• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.85-88
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• 2004

Mono-crystalline silicon(mono-Si) is both abundant in our environment and an excellent material for Si device applications. However, single crystalline silicon solar cell has been considered to be expensive for terrestrial applications. For that reason, the last few years have seen very rapid progress in the research and development activities of layer transfer(LT) processes. Thin film Si layers which can be detached from a reusable mono-Si wafers served as a substrate for epitaxial growth. The epitaxial films have a very high efficiency potential. LT technology is a promising approach to reduce fabrication cost with high efficiency at large scale since expensive Si substrate can be recycled. Low quality Si can be used as a substrate. Therefore, we propose one of the major technologies on fabricating thin film Si substrate using a LT. In this paper, we study the LT method using the electrochemical etching(ECE) and solid edge.

• 한국결정성장학회지
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• 제24권2호
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• pp.47-53
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• 2014

태양전지용 규소에는 단결정, 다결정, mono-like의 세 가지 재료가 사용 중에 있다. 첫 번째로, 단결정은 수율향상의 과제에 집중되고 있으며, 이것은 고액 계면의 형상이 주요 요인으로 알려지고 있다. 이에 대한 연구가 전산모사 등으로 집중되고 있다. 또한 결정과 도가니의 회전 속도가 고액 계면의 형상에 영향을 미치는 것이 확인 되었다. 다결정의 경우에는 결정립계의 역할이 매우 중요하므로 이에 대한 연구가 진행되는데, 이들을 특히 전기적으로 비활성적인 쌍정 입계로 전환하는 연구가 진행되고 있다. 성장 조건을 변경시켜 쌍정 입계로 바꾸어서 재료의 전기적 성질을 향상시키는 결과를 확인하였다. 또한 성장 공정에서 발생될 수 있는 오염을 줄이기 위한 노력은 상부의 Ar 가스의 흐름을 상향 조절하여 불순물의 용입을 줄임이 확인되었다. 다음으로 mono-like인 경우에는 측면으로부터 성장 되어 들어오는 다결정이 단결정의 분율을 저하 시키는 주요 요인이 되고 있다. 이에 대한 해결책으로 하부의 냉각 속도를 높이고 상부와 측면에 단열재를 보강하는 방안이 제시되고 있고, 하부에 놓는 seed의 orientation을 조절하여 측면으로부터 성장 되어 들어오는 다결정을 억제하는 방안이 효과가 있음이 확인 되고 있다.

• 반도체디스플레이기술학회지
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• 제12권3호
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• pp.41-46
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• 2013

Efficient and inexpensive solar cells are necessary for photo-voltaic to be widely adopted for mainstream electricity generation. For this to occur, the recombination losses of charge carriers (i.e. electrons or holes) must be minimized using a surface passivation technique suitable for manufacturing. Recently it has been shown that aluminum oxide thin films are negatively charged dielectrics that provide excellent surface passivation of silicon solar cells to attract positive-charged holes. Especially aluminum oxide thin film is a quite suitable passivation on the rear side of p-type silicon solar cells. This paper, it demonstrate the interfacial microstructure and electrical properties of mono-crystalline silicon surface passivated by $Al_2O_3$ films during firing process as applied for screen-printed solar cells. The first task is a comparison of the interfacial microstructure and chemical bonds of PECVD $Al_2O_3$ and of PEALD $Al_2O_3$ films for the surface passivation of silicon. The second is to study electrical properties of double-stacked layers of PEALD $Al_2O_3$/PECVD SiN films after firing process in the temperature range of $650{\sim}950^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.654-658
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• 2011

This paper was investigated the electrical properties for optimal operating conditions of monocrystalline silicon solar cell. The output of electricity for monocrystalline solar cell was investigated according to the distances between solar cell and halogen lamp and to the resistances by the variable resistor.

• 반도체디스플레이기술학회지
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• 제12권3호
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• pp.47-51
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• 2013

Current research trends of solar cells has focused on the high conversion efficiency and low-cost production technology. Passivation technology that can be easily adapted to mass production. Therefore, this study conducted experiments with aim of the following two methods for the fabrication of high-efficiency crystalline silicon solar cells. In the first task, an attempt is formation of local Al-BSF to a number of locally doped dots to increase the conversion efficiency of solar cells to reduce the loss of $V_{oc}$ overcome. The second major task, rear surface apply in $Al_2O_3/SiN_x$ stack layer, $Al_2O_3$ prominent negative fixed charge characteristics. As the result of task, Local Al-BSF and $Al_2O_3/SiN_x$ stack layer applied to the p-type single crystalline silicon solar cells, the average $V_{oc}$ of 644mV, $I_{sc}$ of 918mV and conversion efficiency of 18.70% were obtained.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.12-17
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• 2019

In this study, the Ag nano-dots structure and silicon nitride film were applied to the textured wafer surface to improve the light trapping effect of mono-crystalline silicon solar cell. Ag nano-dots structure was formed by performing a heat treatment for 30 minutes at 650℃ after the deposition of 10nm Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The silicon nitride film was deposited by a Hot-wire chemical vapor deposition. The effect of light trapping was compared and analyzed through light reflectance measurements. Experimental results showed that the reflectivity increased by 0.5 ~ 1% under all nitride thickness conditions when Ag nano-dots structure was formed before nitride film deposition. In addition, when the Ag nano-dots structure is formed after deposition of the silicon nitride film, the reflectance is increased in the nitride film condition of 70 nm or more. When the HF treatment was performed for 60 seconds to improve the Ag nano-dot structure, the overall reflectance was improved, and the reflectance was 0.15% lower than that of the silicon nitride film-only sample at 90 nm silicon nitride film condition.

• 신재생에너지
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• 제10권3호
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• pp.39-46
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• 2014

The performances of three different types of photovoltaic (PV) module technologies namely, copper-indium-diselenide (CIGS), mono-crystalline silicon (mo-Si) and amorphous silicon (a-Si) have been comparatively studied in the grid-connected system for more than a year under the tropical monsoon climate of Thailand. The yields, performance ratios and system efficiencies for the respective PV module technologies have been calculated and a comparison is presented here. The performance ratios of the initial operation year for CIGS showed highest among the compared technologies under Thailand climate conditions by marking 97.0% while 89.6% for a-Si and 81.5% for mo-Si. Although mo-Si has shown highest efficiencies all over the period, under the testing conditions, the operating efficiency of mo-Si was down-graded from its reference value mainly due to high operating temperature and the efficiency of the tested CIGS module was also found as high as that of mo-Si in the study. Accordingly, outdoor assessment shows that CIGS modules have demonstrated high performance in terms of yields and performance ratios in Thailand climate conditions.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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• pp.243-247
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• 2012

The paper focuses on an anti-reflection (AR) coating deposited by PECVD in silicon solar cell fabrication. AR coating is effective to reduce the reflection of the light on the silicon wafer surface and then increase substantially the solar cell conversion efficiency. In this work, we carried out experiments to optimize double AR coating layer with silicon nitride and silicon oxide for the silicon solar cells. The p-type mono crystalline silicon wafers with $156{\times}156mm^2$ area, 0.5-3 ${\Omega}{\cdot}cm$ resistivity, and $200{\mu}m$ thickness were used. All wafers were textured in KOH solution, doped with $POCl_3$ and removed PSG before ARC process. The optimized thickness of each ARC layer was calculated by theoretical equation. For the double layer of AR coating, silicon nitride layer was deposited first using $SiH_4$ and $NH_3$, and then silicon oxide using $SiH_4$ and $N_2O$. As a result, reflectance of $SiO_2/SiN_x$ layer was lower than single $SiN_x$ and then it resulted in increase of short-circuit current and conversion efficiency. It indicates that the double AR coating layer is necessary to obtain the high efficiency solar cell with PECVD already used in commercial line.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.662-666
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• 1989

Pure mono Silane(Purity: 99.99%) was used as a thin film source and [$SiH_4$ + $H_2$ (5%)] + [$PH_3$ + $H_2$(0.05%)] mixed dilute gas was used for p-n junction diode. The substrate was P-type silicon wafer (p=$3{\Omega}$ cm) with the direction (100). The crystalline qualities of deposited thin film were investigated by the X-ray diffraction, RHEED and TED patterns and the voltampere characteristics of p-n junction diode was identified by I-V curve.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.249-249
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• 2010

We investigated novel surface treatment and its impact on silicon photovoltaic cells. Using 2-step etching methods, we have changed the nanostructure on pyramid surface so that less light is reflected. This work proposes an improved texturing technique of mono crystalline silicon surface for solar cells with sub-nanotexturing process. The nanotextured silicon surface exhibits a lower average reflectivity (~4%) in the wavelength range of 300-1100nm without antireflection coating layer. It is worth mentioning that the surface of pyramids may also affect the surface reflectance and carrier lifetime. In one word, we believe nanotextruing is a promising guide for texturization of monocrystalline silicon surface.