• Economic and Environmental Geology
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• v.26 no.3
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• pp.337-347
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• 1993

Mineralogical and geochemical studies on some pyrophyllite deposits in Milyang area, Kyeongnam Province (Milyang and Sungjin mine) were carried out in order to investigate dispersion patterns of chemical elements in altered volcanic wallrocks, and to interpret genetic environments of the pyrophyllite deposits. Cretaceous andesitic and tuffaceous rocks, and pyrophyllite ore specimens were collected from the dumps and drilling cores. Andesitic wallrocks were grouped as unaltered and altered rocks in the order of pyrophyllitization. Vertical dispersion patterns and relative mobilities of chemical elements in volcanic wallrocks were discussed. Geochemical environment in the Milyang area is characterized by the occurrence of boron minerals such as dumortierite coexisting with pyrophyllite ores, and tourmaline in granitic rocks. Unaltered andesitic rocks are mainly composed of plagioclase, pyroxene and hornblende, and were propylitized and saussuritized. Altered andesitic rocks are bleached and consist of quartz, sericite, pyrophyllite, kaolinite, chlorite and disseminated pyrite. Pyrophyllite ores are mainly composed of quartz, pyrophyllite, dumortierite, dissemianted pyrite and some diaspore. Enrichment of $SiO_2$, $Al_2O_3$, LOI (loss on ignition), As and Cr, and depletion of $K_2O$, $Na_2O$, CaO, MgO and total Fe are characteristic during alteration process. The REE patterns show that the pyrophyllite deposits could be originated from the continental margin volcanics. The $(La/Lu)_{cn}$ ratios of the pyrophyllite ores increase from 4.2~23.2 to 2.67~128.8 owing to strong acidic hydrothermal alteration. Vertical dispersion patterns of $Al_2O_3$, $K_2O$, $Na_2O$, CaO, MgO, $Fe_2O_3$ (total Fe), As, Au, Sb, Cr and Sr in the wallrocks show the location of orebodies. Particularly dispersion patterns of $Al_2O_3$ and Cr indicate the extension of orebodies. Anomalous distribution of Au, As and Sb in wallrocks shows potential for gold occurrence below the pyrophyllite deposits. Judging from the relative mobilities of elements in wallrocks, $Al_2O_3$ could be added from hydrothermal solution, and the silicified rone be formed from the excess of $SiO_2$.

• Journal of the korean academy of Pediatric Dentistry
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• v.38 no.1
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• pp.62-67
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• 2011

Early eruption refers to an accelerated eruption of a tooth beyond the normal eruption period. The clinical findings of an early erupted tooth with little formation of crown and/or root include severe mobility, pain on chewing, hypocalcification of the enamel, and inclination, displacement, and rotation of the tooth. The radiographic findings include underdeveloped root and insufficient bone support. Early eruption of a permanent tooth can cause several complications such as chronic trauma, pain, edema, an increased rate of premolar impaction and tooth displacement and/or rotation. Therefore, when a permanent tooth erupts earlier than its normal eruption period with accompanying symptoms, appropriate treatments should be done as soon as possible. A female patient of age 7 without any systemic disease was referred from a local dental clinic with chief complaint of severe mobilities and pain in both upper first premolars. According to the clinical and radiographic examinations, the permanent teeth erupted earlier with barely formed roots, severe mobilities, edema, and pain. This case is to report the successful accomplishment of root formations and stabilization of teeth after applying intraoral fixed appliances using bands and spurs for 14 months.

• Journal of the Korean Institute of Telematics and Electronics
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• v.5 no.1
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• pp.1-5
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• 1968

GaAs single crystals were grown epitaxially from Ga solution with carrier concentrations in the range and electron mobilities between 7,500 and 9,300$\textrm{cm}^2$/v-sec. at 300$^{\circ}$K, and 50,000 and 95,000 $\textrm{cm}^2$/V-sec. at 77$^{\circ}$K. A comparison of the theoretical and experimental curves for the mobility vs. temperature indicates that the significant scattering mechanisms are ionized impurities and phonons in the temperature range of 77$^{\circ}$K to 439$^{\circ}$K. This indicates that the epitaxial layers do not contain other mobility limiting imperfections to a significant degree. Photoluminescence spectra of the. epitaxial layers did not show any emission due to deep lying imperfection leve1s.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.207-211
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• 1999

$Si/Si_{1-x}Ge_x$ MODFET structures, incorporating linearly-graded buffer layers have been grown by GaS Source Molecular Beam Epitaxy. The growth temperature of the graded layers has not significantly changed the distribution of misfit dislocation. However, the surface undulation and surface defects were increased with increasing growth temperature. In $Si/Si_{1-x}Ge_x$ MODFET structures, the densities of misfit dislocations near the Si-active layers were considerably reduced in comparison with the region of graded layers. The electron mobility of $Si/Si_{1-x}Ge_x$ MODFET structure has increased with lowering the growth temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.17-25
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• 1991

The construction details of VGF apparatus with a DM(direct monitoring) furnace for the growth of low defect crystal and characteristics of GaAs crystal grown by this apparatus are described. The average dislocation densities and EL2 concentration of as-grown undoped GaAs along the different solidified fractions exhibit $4{\times}10^{2}-7{\times}10^{3}cm^{-2}$ and $6{\times}10^{14}-4{\times}10^{15}cm^{-3}$, which are less than those observed for liquid encapsulated Czochralski(LEC) or high-pressure vertical gradient freeze(VGF) crystals. These remarkable reduction of the dislocation densities and EL2 concentrations were explained by the lower temperature gradient ($dT/dx-10^{\circ}/cm$) and slower rates of post - growth cooling ($20^{\circ}C/hr:1240-1000^{\circ}C,\;30^{\circ}C/hr:1000-700^{\circ}C$). Also, The Hall mobilities, carrier concentrations show uniform distribution throughtout 80% of the ingot length.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.305-308
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• 2004

We present a novel process for the ultra low temperature (<150$^{\circ}C$) polycrystalline silicon (ULTPS) TFT for the flexible display applications on the plastic substrate. The sequential lateral solidification (SLS) was used for the crystallization of the amorphous silicon film deposited by rf magnetron sputtering, resulting in high mobility polycrystalline silicon (poly-Si) film. The gate dielectric was composed of thin $SiO_2$ formed by plasma oxidation and $Al_2O_3$ deposited by plasma enhanced atomic layer deposition. The breakdown field of gate dielectric on poly-Si film showed above 6.3 MV/cm. Laser activation reduced the source/drain resistance below 200 ${\Omega}$/ㅁ for n layer and 400 ${\Omega}$/ㅁ for p layer. The fabricated ULTPS TFT shows excellent performance with mobilities of 114 $cm^2$/Vs (nMOS) and 42 $cm^2$/Vs (pMOS), on/off current ratios of 4.20${\times}10^6$ (nMOS) and 5.7${\times}10^5$ (PMOS).

• Environmental Mutagens and Carcinogens
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• v.18 no.2
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• pp.83-88
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• 1998

To detect the mutation in a given sequence, there are variety of methods developed by use of the gel electrophoresis. One of the methods, TGGE (Temperature Gradient Gel Electrophoresis), is a popular technique because it can detect mutations in DNA fragment with ease and at low cost. This study used 200 bp BamHI-digested DNA fragment containing the human $\varepsilon$-globin promoter which was mutated[$\varepsilon$ F1*(-141), GATA- I*(-163), and GATA-1* & $\varepsilon$F1]. This BamHI-digested DNA fragment was directly used to detect the mutated DNA fragment on 50% denaturant gel with temperature gradient of 45$^{\circ}C$ through $53^{\circ}C$. In agreement with the theoretical result of MELTSCAN program (Brossette and Wallet, 1994) the mobilities of mutated DNA fragments were shown to be nearly distinguished on the temperature gradient gel. In contrast to the above result the heteroduplex analysis under the temperature gradient condition was shown to detect the mutated DNA fragments through the heteroduplex formation between strands of mutated DNA and wild-type DNA.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.93-94
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• 2009

The influences of $O_2$ partial pressure on electrical properties of transparent semiconducting indium zinc tin oxide thin films deposited at room temperature by magnetron sputtering have been investigated. The experimental results show that by varying the $O_2$ partial pressure during deposition, electron mobilities of IZTO thin film can be controlled between 7 and $25\;cm^2/Vs$. For conducting films, the carrier concentration and resistivity are ${\sim}\;10^{21}\;cm^{-3}$ and ${\sim}\;10^{-4}\;{\Omega}\;cm$, respectively. Concerning semiconducting films, under 12% $O_2$ partial fraction, the electron concentration is $10^{18}\;cm^{-3}$, showing the promising candidate for the application of transparent thin film transistors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.199-200
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• 2009

This paper describes the electrical properties of polycrystalline (poly) 3C-SiC thin films with different nitrogen doping concentrations. The in-situ-doped poly 3C-SiC thin films were deposited by using atmospheric-pressure chemical vapor deposition (APCVD) at $1200^{\circ}C$ with hexamethyldisilane (HMDS: $Si_2$ $(CH_3)_6)$ as a single precursor and 0 ~ 100 sccm of $N_2$ as the dopant source gas. The peaks of the SiC (111) and the Si-C bonding were observed for the poly 3C-SiC thin films grown on $SiO_2/Si$ substrates by using X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR) analyses, respectively. The resistivity of the poly 3C-SiC thin films decreased from $8.35\;{\Omega}{\cdot}cm$ for $N_2$ of 0 sccm to $0.014\;{\Omega}{\cdot}cm$ with $N_2$ of 100 sccm. The carrier concentration of the poly 3C-SiC films increased with doping from $3.0819\;{\times}\;10^{17}$ to $2.2994\;{\times}\;10^{19}\;cm^{-3}$, and their electronic mobilities increased from 2.433 to $29.299\;cm^2/V{\cdot}S$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.1007-1013
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• 1998

In this paper, the dielectric properties of fabricated Polyvinylidene fluoride(PVDF, $PVF_2$) thin film with substrate temperature from 30 to at vapor deposition. The dielectric properties of PVDF thin film had been studied in the frequency range from 10Hz to 4MHz at measuring temperature between 20 and $100^{/circ}C$. The anomalous increasing in dielectric constant and dielectric loss at low frequencies and high temperature was described for PVDF thin film containing ion impurities. In particularly, ion mobility of fabricated PVDF thin film at substrate temperature at $30^{/circ}C$ decrease from $2\times10^{-5}\;to\;3.07$\times10^{-7}cm^2/V.s$ On the other hand, ion density increase abruptly from 1.49\times$$10^{13}$ to $1.5\times$10^{16}$cm^{-3}$ In spite of decreasing of ion mobility, dielectric constants and dielectric loss for PVDF thin film increase rapidly with decreasing frequency and high temperature. It was concluded that the dielectric constants and dielectric loss was related to ion density than to ion mobility at low frequency and high temperatures.