperature counterparts. The value of flat band potential ($V_{fb}$) was obtained to be -0.95 ∼ -1.1 V by the measurement of photocurrent and Motte-Schottky plots. The photocurrent of visible region was measured in terms of single crystal filter which entirely blocks the UV radiation. The photo-response of electrodes appeared good with the measument by direct current, when the slit of great resolution was used.

• Bulletin of the Korean Chemical Society
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• v.35 no.11
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• pp.3261-3266
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• 2014

A pellet of polycrystalline $CuGaO_2$ with a delafossite structure was prepared from $Ga_2O_3$ and CuO by high-temperature solid-state synthesis. The $CuGaO_2$ pellet was a p-type semiconductor for which the electrical conductivity, carrier density, carrier mobility and Seebeck coefficient were $5.34{\times}10^{-2}{\Omega}^{-1}cm^{-1}$, $3.5{\times}10^{20}cm^{-3}$, $9.5{\times}10^{-4}cm^2V^{-1}s^{-1}$ at room temperature, and $+360{\mu}V/K$, respectively. It also exhibited two optical transitions at about 2.7 and 3.6 eV. The photoelectrochemical properties of the $CuGaO_2$ pellet electrode were investigated in aqueous electrolyte solutions. The flat-band potential of this electrode, determined using a Mott-Schottky plot, was +0.18 V vs SCE at pH 4.8 and followed the Nernst equation with respect to pH. Under UV light illumination, a cathodic photocurrent developed, and molecular hydrogen simultaneously evolved on the surface of the electrode due to the direct reduction of water without deposition of any metal catalyst.

• Transactions of the Korean hydrogen and new energy society
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• v.1 no.1
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• pp.48-54
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• 1989

Semiconductive property of the passivating $TiO_2$ film was investigated by measuring the impedance of passivated titanium electrode in a 0.1 N NaOH solution. The passive film was prepared galvanostatically with $10mA/cm^2$ at formation potential of 50 V in a 1 N $H_2SO_4$ solution. The impedance measurement was conducted by superimposing an ac voltage of 5 m V amplitude with the frequency ranging from 5 to 10000 Hz on a dc bias (applied potential). The donor distribution in the film was depicted from the analysis of the non-linear slope of Mott-Schottky plot. The region with nearly constant concentration of donors near the electrolyte/film interface amounts at about 60 percent of the total film thickness and donor concentration increases largely with distance from the surface in an inner region near the film/metal interface. In a region of the film/metal interface the donor concentration showed a frequency dependence greater than in a region of the electrolyte/film interface. The result of donor concentration against frequency suggests a transition from crystalline to amorphous state with distance from the electrolyte/film interface in the passivating $TiO_2$ films. This is also confirmed by the ac conductivity measurement.

• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1262-1268
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• 1995

Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively.

• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1397-1400
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• 2013

The influence of electron beam irradiation on photocatalytic activity of $TiO_2$ thin films was investigated. $TiO_2$ thin films were prepared by anodization of Ti foil, and they were then subjected to an 1 MeV electron beam. Changes in physical properties and photocatalytic activity of $TiO_2$ before and after e-beam irradiation were investigated. The crystallinity of the synthesized materials was investigated by X-ray diffraction, and the oxidation states of both titanium and oxygen were determined by X-ray photoelectron spectroscopy (XPS). The density of donor ($N_d$) and flat band potential ($E_{fb}$) were investigated by Mott-Schottky analysis, and photocurrent was measured under a 1kW Xenon lamp illumination. After e-beam irradiation, significant change of Ti oxidation state was observed. $Ti^{3+}/Ti^{4+}$ ratio increased mainly due to the surface reduction by electron, and photocurrent was observed to increase with e-beam irradiation.

• Journal of the Korean institute of surface engineering
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• v.51 no.6
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• pp.421-429
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• 2018

In this study, various electrochemical experiments were carried out to compare the corrosion characteristics of AA5052-O, AA5083-H321 and AA6061-T6 in seawater. The electrochemical impedance and potentiostatic polarization measurements showed that the corrosion resistance is decreased in the order of AA5052-O, AA5083-H321 and AA6061-T6, with AA5052-O being the highest resistant. This is closely associated with the property of passive film formed on three tested Al alloys. Based on the slope of Mott-Schottky plots of an n-type semiconductor, the density of oxygen vacancies in the passive film formed on the alloys was determined. This revealed that the defect density is increased in the order of AA5052-O, AA5083-H321 and AA6061-T6. Considering these facts, it is implied that the addition of Mg, Si, and Cu to the Al alloys can degrade the passivity, which is characterized by a passive film structure containing more defect sites, contributing to the decrease in corrosion resistance in seawater.