• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.923-932
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• 2002

A stoichiometric mixture of evaporating materials for CdIn$\_$2/S$\_$4/ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdIn$\_$2/S$\_$4/ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were 630 $\^{C}$ and 420 $\^{C}$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of CdIn$\_$2/S$\_$4/ single crystal thin films measured from Hall effect by van der Pauw method are 9.01$\times$10$\^$16/ cm$\^$-3/ and 219 ㎠/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on CdIn$\_$2/S$\_$4/ single crystal thin films was found to be Eg(T) ＝ 2.7116 eV - (7.74 $\times$ 10$\^$-4/ eV) T$\^$2//(T＋434). After the as-grown CdIn$\_$2/S$\_$4/ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of CdIn$\_$2/S$\_$4/ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of V$\_$cd/, V$\_$s/, Cd$\_$int/ and S$\_$int/ obtained by PL measurements were classified as donors or accepters type. And we concluded that the heat-treatment in the S-atmosphere converted CdIn$\_$2/S$\_$4/ single crystal thin films to an optical p-type. Also, we confirmed that In in CdIn$\_$2/S$\_$4/GaAs did not from the native defects because In in CdIn$\_$2/S$\_$4/ single crystal thin films existed in the form of stable bonds.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.2
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• pp.9-14
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• 2009

The effects of post-annealing temperature on the optical and electrical properties of P-doped ZnO thin films grown on sapphire substrate have been investigated under oxygen ambient. The XRD shows that regardless of the post-annealing temperature, all P-doped ZnO thin films indicate the c-axis orientation. The results of hall effect measurements indicate the P-doped ZnO thin film annealed at $850^{\circ}C$ exhibits p-type behavior with hole concentration of $1.18{\times}1016cm^{-3}$ and hole mobility of $0.96cm^2/Vs$. The low-temperature (10K) Photoluminescence results reveal that the peak related to the neutral-acceptor exciton (A0X), free electrons to neutral acceptor (FA) and donor acceptor pair (DAP) at 3.351ev, 3.283eV and 3.201eV are observed in the films showing p-type behavior with acceptor. The optimization of deposition and post-annealing conditions will certainly make the P-doped ZnO thin films promising materials for the application to the next generation of optical devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.352-356
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal am films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}\;and\;11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively, The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;:\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2(T\;+\;335\;K)$. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $CU_{int}$, and $Se_{int}$, obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2/GaAs$ did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Archives of design research
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• v.14 no.3
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• pp.145-154
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• 2001

These days, the products like Walkman, mobile phone, notebook PC, PDA are moving together with our body, and in the imaginary world like internet, our other self, Avatar is moving in place of our body on the cyber world. These products are related with our human body, and when considering the ones, attached to the human body, and having the meaning of mental combination like these, as the combination of the human and the products, it is necessary to examine these products in approaching them with respect to the combination relation between the human and the products. As a result of examining we can understand that the products, said to combine with the human body, are coming oui steadily. and recently, the inclination on the combination and the movement appears strongly. As this background, there are a breakdown of dichotomy thought, mixed sexual imitation, cyber culture, techno culture. concept of informative nomands, phenomenon which the division of human and machine becomes vague. and the miniaturization of products. imitation of human, phenomenon that the Inclination on the combination with human is more accelerated by networking. These products combine with human body at each wearing type in the various forms. Its functions become multi-layered, and closer to the human body physically. or its communication becomes high·graded and, they have the recombined form through the existing products which the human has And, they communicate each other. have the strong fashionable property, and the characteristics like the imaginary product to imitate the human body and substitute for the human behave.

• Applied Chemistry for Engineering
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• v.1 no.1
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• pp.83-90
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• 1990

The semiconducting $(Pb_1\;_xSn_x)_1$ $_yTe_y$, one of the low - temperature thermoelectric materials, has been prepared and its chemical composition and nonstoichiometry has been analyzed. The content of Pb in the specimens was determined by the complexometric back - titration method with EDTA and Pb(II) standard solutions. Te - content was analyzed with the redox titration method. The electrical conductivity and the thermoelectric power have also been measured by the DC 4 - probe and the heat-pulse technique, respectively. All of the specimens showed a nonstoichiometric behavior in their chemical compositions (Te excess), thus gave rise to a p - type semiconducting property, and the nonstoichoimetry became bigger as the Sn - content increased. The thermoelectric power vs. temperature results have been analyzed upon the basis of the Fermi level vs. temperature profiles in the saturation regime. The specimen of x=0.1 evolved a transition from p - to n - type property at about 670K, which has been explained by the fact that the mobility of electrons is bigger than that of holes in the temperature range of the intrinsic regime.

• Korean Journal of Environment and Ecology
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• v.18 no.1
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• pp.92-102
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• 2004

In this study, landscape changes were examined by periods through the analysis of visual quantity on the landscape components of national road including the mountains, the sky, road pavements, street trees, paddy fields and dry fields, billboard, telegraph pole, building, structure, slope, guard fence, soundproof wall, and median strip etc. For this, subject national road in suburb arreas was selected to grasp its landscape characteristics, and divisional criteria of landscape type of the national road were suggested to look into the trend of landscape changes by periods. Findings of this study are as follows：1.Divisional criteria of landscape type of the national road include location and geometry, structure, land use, perspective, and surrounding buildings of the national road. 2.The highest visual quantity was found in road pavements by periods among landscape components of the national road. It was found that this result has a thread of connection with previous study emphasizing the importance of road geometry as one of landscape components, and road geometry shall be regarded as a visually significant component in analyzing and evaluating landscape of the national road. 3.Most distinguished factors of landscape changes of the national road by periods were median strip(F＝33.296) and street tree(F＝32.881), and then the sky(F＝24.735) and mountain(F＝23.477) showed similar level of statistically significant difference. However, statistically significance difference was not found in buildings and structures. 4.It was shown that natural elements decreased gradually but structural landscape made of artificial elements became the main in construction of the national road. This result implies that although the scenic and ecological soundness is recognized in construction of the national road, it is not out of the limitation of functionalities that is, access and mobility.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.423-423
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• 2013

3~5 족 반도체 물질인 phosphorus 화합물 중 대표적인 InAlP 삼종화합물은 작은 굴절률, 큰 밴드갭, GaAs와 lattice 일치 때문에 큰 주목을 받고 있고, p-type high electron mobility transistors(p-HEMT), laser diodes 등의 고속 전자소자 및 광전 소자에 응용이 가능한 매우 중요한 물질이다. 최적의 소자 응용기술을 위해서는, 정확한 광물성 연구가 수행되어야 하지만 InxAl1-xP 화합물에 대한 유전율 함수 및 전자전이점 등의 연구는 미흡한 실정이다. 이에 본 연구에서는 1.5~6.0 eV 에너지 영역에서 각기 다른 In 조성비를 갖는 InxAl1-xP 화합물의 가유전율 함수 ${\varepsilon}={\varepsilon}_1+i{\varepsilon}_2$와 전자전이점 데이터를 보고한다. GaAs 기판 위에 molecular beam epitaxy (MBE)를 이용하여 InxAl1-xP (x=0.000, 0.186, 0.310, 0.475, 0.715, 0.831, 1.000) 박막을 성장하였고 타원편광분석기를 이용하여 유전율 함수를 측정하였다. 또한 실시간 화학적 에칭을 통하여 시료 표면에 자연산화막을 제거함으로써 순수한 InAlP의 유전율 함수를 측정할 수 있었고, 측정된 유전율 함수를 이차미분하여 In 조성비에 따른 전자전이점을 얻을 수 있었다. 얻어진 전자전이점 값을 이용하여 linear augmented Slater-type orbital method (LASTO) 를 통해 이론적 전자 밴드 구조 계산을 하였고, 이를 바탕으로 $E_0$, $E_1$, $E_2$ 전이점 지역의 여러 전자전이점($E_1$, $E_1+{\Delta}_1$, $E_0'$, $E_0'+{\Delta}_0'$, $E_2$, $E_2'$)의 특성을 정의할 수 있었고, $E_0'$과 $E_2$ 전이점의 에너지 값이 In 조성비가 증가함에 따라 서로 교차함을 발견할 수 있었다. 타원 편광 분석법을 이용한 유전율 함수 및 전자전이점 연구는 InAlP의 광학적 데이터베이스를 확보하는 성과와 더불어 새로운 디바이스 기술 및 광통신 산업에도 유용한 정보가 될 것이다.

• International Journal of Oral Biology
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• v.32 no.4
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• pp.119-125
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• 2007

Dlx3 is a homeodomain protein and is known to play a role in development and differentiation of many tissues. Deletion of four base pairs in DLX3 (NT3198) is causally related to tricho-dento-osseous (TDO) syndrome (OMIM #190320), a genetic disorder manifested by taurodontism, hair abnormalities, and increased bone density in the cranium. The molecular mechanisms that explain the phenotypic characteristics of TDO syndrome have not been clearly determined. In this study, we examined phenotypic characteristics of wild type DLX3(wtDlx3) and 4-BP DEL DLX3 (TDO mtDlx3) in C2C12 cells. To investigate how wtDlx3 and TDO mtDlx3 differentially regulate osteoblastic differentiation, reporter assays were performed by using luciferase reporters containing the promoters of alkaline phosphatase, bone sialoprotein or osteocalcin. Both wtDlx3 and TDO mtDlx3 enhanced significantly all the reporter activities but the effect of mtDlx3 was much weaker than that of wtDlx3. In spite of these differences in reporter activity, electrophoretic mobility shift assay showed that both wtDlx3 and TDO mtDlx3 formed similar amounts of DNA binding complexes with Dlx3 binding consensus sequence or with ALP promoter oligonucleotide bearing the Dlx3 binding core sequence. TDO mtDlx3 exhibits a longer half-life than wtDlx3 and it corresponds to PESTfind analysis result showing that potential PEST sequence was missed in carboxy terminal of TDO mtDlx3. In addition, co-immunoprecipitation demonstrated that TDO mtDlx3 binds to Msx2 more strongly than wtDlx3. Taken together, though TDO mtDlx3 acted as a weaker transcriptional activator than wtDlx3 in osteoblastic cells, there is possibility that during in vivo osteoblast differentiation TDO mtDlx3 may antagonize transcriptional repressor activity of Msx2 more effectively and for longer period than wtDlx3, resulting in enhancement of osteoblast differentiation.

• Journal of the korean academy of Pediatric Dentistry
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• v.30 no.4
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• pp.576-580
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• 2003

A 7-year-old male was refered to Department of Pediatric Dentistry, Wonkwang Dental Hospital for treatment of a traumatic injury to the teeth of the maxillary anterior region of the mouth. His right central incisor presented subluxation and root fracture, the left central incisor had suffered intrusive luxation and root fracture. The initial treatment involved reposition and fixation of the teeth with 0.5mm stainless steel wire and composite resin. The patient was submitted for clinical and radiographic fallow-up. After 4 years, radiographically the right central incisor seemed to be healed by hard tissue union and showed to be indistinct fracture line, intact lamina dura. The left central incisor radiographically was healed by interposition of bone and connective tissue and showed to be distinct horizontal fracture line separating the fragments, and pulp canal obliteration. In clinical examination, the teeth showed a normal response to elective pulp test, percussion and mobility test. Pulp survival after injuries appears to be dependent upon the type of luxation injury, age of patient, stage of root development and degree of dislocation. In this case, the two teeth with incomplete root formation were suffered different type of injury by trauma and has showed different healing aspect.