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http://dx.doi.org/10.4283/JKMS.2004.14.6.213

Ferromagnetism and Magnetotransport of Be-codoped GaMnAs  

Im, W.S. (충남대학교 재료공학과)
Yu, F.C. (충남대학교 재료공학과)
Gao, C.X. (충남대학교 재료공학과)
Kim, D.J. (충남대학교 재료공학과)
Kim, H.J. (충남대학교 재료공학과)
Ihm, Y.E. (충남대학교 재료공학과)
Kim, C.S. (한국표준과학연구원)
Publication Information
Journal of the Korean Magnetics Society / v.14, no.6, 2004 , pp. 213-218 More about this Journal
Abstract
Be-codoped GaMnAs layers were systematically grown via molecular beam epitaxy with varying Mn- and Be-flux. Mn flux was controlled to cover from solid solution type GaMnAs to precipitated GaMnAs. Two Be flux were chosen to exhibit semiconducting and metallic resistivity in the grown layers. The structural, electrical, and magnetic properties of GaAs:(Mn, Be) were investigated. The lightly Be-codoped GaMnAs layers showed ferromagnetism at room temperature, but did not reveal magnetotransport due to small magneto-resistance and high resistance of the matrix. However, room temperature magnetotransport could be observed in the degenerate Be-codoped GaMnAs layers, and which was assisted by the high conductivity of the matrix. The Be-codoping has promoted segregation of new ferromagnetic phase of MnGa as well as MnAs.
Keywords
GaMnAs; Be codoping; ferromagnetic semiconductor; spintronics;
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