• 한국진공학회지
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• 제16권4호
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• pp.298-304
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• 2007

rf 플라즈마 소스가 장착된 분자선 에피택시 장비를 이용하여 Si(111) 기판위에 GaN 나노로드를 성장할 때, N2의 흐름양을 조절하여 나노로드의 구조 및 광학적인 특성을 조사하였다. $N_2$의 양이 1.1sccm에서 2.0sccm으로 변할 때 육각형 모양의 나노로드가 성장되었으며, 평균 직경이 80nm에서 190nm 까지 변화 하였다. 그러나 나노로드와 compact한 영역의 길이 (두께)비는 $N_2$의 양이 1.7sccm 까지는 증가하지만 그 이상에서는 변화지 않았다. PL 측정으로부터, $N_2$의 양이 적은 나노로드에서 자유 엑시톤의 피이크가 더욱 뚜렷하게 관측되었고, 모든 PL 피이크의 위치는 직경이 적을수록 나노로드의 크기 효과에 의해서 고에너지 쪽으로 이동하였다. $N_2$의 양이 1.7sccm 인 시료에서는 온도에 따른 PL의 피이크의 위치가 온도가 증가함에 따라서 "S-형"의 거동을 나타내었다.

• 한국재료학회지
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• 제9권9호
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• pp.878-882
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• 1999

분자선증착법으로 (0001) 사파이어 기판 위에 $Al_xGa_1-_xN$ 에피층을 AlN 몰비를 변화시키면서 성장시켰다. AlN 몰비는 0.16에서 0.76까지 변화시켰으며 X선의 회절 실험과 Rutherford backscattering spectroscopy 방법을 이용하여 AlN 몰비를 결정하였다. $Al_xGa_1-_xN$ 에피층의 깊이 방향의 조성 변화를 관찰하였으며 스퍼터 시간에 대해 각 원소가 일정한 원자 농도를 가짐을 알 수 있었다. AlN 몰비의 증가에 따른 표면 특성의 변화를 관찰하기 위하여 atomic force microscopy 측정을 수행하였다. 표면에서의 입자 모양이 AlN 몰비가 변화함에 따라 원형에서 침상형태로 변화함을 알 수 있었다. 표면 입자에 대한 root mean square 값과 average roughness 값을 구하였으며 AlN 몰비를 바꿈에 따라 나타나는 변화를 관찰하였다.

• 한국자기학회지
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• 제19권4호
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• pp.126-132
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• 2009

Molecular-Beam Epitaxy 방법으로 합성된 MnAs 박막의 물리적 특성을 기판의 종류와 증착 온도에 따라 조사하였으며 더불어 이들 시료의 증착 후 열처리 효과를 조사하였다. 증착 온도가 $600^{\circ}C$일 경우에는 기판의 종류에 관계없이 type-B의 결정 방향성을 보였으나 $200^{\circ}C$ 이하에서 합성한 시료에 대하여는 type-A로 합성되었다. $600^{\circ}C$에서 GaAs(001) 기판에 성장시킨 시료에서는 자기화 용이축 내에서도 특히 한쪽 방향으로 자화가 되어 있음을 확인하였다. 강자성을 보이지 않던 $120^{\circ}C$에서 증착한 MnAs/Si(001)와 실온에서 강자성과 상자성이 공존하였던 $200^{\circ}C$에서 증착한 MnAs/GaAs(001) 시료의 경우 $600^{\circ}C$에서 열처리 하였을때 자기적 특성이 크게 향상되었다.

• 한국진공학회지
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• 제7권4호
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• pp.334-340
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• 1998

Molecular Beam Epitaxy(MBE)법으로 성장된 $In_xGa_{1-x}As/GaAs$ 에피층에 대해 photoreflectance(PR)실험을 통해 특성을 조사하였다. PR 측정결과 성장된 InxGa1-xAs 에피 층의 띠간격 에너지(E0)신호가 시료의 변형(strain)에 의해 heavy-hole(E0(HH))과 light-hole(E0(LH))로 분리되어 관측되었다. 에피층의 조성과 변형은 각각 시료에서의 Eo(HH) 및 Eo(HH)와 Eo(LH)신호의 에너지 차이를 이용하여 구하였다. 또 160K이하의 온 도에서는 Eo(LH)의 신호가 사라짐을 볼 수 있었다. Franz-Keldysh oscillation(FKO) 피크 로부터 계산되어진 InGaAs/GaAs 계면전장(E)은 In조성의 증가에 따라 $0.75{\times}10^5$V/cm에서 $2.66{\times}10^5$V/cm로 증가하였다. In조성이 x=0.09인 시료에 대한 PR신호의 온도의존성 실험에 서 Varshni계수와 Bose-Einstein계수들을 각각 구하였다.

• E2M - 전기 전자와 첨단 소재
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• 제10권7호
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• pp.692-699
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• 1997

The silicon doped $Al_{0.33}$G $a_{0.67}$As were grown by molecular beam epitaxy. The electroreflectance(ER) spectra of Schottky barrier Au/n-Al/suu x/G $a_{1-x}$ As have been measured at various modulation voltage( $V_{ac}$ ) and dc bias voltage( $V_{bias}$). From the observed Franz-Keldysh oscillations(FKO) peak, the band gap energy of the $Al_{x}$G $a_{1-x}$ As is 1.91 eV which corresponds to an Al composition of 33%. The internal electric field( $E_{i}$)of this sample is 2.96$\times$10$^{5}$ V/cm. As the modulation voltage( $V_{ac}$ ) is changed, the line shape of ER signal does not change but its amplitude varies linearly. The amplitude as a function of modulation voltage has saturated at 0.8 V. The internal electric field has decreased from 6.47$\times$10$^{5}$ V/cm to 2.00$\times$10$^{5}$ V/cm as the dc bias voltage( $V_{bias}$) increases from -3.5 V to +0.8 V. The values of built-in voltage( $V_{bi}$ ) and carrier concentration(N) determined from the plot of $V_{bias}$ from the plot of $V_{bias}$ versus $E_{i}$$^{2}$ are 0.855 V and 3.83$\times$10$^{17}$ c $m^{-3}$ , respectively.ively.y.y.y.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.74-77
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• 2004

[ $HfO_2$ ] dielectric layers were grown on the p-type Si(100) substrate by metalorganic molecular beam epitaxy(MOMBE). Hafnium $t-butoxide[Hf(O{\cdot}t-C_4H_9)_4]$ was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and high-resolution transmission electron measurement(HR-TEM). The properties of the $HfO_2$ layers were evaluated by X-ray diffraction(XRD), high frequency capacitance-voltage measurement(HF C-V), current-voltage measurement(I-V), and atomic force measurement(AFM). HF C-V measurements have shown that $HfO_2$ layer grown by MOMBE has a high dielectric constant(k=19-21). The properties of $HfO_2$ films are affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows. In this paper, we examined the relationship between the $O_2/Ar$ gas ratio and the electrical properties of $HfO_2$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.203.1-203.1
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• 2013

Zinc oxide (ZnO) nanocrystalline thin films on various growth temperatures for active layer and different buffer layer thickness were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si substrates. The ZnO active layer were grown with various growth temperature from 500 to $800^{\circ}C$ and the ZnO buffer layer were grown for different time from 5 to 40 minutes. To investigate the structural and optical properties of the ZnO thin films, scanning electron microscope (SEM), X-ray diffractometer (XRD), and photoluminescence (PL) spectroscopy were used, respectively. In the SEM images, the ZnO thin films have high densification of grains and good roughness and uniformity at $800^{\circ}C$ for active layer growth temperature and 20 minutes for buffer layer growth time, respectively. The PL spectra of ZnO buffer layers and active layers display sharp near band edge (NBE) emissions in UV range and broad deep level emissions (DLE) in visible range. The intensity of NBE peaks for the ZnO thin films significantly increase with increase in the active layer growth temperature. In addition, the NBE peak at 20 minutes for buffer layer growth time has the largest emission intensity and the intensity of DLE peaks decrease with increase in the growth time.

• Applied Science and Convergence Technology
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• 제27권5호
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• pp.95-99
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• 2018

We discuss the structural and optical characteristics of GaN nanowires (NWs) grown on Si(111) substrates by a plasma-assisted molecular-beam epitaxy. The GaN NWs with high crystal quality were formed by adopting a new growth approach, so called Ga pre-deposition (GaPD) method. In the GaPD, only Ga was supplied without nitrogen flux on a SiN/Si surface, resulting in the formation of Ga droplets. The Ga droplets were used as initial nucleation sites for the growth of GaN NWs. The GaN NWs with the average heights of 60.10 to 214.62 nm obtained by increasing growth time. The hexagonal-shaped top surfaces and facets were observed from the field-emission electron microscope images of GaN NWs, indicating that the NWs have the wurtzite (WZ) crystal structure. Strong peaks of GaN (0002) corresponding to WZ structures were also observed from double crystal x-ray diffraction rocking curves of the NW samples. At room temperature, free-exciton emissions were observed from GaN NWs with narrow linewidth broadenings, indicating to the formation of high-quality NWs.

• 한국재료학회지
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• 제29권10호
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• pp.579-585
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• 2019

In this study, we investigate the effect of Al/N source ratios and growth rates on the growth and structural properties of AlN films on c-plane sapphires by plasma-assisted molecular beam epitaxy. Both growth rates and Al/N ratios affect crystal qualities of AlN films. The full width at half maximum (FWHM) values of ($10{\bar{1}}5$) X-ray rocking curves (XRCs) change from 0.22 to $0.31^{\circ}$ with changing of the Al/N ratios, but the curves of (0002) XRCs change from 0.04 to $0.45^{\circ}$ with changing of the Al/N ratios. This means that structural deformation due to dislocations is slightly affected by the Al/N ratio in the ($10{\bar{1}}5$) XRCs but affected strongly for the (0002) XRCs. From the viewpoint of growth rate, the AlN films with high growth rate (HGR) show better crystal quality than the low growth rate (LGR) films overall, as shown by the FWHM values of the (0002) and ($10{\bar{1}}5$) XRCs. Based on cross-sectional transmission electron microscope observation, the HGR sample with an Al/N ratio of 3.1 shows more edge dislocations than there are screw and mixed dislocations in the LGR sample with Al/N ratio of 3.5.

• Current Applied Physics
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• 제18권11호
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• pp.1320-1326
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• 2018

High crystalline quality CrN thin films have been grown on $La_{0.67}Sr_{0.33}MnO_3$ (LSMO) templates by molecular beam epitaxy. The structure and magnetic properties of CrN/LSMO heterojunctions are investigated combining with the experiments and the first-principles simulation. The N?el temperature of the CrN/LSMO samples is found to be 281 K and the saturation magnetization of CrN/LSMO increases compared to that of LSMO templates. The magnetic property of CrN/LSMO heterostructures mainly comes from Cr atoms of (001) CrN and Mn atoms of (001) LSMO. The (001) LSMO induces and couples the spin of the CrN sublattice at CrN/LSMO interface.