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Electrical and Optical Properties of phosphorus doped ZnO Thin Films at Various Post-Annealing Temperatures  

Han, Jung-Woo (Dept. of Electronics Engineering, Inha University)
Kang, Seong-Jun (Dept. of Electrical and Semiconductor Engineering, Chonnam National University)
Yoon, Yung-Sup (Dept. of Electronics Engineering, Inha University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.46, no.2, 2009 , pp. 9-14 More about this Journal
Abstract
The effects of post-annealing temperature on the optical and electrical properties of P-doped ZnO thin films grown on sapphire substrate have been investigated under oxygen ambient. The XRD shows that regardless of the post-annealing temperature, all P-doped ZnO thin films indicate the c-axis orientation. The results of hall effect measurements indicate the P-doped ZnO thin film annealed at $850^{\circ}C$ exhibits p-type behavior with hole concentration of $1.18{\times}1016cm^{-3}$ and hole mobility of $0.96cm^2/Vs$. The low-temperature (10K) Photoluminescence results reveal that the peak related to the neutral-acceptor exciton (A0X), free electrons to neutral acceptor (FA) and donor acceptor pair (DAP) at 3.351ev, 3.283eV and 3.201eV are observed in the films showing p-type behavior with acceptor. The optimization of deposition and post-annealing conditions will certainly make the P-doped ZnO thin films promising materials for the application to the next generation of optical devices.
Keywords
P-doped ZnO thin films; Annealing; PLD; Hall-effect; PL;
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