• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.213-218
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• 2004

Be-codoped GaMnAs layers were systematically grown via molecular beam epitaxy with varying Mn- and Be-flux. Mn flux was controlled to cover from solid solution type GaMnAs to precipitated GaMnAs. Two Be flux were chosen to exhibit semiconducting and metallic resistivity in the grown layers. The structural, electrical, and magnetic properties of GaAs:(Mn, Be) were investigated. The lightly Be-codoped GaMnAs layers showed ferromagnetism at room temperature, but did not reveal magnetotransport due to small magneto-resistance and high resistance of the matrix. However, room temperature magnetotransport could be observed in the degenerate Be-codoped GaMnAs layers, and which was assisted by the high conductivity of the matrix. The Be-codoping has promoted segregation of new ferromagnetic phase of MnGa as well as MnAs.

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.444-449
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• 2008

Samples of GaMnAs, GaMnAs codoped with Be, and GaMnAs simultaneously codoped with Be and Mg were grown via low-temperature molecular beam epitaxy (LT-MBE). Be codoping is shown to take the Ga sites into the lattice efficiently and to increase the conductivity of GaMnAs. Additionally, it shifts the semiconducting behavior of GaMnAs to metallic while the Mn concentration in the GaMnAs solid solution is reduced. However, with simultaneous codoping of GaMnAs with Be and Mg, the Mn concentration increases dramatically several times over that in a GaMnAs sample alone. Mg and Be are shown to eject Mn from the Ga sites to form MnAs and MnGa precipitates.

• Korean Journal of Materials Research
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• v.30 no.12
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• pp.666-671
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• 2020

The electronic structure and magnetic properties of chalcopyrite (CH) AlGaAs2 with dopant Mn at 3.125 and 6.25 % concentrations are investigated using first-principles calculations. The CH AlGaAs2 alloy is a p-type semiconductor with a small band-gap. The AlGaAs2:Mn shows that the ferromagnetic (FM) state is the most energetically favorable one. The Mn-doped AlGaAs2 exhibits FM and strong half-metallic ground states.The spin polarized Al(Ga,Mn)As2 state (Al-rich system) is more stable than the (Al,Mn)GaAs2 state (Ga-rich system), which has a magnetic moment of 3.82mB/Mn. The interaction between Mn-3d and As-4p states at the Fermi level dominates the other states.The states at the Fermi level are mainlyAs-4p electrons, which mediate strong interaction between the Mn-3d and As-4p states. It is noticeable that the FM ordering of dopant Mn with high magnetic moment originates from the As(4p)-Mn(3d)-As(4p) hybridization, which is attributed to the partially unfilled As-4pbands. The high FM moment of Mn is due to the double-exchange mechanism mediated by valence-band holes.

• Journal of the Korean Magnetics Society
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• v.16 no.2
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• pp.111-114
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• 2006

We investigated the magnetism and electronic structures for the layered structures consisting of (110) layers of zinc-blende CrAs and MnAs. We calculated the electronic structures for $(CrAs)_3(MnAs)_3(110)$ superlattice consisted of alternating three layers of CrAs(110) and MnAs(110) by the full-potential linearized augmented plane wave (FLAPW) method. The calculated magnetic moment of Cr in interface layer ($3.07\;\mu_B$) was slightly larger than that of Cr atom in center layer ($3.06\;\mu_B$), while that of interface Mn atom ($3.74\;\mu_B$) was slightly smaller than the value of Mn atom in center layer ($3.76\;\mu_B$). The electronic structure and half-metallicity in this superlattice were discussed using the calculated density of states.

• Journal of Soil and Groundwater Environment
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• v.13 no.3
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• pp.52-58
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• 2008

Mn-impregnated activated carbon (Mn-AC) prepared at different conditions was applied in the treatment of synthetic wastewater containing both organic and inorganic contaminants. Phenol and As(III) was used as the representative organic and inorganic contaminants, respectively. After evaluation of the physicochemical characteristic and stability of Mn-AC, oxidation of As(III) as well as adsorption of phenol by activated carbon(AC) and Mn-AC were investigated in a batch reactor. To investigate the stability of Mn-AC, dissolution of Mn from each Mn-AC was measured pH ranging from 2 to 4. Although Mn-AC was unstable at a strong acidic condition, the dissoluted Mn was below 3 ppm at pH 4. XRD analysis of Mn-AC indicated that the mineral type of the impregnated manganese was $Mn_2O_3$. From the simultaneous treatment of As(III) and phenol by AC and Mn-AC, As(III) oxidation by Mn-AC was greater than that by AC at lower pH, while the reverse order was observed at higher pH. After impregnation of Mn onto AC, 13% decrease of the surface area was observed, causing 8% reduction of phenol removal. Considering removal properties of As(III) and phenol, Mn-AC could be applied in the simultaneous treatment of wastewater contaminated with multi-contaminants.

• Journal of Magnetics
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• v.10 no.3
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• pp.103-107
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• 2005

Magnetotransport is a prerequisite to realization of electronic operation of spintronic devices and it would be more useful if realized at room temperature. The effects of Be codoping on GaMnAs on magnetotransport were investigated. Mn flux was varied for growth of precipitated GaMnAs layers under a Be flux for degenerate doping via low-temperature molecular beam epitaxy. Magnetotransport as well as ferromagnetism at room temperature were realized in the precipitated GaAs:(Mn,Be) layers. Codoping of Be was shown to promote formation of MnGa clusters, and annealing process further stabilized the cluster phases. The room-temperature magnetic properties of the layers originate from the ferromagnetic clusters of MnGa and MnAs embedded in GaAs. The degenerately doped metallic GaAs matrix allowed the visualization of the magnetotransport through anomalous Hall effect.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.96-101
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• 2001

In this study, diluted magnetic $Zn_{1-x}Mn_{x}Te$ epilayers were grown on GaAs(100) substrates by hot-wall epitaxy, and their characteristics were systematically examined. The maximum Mn composition of the $Zn_{1-x}Mn_{x}Te$ epilayers was 0.97. The crystallographic orientation was toward <100> and the structure of the $Zn_{1-x}Mn_{x}Te$ epilayers was the zincblende structure, identical to those of the GaAs substrate. With increasing the substrate temperature (350~$400^{\circ}C$), Mn composition increased (0.02~0.23) and he quality of the epilayer became worse. The lattice constants increased linearly with increasing Mn composition, but the band gap energy increased nonlinearly with increasing x.

• Journal of the Korean Magnetic Resonance Society
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• v.6 no.1
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• pp.20-37
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• 2002

MnAPSO-34 and Mn-impregnated SAPO-34(Mn-SAPO-34) sample were prepared with various manganese contents and studied by electron spin resonance(ESR) and electron spin echo modulation(ESEM). Electron spin echo modulation analysis of 0.07mo1 ％ Mn(relative to p) in MnAPSO-34 with adsorbed D$_{2}$O shows two deuteriums at 0.26 nm and two at 0.36 nm from Mn. This suggests that two waters hydrate an MnO$_{4}$ configuration with a D-O bond orientation for the waters as expect for a negatively charged site at low manganese content (0.1 mol％), the ESR spectra of MnAPSO-34 and MnH-SAPO-34 exhibit the same parameters(g 2.01 and A 89 G), but the spectra obtained from MnAPSO-34 samples are better resolved. The decomposition temperature of as-synthesized MnAPSO-34 were in the range of 200-600 $^{\circ}C$ of the morpholine which is 12 $^{\circ}C$ higher than that in as-synthesized MnH-SAPO-34. Infrared spectra showed that the position of a band at 3450 $cm^{-1}$ / shifted about 15 $cm^{-1}$ / toward higher energy in MnAPSO-34 versus MnH-SAPO-34. The modulation depth of the two-pulse ESE of MnAPSO-34 with adsorbed D$_{2}$O is deeper than that of MnH-SAPO-34 with adsorbed D$_{2}$O. Three-pulse ESEM of MnAPSO-34 and MnH-SAPO-34 with adsorbed deuterium oxide shows that the local environments of manganese in the hydrated samples are different, suggesting that Mn(II) is framework substituted in MnAPSO-34 since it obviously occupies an extraframework position in MnH-SAPO-34.

• Proceedings of the Korean Magnetic Resonance Society Conference
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• 2002.08a
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• pp.80-80
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• 2002

MnPSO-34 and Mn-impregnated SAPO-34 (Mn-SAPO-34) sample were prepared with various manganese contents and studied by electron spin resonance (ESR) and electron spin-echo modulation (ESEM). Electron spin-echo modulation analysis of 0.07mol ％ Mn(relative to p) in MnAPSO-34 with adsorbed D$_2$O shows two deuteriums at 0.25 nm and two at 0.36 nm from Mn. This suggests that two waters hydrate an MnO4 configuration with a D-O bond orientation for the waters as expect for a negatively charged site at low manganese content (0.07 mol％), the ESR spectra of MnAPSO-34 and MnH-SAPO-34 exhibit the same parameters (g 2.02 and A 87 G), but the spectra obtained from MnAPSO-34 samples are better resolved. TGA of as-synthesized MnAPSO-34 shows that the decomposition temperature in the range 200-$600^{\circ}C$ of the morpholine is 12$^{\circ}C$ higher than that in as-synthesized MnH-SAPO-34. Infrared spectra shows that the position of a band at about 15 cm-1 toward higher energy in MnAPSO-34 versus MnH-SAPO-34. The modulation depth of the two-pulse ESE of MnAPSO-34 with absorbed D$_2$O is deeper than that of MnH-SAPO-34 with absorbed D$_2$O. Three-pulse ESEM of MnAPSO-34 and MnH-SAPO-34 with absorbed deuterium oxide shows that the local environments of manganese in the hydrated samples are different, suggesting that Mn(II) is framework substituted in MnAPSO-34 since it obviously occupies an extra-framework position in MnH-SAPO-34

• Korean Journal of Materials Research
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• v.15 no.1
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• pp.73-77
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• 2005

Motivated by the enhanced magnetic properties of Mg-codoped GaMnN ferromagnetic semiconductors, Be-codoped GaMnAs films were grown via molecular beam epitaxy with varying Mn flux at a fixed Be flux. The structural, electrical, and magnetic properties were investigated. GaAs:(Mn,Be) films showed metallic behavior while GaAs:Mn films showed semiconducting behavior as determined by the temperature dependent resistivity measurements. The Hall-effect measurements with varying magnetic field showed clear anomalous Hall effect up to room temperature proving ferromagnetism and magnetotransport in the GaAs:(Mn,Be) films. Planar Hall resistance measurement also confirmed the properties. The dramatic enhancement of the Curie temperature in GaMnAs system was attributed to Be codoping in the GaMnAs films as well as MnAs precipitation.