• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.683-690
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• 1996

In this study, the diffusion barrier properties of $1000 \AA$ thick molybdenum compounds (Mo, Mo-N, $MoSi_2$, Mo-Si-N) were investigated using sheet resistance measurements, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM), and Rutherford backscattering spectrometry (RBS). Each barrier material was deposited by the dc magnetron sputtering, and annealed at 300-$800^{\circ}C$ for 30min in vacuum. Mo and $MoSi_2$ barrier were failed at low temperature due to Cu diffusion through grain bound-aries and defects of Mo thin film and the reaction of Cu with Si within $MoSi_2$ respectively. A failure temperature could be raised to $650^{\circ}C$-30min in the Mo barrier system and to $700^{\circ}C$-30min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the N, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It was found that Mo-Si-N is more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetration preventing Cu reaction with the substrate for 30min at a temperature higher than $650^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.1
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• pp.19-22
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• 1999

N-doped and low-hydrogenated DLC thin films were coated on the Mo-tip FEAs in order to improve the field emission performance and their electrical properties were evaluated. The fabricated devices showed improved field emission performance in terms of turn-on voltage, emission current and current fluctuation. This result might be caused both by the shift of Fermi level toward conduction band by N-doping and by the inherent stability of DLC material. Furthermore, the transconductance of the DLC-coated Mo-tip FEA and electrical conductivity and optical band-gap of the deposited DLC films were investigated.

• Proceedings of the Korean Magnestics Society Conference
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• 1993.11a
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• pp.88-88
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• 1993

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.468-472
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• 2011

Conductive $SrMoO_3$ thin films were fabricated by RF magnetron sputtering with the powder-type sputtering target, and annealed for crystallization. When RTP (rapid thermal processing) in vacuum was applied, the fabricated thin films showed the mixed phases of $SrMoO_3$ and $SrMoO_4$, but $SrMoO_3$ phase could be promoted by the lowering of the working pressure during deposition. In order to eliminate $O_2$ gas during deposition and annealing, further lowering of the working pressure and furnace annealing in hydrogen atmosphere were tried. With the optimization of the deposition and annealing conditions, the thin film with nearly single-phase of $SrMoO_3$ was obtained, and it showed good electrical conduction properties with a low resistivity of $2.5{\times}10^{-3}{\Omega}{\cdot}cm$ at room temperature.

• Korean Journal of Materials Research
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• v.11 no.11
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• pp.991-996
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• 2001

This study is the manufacture of solid lubricant oilless bearing using sintered parts. PTFE was as organic solid lubricant and $MoS_2$ as inorganic solid lubricant, and its characteristics were studied. Thickness of lubricant was suited 25~$100\mu\textrm{m}$ for lubricant characteristics. Curring temperature of MoS_2$ film was 12$0^{\circ}C$, 2 hours and that of PTFE film was $260^{\circ}C$, 20 minutes. The solid weight and solid volume of $MoS_2$ film was 51.7% and 27.4%, and that of PTFE was 44.9% and 24.3%. Chemical resistant of PTFE solid lubricant oilless bearing was excellent as salt test was 520hours, and usable temperature range was $-200~+280 ^{\circ}C$. Conduction of electricity can be increase by addition of graphite or $$\alpha$- PbO_2$. The electric conductivity was 100~180$\Omega$.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.523-525
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• 2002

The poly-Si thin film can be used in high mobility active matrix liquid-crystal display (AMLCD) and system on panel (SOP). In this paper, poly-Si thin films were grown by novel high temperature process on the molybdenum (Mo) substrate. By applying a high current above 48A on a Mo substrate. We obtained an improved crystalline Si films with the crystallinity over 80%. We exhibit the properties of structural and electrical properties of high temperature poly-Si thin film transistor on the Mo substrates.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.267-270
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• 2011

In the process of inkjet-printed zinc tin oxide thin-film transistor, the effect of metallic interlayer underneath of source and drain electrode was investigated. The reason for the improved electrical properties with thin molybdenum oxide ($MoO_3$) layer was due to the chemically intermixed state of metallic interlayer, aluminum source and drain, and oxide semiconductor together. The atomic configuration of three Mo $3d_3$ and $3d_5$ doublets, three different Al 2p core levels, two Sn $3d_5$, and four different types of oxygen O 1s in the interfaces among those layers was confirmed by X-ray photospectroscopy.

• Current Photovoltaic Research
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• v.5 no.1
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• pp.20-24
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• 2017

Recently, three-dimensional (3D) light harvesting structures are highly attracted because of their high light harvesting capacity and charge collection efficiencies. In this study, we have fabricated $Cu_2ZnSn(S_xSe_{1-x})_4$ based 3D thin film solar cells on PR patterned Molybdenum (Mo) substrates using photolithography technique. Specifically, Mo patterns were deposited on PR patterned Mo substrates by sputtering and the thin Cu-Zn-Sn stacked layer was deposited over this Mo patterns by sputtering technique. The stacked Zn-Sn-Cu precursor thin films were sulfo-selenized to form CZTSSe pattern. Finally, CZTSSe absorbers were coated with thin CdS layer using chemical bath deposition and ZnO window layer was deposited over CZTSSe/CdS using DC sputtering technique. Fabricated 3-D solar cells were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF) analysis, Field-emission scanning electron microscopy (FE-SEM) to study their structural, compositional and morphological properties, respectively. The 3% efficiency is achieved for this kind of solar cell. Further efforts will be carried out to improve the performance of solar cell through various optimizations.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.1
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• pp.169-175
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• 2009

In this experiment molybdeum oxide($MoO_3$) films were prepared by a magnetic null discharge(MND) sputtering system and fundamental properties by XRD, XPS and SEM analysis were investigated. The initial and mean insulation resistance of the same with $MoO_3$ film were about 1.4[$M{\Omega}$] and 800[$k{\Omega}$] under the condition of applied voltage of 400[V]. The preferred orientation in the films changed from(100) to (210) with substrate temperature. Two XPS peaks of the $MoO_3$ photoelectron were detected at the binding energies of 228.9[eV] and 232.4[eV], while the binding energy of the O1s peak was 532.6[eV]. The substrate temperature and reactivity gives large effects to the structure and growth of the film and system is also very useful for performing the uniform reactive deposition. It can be found from the result of a $MoO_3$ film deposition that the system is very useful for performing the uniform reactive sputtering.

• Journal of the Korean Magnetics Society
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• v.9 no.4
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• pp.203-209
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• 1999

Effects of Mo and Si addition in Cr underlayer on magnetic properties of CoCrTa/CrMo and CoCrTa/Si thin films media were investigated. Thin films were prepared with DC magnetron sputtering system. The thickness of CoCrTa magnetic layer and Cr underlayer were fixed at 300 $\AA$ and 700 $\AA$, respectively. The substrate heating temperature was kept constant at 26$0^{\circ}C$ for both magnetic layer and underlayer preparation. The coercivity increase of CoCrTa film was realized due to Mo addition in Cr underlayer. Si addition made a small decrease in coercivity. Coercivity increase seems to be attributed by the improvement of preferred orientation of Cr(200) plane. It is found that lattice fit between Cr(200) and CoCrTa(1120) of CrMo underlayer is better than that of CrSi underlayer. This small misfit may also contribute coercivity increase.