• Korean Journal of Optics and Photonics
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• v.30 no.4
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• pp.159-166
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• 2019

The trajectory of the transmission ellipsometric pseudoconstant ${\rho}=tan{\psi}_{\mu}e^{i{\Delta}_{\mu}}$ of a uniaxially anisotropic substrate like PET forms a circle in polar coordinates, as the phase-retardation angle is varied at a fixed azimuthal angle. The radius as well as the center's position of this circle are functions of the azimuthal angle only. This circle passes through the point (1,0), and the center of this circle is located on the real axis. These characteristics of the circle are examined analytically, and are utilized to derive simple expressions for the azimuthal angle and the phase-retardation angle of the uniaxially anisotropic substrate using the measured transmission ellipsometric constant. Finally, we confirm that the derived expressions are well applied to the analysis of the optical anisotropy of a PET film.

• Corrosion Science and Technology
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• v.20 no.6
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• pp.451-465
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• 2021

In this investigation, electrochemical characteristics and damage behavior of 316L stainless steel polymer electrolyte membrane fuel cell(PEMFC) were analyzed by potentiodynamic and potentiostatic tests in cathode operating condition of PEMFC. As the result of potentiodynamic polarization test, range of passive region was larger than range of active region. In the result of potentiostatic test, damage depth and width, pit volume, and surface roughness were increased 1.57, 1.27, 2.48, and 1.34 times, respectively, at 1.2 V compared to 0.6 V at 24 hours. Also, as a result of linear regression analysis of damage depth and width graph, trend lines of damage depth and width according to applied potentials were 16.6 and 14.3 times larger, respectively. This demonstrated that applied potential had a greater effect on pitting damage depth of 316L stainless steel. The damage tendency values were 0.329 at 6 hours and 0.633 at 24 hours with applied potentials, representing rapid growth in depth direction according to the test times and applied potentials. Scanning electron microscopy images revealed that surface of specimen exhibited clear pitting damage with test times and applied potentials, which was thought to be because a stable oxide film was formed by Cr and Mo.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.138-143
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• 2022

We analyzed the influence of post-annealing on Ga₂O₃/n-type 4H-SiC heterojunction diode. Gallium oxide (Ga₂O₃) thin films were deposited by radio frequency (RF) sputtering. Post-deposition annealing at 950℃ in an Oxygen atmosphere was performed. The material properties of Ga₂O₃ and the electrical properties of the diodes were investigated. Atomic Force Microscopy (AFM), X-Ray Diffraction and Scanning Electron Microscope (SEM) images show a significant increase in the roughness and crystallinity of the O₂-annealed films. After Oxygen annealing X-ray Photoelectron Spectroscopy (XPS) shows that the atomic ratio of oxygen increases which is related to a decrease in oxygen vacancy within the Ga₂O₃ film. The O₂-annealed diodes exhibited higher on-current and lower leakage current. Moreover, the ideality factor, barrier height, and thermal activation energy were derived from the current-voltage curve by increasing the temperature from 298 - 434K.

• Journal of the Korea Convergence Society
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• v.13 no.3
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• pp.197-202
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• 2022

The CZTS solar cell is a thin film solar cell using an absorption layer composed of Cu, Zn, Sn, Se, and S, and is cheaper than a CIGS solar cell using In and Ga and more eco-friendly than a perovskite and CdTe solar cell using Pb and Cd. In this study, we conducted a bending test for flexible CZTS solar cells. Experiments were conducted in the direction of inner benidng with compressive stress and outer bending with tensile stress, and during the number of bending 1,000 times with a radius of curvature of 50 mmR, the efficiency of the solar cell decreased by up to 12.7%, and the biggest cause of efficiency reduction in both directions was a large decrease in parallel resistance.

• Transactions of the Korean hydrogen and new energy society
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• v.33 no.6
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• pp.808-818
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• 2022

In this research paper, we investigated the cryogenic line chill down characteristics of liquefied natural gas (LNG). A numerical analysis model was established and verified so that it can calculate the precise cooling characteristics of cryogenic fluid for the stable and safe utilization especially such as LNG and liquid hydrogen. The numerical modeling was programmed by C++ as an one-dimensional homogeneous model. The thermohydraulic cooling process was simulated using mass, momentum, energy conservation equations and appropriate heat transfer correlations. In this process, the relevant heat transfer correlations for nuclear boiling, transition boiling, film boiling, and single-phase heat transfer that can predict the experimental results were implemented. To verify the numerical modeling, several cryogenic line chill down experiments using LNG were conducted at the Korea Institute of Machinery & Materials (KIMM) LNG and Cryogenic Technology Center.

• Composites Research
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• v.20 no.6
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• pp.8-14
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• 2007

Debonding failure characteristics of the composite skin-stiffener specimens were experimentally investigated. The influences of bonding methods, types of stiffener shape and various secondary bonding parameters were evaluated. Present test results combined with the previous test results[1] showed that the failure displacement of the skin-stiffener specimens well evaluates the skin-stiffener debonding failure strength of the composite stiffened panels. The specimens with an open type stiffener had lower bending stiffness and larger failure displacement than those with a closed type stiffener. Secondary bonding and co-curing with adhesive had better failure strength than co-curing without adhesive film. Secondary bonded specimens failed by adhesive failure and co-cured specimens failed by delamination failure. As the bondline thickness was thinner, the skin-stiffener specimens had higher failure strength. The fillets had no influence on failure strength of the specimens. The influence of the surface roughness was shown according to types of stiffener shape.

• Corrosion Science and Technology
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• v.22 no.5
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• pp.359-367
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• 2023

The localized corrosion resistance of the Ni-based Inconel 718 alloy after solution heat treatment was evaluated using electrochemical techniques in a solution of 25 wt% NaCl and 0.5 wt% acetic acid. Solution heat treatment at 1050 ℃ for 2.5 hours resulted in an increased average grain diameter. Both Ti carbides (10 ㎛ diameter) and Nb-Mo carbides (1 - 9 ㎛ diameter) were distributed throughout the material. Despite heat treatment, the shape and composition of these carbides remained consistent. An increase in solution temperature led to a decrease in pitting potential value. However, the pitting potential value of solution heat-treated Inconel 718 was consistently higher than that of as-received Inconel 718 at all tested temperatures. Localized corrosion initiation occurred at 0.4 V_SSE in a temperature environment of 80 ℃ for both as-received and solution heat-treated Inconel 718 alloys. X-ray photoelectron spectroscopic analysis indicated that the composition of the passive film formed on specimen surfaces remained largely unchanged after solution heat treatment, with O1s, Cr2p_3/2, Fe2p_3/2, and Ni2p_3/2 present. The difference in localized corrosion resistance between as-received and solution heat-treated Inconel 718 alloys was attributable to microstructural changes induced by the heat treatment process.

• Journal of Sensor Science and Technology
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• v.33 no.1
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• pp.56-61
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• 2024

The quality of the display can be managed by effectively managing the temperature generated by the panel during use. Conventional display panels rely on an external reference resistor for temperature monitoring. However, this approach is easily affected by external factors such as temperature variations from the driving circuit and chips. These variations reduce reliability, causing complicated mounting owing to the external chip, and cannot monitor the individual pixel temperatures. However, this issue can be simply and efficiently addressed by integrating temperature sensors during the display panel manufacturing process. In this study, we fabricated and analyzed a temperature sensor integrated into an a-IGZO (amorphous indium-gallium-zinc-oxide) TFT array that was to precisely monitor temperature and prevent the deterioration of OLED display pixels. The temperature sensor was positioned on top of the oxide TFT. Simultaneously, it worked as a light shield layer, contributing to the reliability of the oxide. The characteristics of the array with integrated temperature sensors were measured and analyzed while adjusting the temperature in real-time. By integrating a temperature sensor into the TFT array, monitoring the temperature of the display became easier and more accurate. This study could contribute to managing the lifetime of the display.

• Korean Journal of Materials Research
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• v.4 no.8
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• pp.895-905
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• 1994

The solid phase crystallization behavior of undoped amorphous $Si_{1-x}Ge_{x}$ (X=O to 0.53) alloyfilms was studied by X-ray diffractometry(XRD) and transmission electron microscopy(TEM). Thefilms were deposited on thermally oxidized 5" (100) Si wafer by MBE(Mo1ecular Beam Epitaxy) at 300'C and annealed in the temperature range of $500^{\circ}C$ ~ $625^{\circ}C$. From XRD results, it was found that the thermal budget for full crystallization of the film is significantly reduced as the Ge concentration in thefilm is increased. In addition, the results also shows that pure amorphous Si film crystallizes with astrong (111) texture while the $Si_{1-x}Ge_{x}$ alloy film crystallzes with a (311) texture suggesting that the solidphase crystallization mechanism is changed by the incorporation of Ge. TEM analysis of the crystallized filmshow that the grain morphology of the pure Si is an elliptical and/or a dendrite shape with high density ofcrystalline defects in the grains while that of the $Si_{0.47}Ge_{0.53}$ alloy is more or less equiaxed shape with muchlower density of defects. From these results, we conclude that the crystallization mechanism changes fromtwin-assisted growth mode to random growth mode as the Ge cocentration is increased.ocentration is increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.388-388
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• 2016

Chemical mist deposition (CMD) of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was investigated with cavitation frequency f, solvent, flow rate of nitrogen, substrate temperature $T_s$, and substrate dc bias $V_s$ as variables for efficient PEDOT:PSS/crystalline (c-)Si heterojunction solar cells (Fig. 1). The high-speed camera and differential mobility analysis characterizations revealed that average size and flux of PEDOT:PSS mist depend on f, solvent, and $V_s$. The size distribution of mist particles including EG/DI water cosolvent is also shown at three different $V_s$ of 0, 1.5, and 5 kV for a f of 3 MHz (Fig. 2). The size distribution of EG/DI water mist without PEDOT:PSS is also shown at the bottom. A peak maximum shifted from 300-350 to 20-30 nm with a narrow band width of ~150 nm for PEDOT:PSS solution, whose maximum number density increased significantly up to 8000/cc with increasing $V_s$. On the other hand, for EG/water cosolvent mist alone, the peak maximum was observed at a 72.3 nm with a number density of ~700/cc and a band width of ~160 nm and it decreased markedly with increasing $V_s$. These findings were not observed for PEDOT:PSS/EG/DI water mist. In addition, the Mie scattering image of PEDOT:PSS mist under white bias light was not observed at $V_s$ above 5 kV, because the average size of mist became smaller. These results imply that most of solvent is solvated in PEDOT:PSS molecule and/or solvent is vaporized. Thus, higher f and $V_s$ generate preferentially fine mist particle with a narrower band width. Film deposition occurred when $V_s$ was impressed on positive to a c-Si substrate at a Ts of $30-40^{\circ}C$, whereas no deposition of films occurred on negative, implying that negatively charged mist mainly provide the film deposition. The uniform deposition of PEDOT:PSS films occurred on textured c-Si(100) substrate by adjusting $T_s$ and $V_s$. The adhesion of CMD PEDOT:PSS to c-Si enhanced by $V_s$ conspicuously compared to that of spin-coated film. The CMD PEDOT:PSS/c-Si solar cell devices on textured c-Si(100) exhibited a ${\eta}$ of 11.0% with the better uniformity of the solar cell parameters. Furthermore, ${\eta}$ increased to 12.5% with a $J_{sc}$ of $35.6mA/cm^2$, a $V_{oc}$ of 0.53 V, and a FF of 0.67 with an antireflection (AR) coating layer of 20-nm-thick CMD molybdenum oxide $MoO_x$ (n= 2.1) using negatively charged mist of 0.1 wt% 12 Molybdo (VI) phosphoric acid n-Hydrate) $H_3(PMo_{12}O_40){\cdot}nH_2O$ in methanol. CMD. These findings suggest that the CMD with negatively charged mist has a great potential for the uniform deposition of organic and inorganic on textured c-Si substrate by adjusting $T_s$ and $V_s$.