• Journal of Magnetics
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• v.6 no.4
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• pp.145-147
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• 2001

The effect of interface roughness between [Ni/Mn] superlattice and pinned NiFe layer on magnetoresistance (MR) of [Ni/Mn] superlattice-based spin valve films was investigated. Antiferromagnetic phase structure and interface roughness of [Ni/Mn] superlattice spin valve films were compared in the as-deposited and the annealed samples at 240$\^{C}$, respectively. Surface morphology of spin valves was substantially flattened due to the formation of the antiferromatic NiMn phase. In case of Co insertion between Cu and NiFe, the interlace roughness and MR ratio in the annealed [NiMn] superlattice and pinned NiFe/Co layer increased more than those in the annealed [Ni/Mn] superlattice and pinned NiFe layers respectively.

• Journal of the Korean Ceramic Society
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• v.34 no.10
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• pp.1003-1008
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• 1997

The (La, Sr)MnO3 powder used as air-electrode material of Solid Oxide Cell (SOFC) was synthesized by Modified-GNP(Modified-Glycine Nitrate Process). The powders were prepared using oxide and carbonate stable in atmosphere and nitric acid was used as a solvent of starting material as well as an oxidant for combustion. The (La, Sr)MnO3 powders were synthesized with 0.5, 1, 2, 3, 4 of glycine/cation molar ratio. The ICP (Inductively Coupled Plasma Mass Spectrometer) result represented compositional equality between synthesized and desired powders. In case of 2 molar ratio, the as-synthesized powder showed perovskite phase and specific surface area were 19 $m^2$/g. After calcination of 85$0^{\circ}C$, the calcined powder except 0.5, 1 molar ratio of glycine to cation showed perovskite phase.

• Journal of Korea Foundry Society
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• v.30 no.4
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• pp.130-136
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• 2010

Sulfide segregation behavior, characteristics of solidification microstructure and compositional distribution in the riser/castings junction of heavy-section main bearing support (MBS) steel castings were investigated; Sulfide streaks of A segregation were formed in the transitional region from columnar grain to coarse equiaxed grain and floated with aggregation of the dendritic free crystal. Solute segregation behaviors of elements Si, P and S were V shape negative segregation from the bottom of the castings to upper part of the riser with the reference of vertical center-line of the specimen block. Those of elements C and Mn were V shape negative segregation in the main body and A shape positive segregation in the riser of the casting. Just beneath the pipe shrinkage in the riser segregation ratio of each element was the highest, and that of S was 3.6 times higher, C 3.3 times, P 2.1 times, Si 1.6 times and Mn 1.0 times respectively. [Mn/S] ratio of the specimen block was distributed in the wide range of 20~275.

• Journal of Powder Materials
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• v.15 no.5
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• pp.345-351
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• 2008

The effects of the dopant (Mn) ratio on the microstructure and thermoelectric properties of $FeSi_2$ alloy were studied in this research. The alloy was fabricated by a combination process of ball milling and high pressure pressing. Structural behavior of the sintered bulks were systematically investigated by XRD, SEM, and optical microscopy. With increasing dopan (Mn) ratio, the density and ${\varepsilon}-FeSi$ phase of the sintered bulks increased and maximum density of 94% was obtained in the 0.07% Mn-doped alloy. The sintered bulks showed fine microstructure of ${\alpha}-Fe_{2}Si_{5}$, ${\varepsilon}-FeSi$ and ${\beta}-FeSi_2$ phase. The semiconducting phase of ${\beta}-FeSi_2$ was transformed from ${\alpha}-Fe_{2}Si_{5}+{\varepsilon}-FeSi$ phase by annealing.

• Korean Journal of Metals and Materials
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• v.46 no.5
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• pp.289-295
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• 2008

The effect of the alloy elements(Si/Mn) ratio on the coating quality including wettabilty with molten zinc, galvannealing kinetics and crater has been investigated in interstitial-free high strength steel(IFHSS) containing Si and Mn. When the Si/Mn ratio was below 0.75, IF-HSS exhibited a good wettability leading to a good galvannealed coating quality after annealing at $800^{\circ}C$ for 40s in $15%H_2-N_2$ mixed gas with dew point $-60^{\circ}C$. In contrast, the wettability and galvannealed coating quality were deteriorated in the Si/ Mn ratio above 0.75. It is shown that they have relevance to oxides forms by selective oxidation on the steel surface. The oxide particles dispersed on the steel surface with a surface coverage of below 40% resulted in good wettability and galvannealed coating quality. The oxide particle is mainly consisted of $Mn_2SiO_4$ with low contact angle in molten zinc. On the other hand, the continuous oxide layer on the steel surface, such as network- and film-type,caused to poor wettability and galvannealed coating quality. The coverage of oxide layer was above 80%, and its chemical species was $SiO_2$ with high contact angle in molten zinc. Consequently, the Si/Mn alloy ratio played an importance role in galvannealed coating quality of IF-HSS.

• Metals and materials international
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• v.24 no.6
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• pp.1333-1345
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• 2018

The effect of manganese sulfide (MnS) inclusions on the machinability of free-cutting steel is based on their morphology, size and distribution. Furthermore, the plasticity of MnS is high during the hot working caused different characterization of MnS. In this study, the deformation behavior of MnS in 1215MS steel after a thermomechanical process was investigated at 1323 K. The microstructures of MnS inclusions were characterized by optical microscopy, scanning electron microscopy, energy-dispersive spectrometry, and electron backscattering diffraction (EBSD). As the thickness reduction of the inclusions increased from 10 to 70%, their average aspect ratio increased from 1.20 to 2.39. In addition, the deformability of MnS inclusions was lower than that of the matrix. The possible slip systems of A, B, C, and D plane traces were (${\bar{1}}0{\bar{1}}$)[${\bar{1}}01$], ($10{\bar{1}}$)[101], (011)[$01{\bar{1}}$], and (110)[$1{\bar{1}}0$]. Furthermore, the EBSD measurements suggested that slip planes in MnS inclusions occur on {110} planes.

• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.1-5
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• 2008

ZnS is an attractive material for future optical and electrical devices since it has a direct and wide band gap to provide blue emission at room temperature. In this study, inductively coupled $BCl_3/Ar$ plasma was used to etch ZnS:Mn thin films. The maximum etch rate of 164.2 nm/min for ZnS:Mn was obtained at a $BCl_3(20)/Ar(80)$ gas mixing ratio, an rf power of 700 W, a dc bias voltage of -200V, a total gas flow of 20 sccm, and a chamber pressure of 1Pa. The etch behaviors of ZnS:Mn thin films under various plasma parameters showed that the ZnS:Mn were effectively removed by the chemically assisted physical etching mechanism. The surface reaction of the ZnS:Mn thin films was investigated by X-ray photoelectron spectroscopy. The XPS analysis revealed that Mn had detected on the surface ZnS:Mn etched in $BCl_3/Ar$ plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.124-125
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• 2005

ZnS:Mn thin films have attracted great interest as electroluminescence devices. In this study, inductively coupled BCl$_3$/Ar plasma was used to etch ZnS:Mn thin films. We obtained the maximum etch rate of ZnS:Mn thin films was 2209 ${\AA}$/min at a BCl$_3$(20%)/Ar(80%) gas mixing ratio, an RF power of 700 W, a DC bias voltage of-250 V, a total gas flow of 20 sccm, and a chamber pressure of 1 Pa. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.668-673
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• 1997

A Single-crystalline Mn-Zn Ferrite (110 orientation) was masklessly etched by focused Ar laser irradiation in an H$_3$PO$_4$ solution. The depth of the etched grooves increases with increasing a laser power, decreasing a scan speed, and increasing the H$_3$PO$_4$concentration. The width of the etched grooves increases with a increasing laser power, but was relatively insensitive to the scan speed and H$_3$PO$_4$concentration. High etching rate of up to 714 ${\mu}{\textrm}{m}$/s and an aspect ratio of 6 for vertical slab structure have been obtained by the light-guiding effect of the laser bean in the H$_3$PO$_4$ solution.

• Journal of Magnetics
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• v.5 no.2
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• pp.50-54
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• 2000

NiMn-pinned spin valve films consisting of a layered glass/NiFe/Co/Cu/Co/NiFe/NiMn/Ta stack were made by do magnetron sputtering. After deposition, the structure was annealed in a series of cycles each including three hours at $220^\circ C, 2\times10^{-6}$ Torr, in a field of 350 Oe, to create an ordered antiferromagnetic structure in the NiMn layer and produce a strong unidirectional pinning field in the pinned magnetic layer, Optimum spin valve properties were obtained after seven annealing cycles, or 21 hours at $220^\circ C$, and were : MR ratio 1%, exchange coupling field 620 Oe, and coercivity of pinned layer 250 Oe. The exchange coupling field remained constant up to an operating temperature of $175^\circ C$, and the blocking temperature was about $380^\circ C$.