• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.301-301
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• 2010

In order to enhance the efficiency of the organic solar cells, the effects of plasma surface treatment with using $CF_4$ and $O_2$ gas on the anode ITO were studied. The polymer solar cell devices were fabricated on ITO glasses an active layer of P3HT (poly-3-hexylthiophene) and PCBM ([6,6]-phenyl C61-butyric acid methyl ester) mixture, without anode buffer layer, such as PEDOT:PSS layer. The metallic electrode was formed by thermally evaporated Al. Before the coating of organic layers, ITO surface was exposed to plasma made of $CF_4$ and $O_2$ gas, with/without heat treatment. In order to identify the effect the surface treatment, the current density and voltage characteristics were measured by solar simulator and the chemical composition of plasma treated ITO surface was analyzed by using X-ray photoelectron spectroscopy(XPS). In addition, the work function of the plasma treated ITO surface was measured by using ultraviolet photoelectron spectroscopy(UPS). The effects of plasma surface treatment can be attributed to the removal organic contaminants of the ITO surface, to the improvement of contact between ITO and buffer layer, and to the increase of work function of the ITO.

• 대한의용생체공학회:의공학회지
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• 제40권5호
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• pp.151-157
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• 2019

An acoustofluidic device using conductive liquid-based electrodes was developed for malaria parasite separation from white blood cells. In this device, the electrode channels filled with a conductive liquid were used to generate standing surface acoustic waves (SSAWs) in a fluidic channel, which can overcome the limitation of conventional patterned metal electrodes. Separation performance of the device was evaluated using fluorescent polystyrene particles with two different sizes (2 and $10{\mu}m$ diameters), which were successfully separated. In addition, a mixture of malaria parasites and white blood cells were also efficiently separated with high purity of ~98% in the CL-SSAW device at the flow rate of $12{\mu}l/min$.

• Corrosion Science and Technology
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• 제21권6호
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• pp.445-453
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• 2022

SiO_x was prepared from a mixture of Si and SiO₂ via high-energy ball milling as a negative electrode material for Li-ion batteries. The molar ratio of Si to SiO₂ as precursors and the milling time were varied to identify the synthetic condition that could exhibit desirable anode performances. With an appropriate milling time, the material showed a unique microstructure in which amorphous Si nanoparticles were intimately embedded within the SiO₂ matrix. The interface between the Si and SiO₂ was composed of silicon suboxides with Si oxidation states from 0 to +4 as proven by X-ray photoelectron spectroscopy and electrochemical analysis. With the addition of a conductive carbon (Super P carbon black) as a coating material, the SiO_x/C manifested superior specific capacity to a commercial SiO_x/C composite without compromising its cycle-life performance. The simple mechanochemical method described in this study will shed light on cost-effective synthesis of high-capacity silicon oxides as promising anode materials.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.93-93
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• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

• 자원리싸이클링
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• 제21권5호
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• pp.31-37
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• 2012

실리콘 웨이퍼공정에서 발생하는 실리콘 슬러지로부터 실리콘 및 탄화규소를 분리한 다음, 전해법으로 원소형태의 실리콘을 회수하는 연구를 수행하였다. 실리콘 슬러지의 주요 불순물은 절삭유, 금속불순물, 실리콘 및 실리콘 카바이드를 들 수 있다. 기계적 선별법으로 분리한 실리콘, 탄화실리콘 복합물을 $1000^{\circ}C$에 1시간동안 염화 배소하여 응축하고 회수한 사염화실리콘을 이온성액체인 $[Bmpy]Tf_2N$에 용해하여 전해액으로 사용하였다. 순환전위법으로부터 $[Bmpy]Tf_2N$의 안정한 전압구간과 사염화실리콘을 용해한 $[Bmpy]Tf_2N$ 전해액에서 실리콘의 환원으로 추정되는 환원피크를 얻을 수 있었다. 정전위법(-1.9 V vs. Pt-QRE)에서 1시간동안 금 전극 상에 전해한 다음, 전극표면을 XRD, SEM-EDS 및 XPS 분석을 통하여 실리콘이 원소형태로 전착되었음을 확인하였으며, 미량의 산소가 검출되는 것은 분석과정에서 시편이 공기 중에 노출되었기 때문으로 판단된다.

• 공업화학
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• 제27권6호
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• pp.653-658
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• 2016

본 연구에서는 1차원의 $MnO_2$ nanowire를 $KMnO_4$와 $MnSO_4$ 전구체 혼합물의 수열합성법(hydrothermal method)을 사용하여 제조할 수 있는 합성법을 개발하였다. 제조된 $MnO_2$ nanowire는 전기화학 반응 동안 전자와 이온전달을 용이하게 할 수 있는 넓은 비표면적과 기공구조를 나타내었다. MnO2 nanowire의 미세구조 및 화학구조를 주사형 전자현미경(SEM), 투과전자현미경(TEM), 광전자분석기(XPS), X-ray 회절분석법(XRD), 비표면적분석장비(BET)를 사용하여 분석하였다. 본 $MnO_2$ nanowire 전극의 전기화학적 특성은 순환전압전류법(cyclic voltammetry)과 정전류 충전-방전법(galvanostatic charge-discharge)을 사용하여 3상 전극 시스템(three-electrode system)에서 분석하였다. $MnO_2$ nanowire 전극은 높은 비정전용량(129 F/g), 고속 충방전(61% retention), 반 영구적인 수명특성(100%)을 나타내었다.

• 센서학회지
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• 제7권2호
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• pp.111-116
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• 1998

리튬 이온 전도체를 이용하여 히터가 내장된 단순한 형태의 고체전해질 이산화탄소 감지소자를 제작하였다. 소자의 기준전극과 감지전극은 Au를 사용하였다. type ( I )과 type (II)의 두가지 형태의 소자로 구분하여 제조하였다. type ( I ) 소자는 알카리 금속 탄산염을 $420{\sim}500^{\circ}C$에서 융착하여 제조하였다. Type (II) 소자의 감지막은 알카리 금속 탄산염을 결착제와 혼합한 후 감지전극에 도포하여 제조하였다. 제조된 이산화탄소 감지소자를 동작온도 $420^{\circ}C$에서 이산화탄소 농도 950 ppm에서 9,950 ppm의 영역에 걸쳐 응답특성을 조사하였다. type ( I ) 소자와 type (II) 소자는 이산화탄소 농도변화에 대하여 각각 62 mV/decade와 65 mV/decade의 감도를 보였다. Type (II) 소자의 기전력값의 변화는 동작온도 $420^{\circ}C$에서 Nernst 식의 이론적인 값에 거의 일치하였고, $15{\sim}20$초 이내의 빠른 응답시간을 가지면서 매우 안정한 응답특성을 보였다. 또한 type (II) 소자는 60일 동안 우수한 장기 안정도와 재현성을 보였다.

• 전기화학회지
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• 제7권4호
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• pp.173-178
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• 2004

플라즈마 화학 기상 증착법으로 구리 막$(foil,\;35{\mu}m)$표면 위에 $SiH_4$와 Ar혼합가스를 공급하여 실리콘 박막을 증착 한 후 리튬 이온전지의 음극으로 활용하였다. 증착 온도에 따라 비정질 실리콘 박막과 copper silicide박막 형태의 다른 두 종류의 실리콘 박막 구조가 형성되는 것이 관찰되었다. $200^{\circ}C$ 이하의 온도에서는 비정질 실리콘 박막이 증착되었고, $400^{\circ}C$ 이상의 온도에서는 실리콘 라디칼과 확산된 구리 이온의 반응에 의한 그래뉼러 형태의 copper silicide박막이 형성되었다. 비정질 실리콘 박막은 copper silicide박막 보다 높은 용량을 나타냈으나 충·방전 반응에 의한 급격한 용량 손실을 나타냈다. 이것은 비정질 실리콘 박막의 부피 팽창에 의한 것으로 추정된다. 그러나 copper silicide 박막을 음극으로 사용했을 때는 copper silicide를 형성한 실리콘과 구리의 화학결합이 막 구조의 부피변화를 감소 시켜줄 뿐 아니라 낮은 전기 저항을 갖기 때문에 싸이클 특성이 향상되었다.

• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.587-592
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• 2010

We have fabricated schottky barrier diode (SBDs) using polar (c-plane) and non polar (a-, m-plane) n-type 6H-SiC wafers. Ni/SiC ohmic contact was accomplished on the backside of the SiC wafers by thermal evaporation and annealed for 20minutes at $950^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The specific contact resistance was $3.6{\times}10^{-4}{\Omega}cm^2$ after annealing at $950^{\circ}C$. The XRD results of the alloyed contact layer show that formation of $NiSi_2$ layer might be responsible for the ohmic contact. The active rectifying electrode was formed by the same thermal evaporation of Ni thin film on topside of the SiC wafers and annealed for 5 minutes at $500^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The electrical properties of SBDs have been characterized by means of I-V and C-V curves. The forward voltage drop is about 0.95 V, 0.8 V and 0.8 V for c-, a- and m-plane SiC SBDs respectively. The ideality factor (${\eta}$) of all SBDs have been calculated from log(I)-V plot. The values of ideality factor were 1.46, 1.46 and 1.61 for c-, a- and m-plane SiC SBDs, respectively. The schottky barrier height (SBH) of all SBDs have been calculated from C-V curve. The values of SBH were 1.37 eV, 1.09 eV and 1.02 eV for c-, a- and m-plane SiC SBDs, respectively.

• 한국세라믹학회지
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• 제41권10호
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• pp.735-741
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• 2004

단순화한 연소법에 의해 합성한 $LiMn_{1.92}Co_{0.08}O_4$와 $LiNi_{0.7}Co_{0.3}O_2$의 혼합물의 전기화학적 성질을 알아보기 위하여, 30분 동안 milling하여 $LiMn_{1.92}Co_{0.08}O_4$-x wt$\%$ $LiNi_{0.7}Co_{0.3}O_2$ (x=9, 23, 33, 41, and 47) 조성의 혼합물을 제조하였다. x=9 조성의 전극이 비교적 큰 초기방전용량(109.9mAh/g at 0.1C)과 좋은 싸이클 성능을 가지고 있었다. 싸이클링에 따른 혼합물 전극의 방전용량 감소는 주로 $LiNi_{0.7}Co_{0.3}O_2$의 퇴화에 기인한다고 생각된다. $LiNi_{0.7}Co_{0.3}O_2$의 퇴화는 $LiMn_{1.92}Co_{0.08}O_4$로부터 용해된 Mn이 $LiNi_{0.7}Co_{0.3}O_2$ 입자를 둘러싸서(coating) 일어나는 것으로 판단된다.