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A Study on Application of Ag Nano-Dots and Silicon Nitride Film for Improving the Light Trapping in Mono-crystalline Silicon Solar Cell  

Choi, Jeong-Ho (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education)
Roh, Si-Cheol (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education)
Seo, Hwa-Il (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education)
Publication Information
Journal of the Semiconductor & Display Technology / v.18, no.4, 2019 , pp. 12-17 More about this Journal
Abstract
In this study, the Ag nano-dots structure and silicon nitride film were applied to the textured wafer surface to improve the light trapping effect of mono-crystalline silicon solar cell. Ag nano-dots structure was formed by performing a heat treatment for 30 minutes at 650℃ after the deposition of 10nm Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The silicon nitride film was deposited by a Hot-wire chemical vapor deposition. The effect of light trapping was compared and analyzed through light reflectance measurements. Experimental results showed that the reflectivity increased by 0.5 ~ 1% under all nitride thickness conditions when Ag nano-dots structure was formed before nitride film deposition. In addition, when the Ag nano-dots structure is formed after deposition of the silicon nitride film, the reflectance is increased in the nitride film condition of 70 nm or more. When the HF treatment was performed for 60 seconds to improve the Ag nano-dot structure, the overall reflectance was improved, and the reflectance was 0.15% lower than that of the silicon nitride film-only sample at 90 nm silicon nitride film condition.
Keywords
Light trapping; Ag nano-dots; Silicon nitride film; HF treatment; Reflectance;
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Times Cited By KSCI : 1  (Citation Analysis)
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