• Journal of the Korean Chemical Society
• /
• v.14 no.2
• /
• pp.141-145
• /
• 1970

The reduction of Mo-thiocyanate (V) complex on dropping mercury electrode has been studied at ionic strength 0.6 with pH less than 2.3. D-C polarogram obtained from acidic solutions are reversible, diffusion controlled current. The electrode reaction of Mo-thiocyanate(V) may be represented as follows. $MoO(SCN)_3\;+\;2H^+\;+\;2e\;{\to}\;Mo(SCN)_2{^+}\;+\;H_2O\;+\;SCN^-$From this reaction, the half wave potential assumed to be $E_{1/2}\;=\;E_0'\;-\;0.059\;pH\;-\;0.03\;log{\;frac{[Mo(SCN)_2{^+}][SCN^-]}{[MoO(SCN)_3]}}$Considering the dissociation of this complex, however, it was estimated that the electrode reaction may be written by. $MoO^{+3}\;+\;3SCN^-\;+\;2H^+\;+\;2e\;{\to}\;Mo(SCN)_2{^+}\;+\;SCN^-\;+\;H_2O$.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2015.11a
• /
• pp.258-259
• /
• 2015

$CuInSe_2$(CIS)층에 Na의 첨가는 태양전지 셀의 효율을 향상시키는데 도움을 주는 것으로 알려져 있다. 본 연구에서는 Na이 없는 코닝 유리 기판에 Mo/Mo-Na 이중 박막을 후면 전극으로 이용하여 CIS층의 Na소스로 작용하도록 하였다. CIS/Mo/Mo-Na 다층 박막을 제조한 후, AES분석을 통해 Na은 Mo/Na층과 CIS층의 계면과 CIS층의 표면에 주로 분포하는 것을 알 수 있었다. XRD분석을 통해서 Na함량이 증가할수록 Mo박막의 우선성장면 (110)면의 피크는 감소하였고, CIS의 우선 성장면인 (112)면은 점차 증가하여 Mo-Na층이 200 nm일 때, 최댓값을 가지고 이후로는 감소하는 경향을 보인다. CIS의 결정은 기판에 수직인 방향으로 덴드라이트 성장을 한다. Mo-Na층이 200 nm까지는 밀도가 높은 결정이 성장되지만, 그 이상으로 Na농도가 증가하면 결정 입자의 크기는 다소 성장하지만 밀도가 현저하게 감소한다. 이 결과들로 보아 CIS층의 Na농도조절은 Mo/Mo-Na 이중층의 두께조절을 통해 가능하며, Na이 CIS층에 초과되어 첨가되면 특성이 저하된다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.217-218
• /
• 2000

This paper describes a formation of the Mo-silicide on Mo tip to compare the emission characteristics of the Mo tip. Cone-shaped Mo tip arrays were fabricated and silicidized by evaporating a 15nm-thick a-Si film on Mo tip arrays and annealing it in inert ambient at the temperature of $1000\;^{\circ}C$ for 60 sec. The $Mo_5Si_3$ phase of Mo-silicide was observed through X-ray diffraction (XRD) analysis. Although the gate voltage of the Mo-silicide tip increased by 38 V to obtain the current level of 20 nA/tip, the dependence of emission current on vacuum level was improved.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.11a
• /
• pp.125-127
• /
• 2007

MoN 코팅막은 Ar과 $N_2$가 섞인 가스 상태 안에서 몰리브덴(Mo) 타겟을 사용해서 아크 이온 플레이팅법을 사용하여 stainless steel 표면 위에 증착을 시켰다. MoN 코팅막의 미세 결정 구조의 특징은 X-선 회절 분석(X-ray Diffractormeter, Phillips co. X'pert)과 XPS를 사용해서 측정하였다. MoN 코팅막은 순수 Mo 코팅막의 13GPa 보다 높은 25 GPa의 미세경도값을 나타냈으며, 또한 Mo 코팅막에 N의 함량이 증가할수록 마찰계수가 낮아지는 것을 알 수 있었다. 이번 연구에서는 MoN 코팅막에서 질소 함량을 변화 시켜 MoN 코팅막의 미세구조와 그 특성에 대하여 연구하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.38-38
• /
• 2018

TiMoN 코팅층은 우수한 내마모 특성과 낮은 마찰계수를 보여 많은 연구가 진행되고 있다. 본 연구에서는 음극아크 증착으로 질소 가스 유량, 아크 전류, 기판 전압 등 공정 변수를 제어하여 TiMoN 코팅층을 스테인리스와 초경 기판 위에 제조하고 색상, 미세구조, 경도 등 물리적 특성을 평가하였다. TiMo 타겟은 Mo가 약 8 at.% 함유되어 있으며 직경은 80 mm이었다. 색차계를 이용하여 TiMoN 코팅층의 색상을 분석한 결과, 질소 유량이 증가할수록 $a^*$와 $b^*$ 값이 증가하는 경향을 확인하였다. 질소 유량 90 sccm으로 제조한 TiMoN 코팅층은 TiN 코팅층과 유사한 색상을 보였다. TiMoN 코팅층의 조성을 에너지분산형 분광기(energy dispersive spectroscopy)로 분석한 결과, 타겟과 유사한 조성을 보였다. TiMoN 코팅층의 단면을 주사전자현미경으로 관찰한 결과, 주상정 형성이 확인되었으며 코팅층 표면에는 음극 아크 공정 시 발생하는 거대입자가 발견되었다. 질소 유량 50 sccm으로 제조한 TiMoN 코팅층은 약 3000 Hv의 경도 값을 보였다. X-선 분광기로 TiMoN 코팅층의 결정성을 분석한 결과, TiN과 유사한 합금상이 형성된 것을 확인할 수 있었다. TiMoN 코팅층은 TiN과 유사한 색상을 보였으며 경도는 TiN보다 높은 값을 보여 절삭공구, 금속 가공용 부품 등 고경도 코팅층으로 활용이 가능할 것으로 판단된다.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09b
• /
• pp.1329-1330
• /
• 2006

The effect of Cu on the hydrogen reduction of $MoO_3$ powders was investigated by measuring the humidity change during a non-isothermal process of hydrogen reduction. The presence of Cu induced a shift in the reduction temperature and strongly affected the reduction processes of $MoO_3\rightarrowMo_4O_{11}\rightarrowMoO_2$, which comprised the contained chemical vapor transport of $MoO_x(OH)_2$. This study suggests that the surface of the Cu grains acts as a nucleation site for the reduction of $MoO_x(OH)_2$ to $MoO_2$ particles from $MoO_3$ or $Mo_4O_{11}$. Such an activated reduction process results in the deposition of Mo and $MoO_2$ particles on the surface of the Cu.

• Resources Recycling
• /
• v.12 no.2
• /
• pp.36-44
• /
• 2003

The present work relates to the recovery of dissolved Mo from spent mandrel dissolving acid solution by injecting ammonia gas. In order to optimize the process parameters for high yield and high purity of recovered Mo products, a bench scale and a pilot scale experiments were carried out. As a result, more than 99.5% of Mo in spent acid was recovered in the form of ammonium molybdate(4MoO$_3$.$2NH_3$.$H_2$O). The purity of Mo products recovered was higher than 99.5%. In addition, the mother liquor, residual solution after precipitation and filtration of ammonium molybdate solid particles, could be utilized as fertilizers.

• Journal of the Korean Magnetics Society
• /
• v.9 no.5
• /
• pp.256-262
• /
• 1999

Sputter deposited CoCr(Mo)/Si film were studied with emphasis on the correlation between magnetic properties and crystallographic orientation. The perpendicular coercivities of CoCr films decreased with Si underlayer thickness, whereas those of CoCrMo films increased with Si underlayer thickness. It has been explained that additions of the larger atomic radius Mo atoms in CoCr films impedes crystal growth resulting in a decrease in grain size, thus this small grain size may induce high perpendicular coercivity. The c-axis alignment of CoCrMo film was improved due to addition of 2at.%Mo. It means CoCrMo layer grow self-epitaxial directly from orientation and structure of Si underlayer when the main layer grow on underlayer.

• Particle and aerosol research
• /
• v.9 no.1
• /
• pp.31-36
• /
• 2013

In this study, Mo metal powder was prepared by hydrogen reduction of Mo trioxides with different purity of 2N and 3N grades. We have obtained Mo metal powder with oxygen content of 1450 ppm by hydrogen reduction and subsequent heat treatment for degassing. Using the Mo metal powder, a low-oxygen Mo ingot was prepared by repetitive vacuum arc melting. The oxygen content of the obtained Mo ingot was less than 70 ppm after vacuum arc melting for 30 min. The purity of the Mo metal powder and the ingot was evaluated using glow discharge mass spectrometry. The purity of the respective Mo ingots was increased to 3N and 4N grades from the Mo powder of 2N and 3N grades after the repetitive vacuum arc melting. The low oxygen Mo ingot thus can be used as a raw material for sputtering targets.

• Journal of Surface Science and Engineering
• /
• v.49 no.4
• /
• pp.368-375
• /
• 2016

MoN-Cu thin films were prepared to achieve appropriate properties of high hardness and low friction coefficient, which could be applied to automobile engine parts for reducing energy consumption as well as solving wear problems. Composite thin films of MoN-Cu have been deposited by various processes using multiple targets such as Mo and Cu. However, those deposition with multiple targets revealed demerits such as difficulties in exact control of composition and homogeneous deposition. This study is aiming for suggesting an appropriate process to solve those problems. A single alloying target of Mo-Cu (10 at%) was prepared by powder metallurgy methods of mechanical alloying (MA) and spar plasma sintering (SPS). Thin film of MoN-Cu was then deposited by magnetron sputtering using the single alloying target of Mo-Cu (10 at%). Properties of the resulting MoN-Cu thin film were examined and compared to those of MoN-Cu thin films prepared with double targets of Mo and Cu.