• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권2호
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• pp.69-75
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• 1999

The characteristics of $H_2$ gas detection have been investigated using the Pt-MIS capacitor composed of the LPCVD nitride on the oxide. The flat band voltage shift is measured as 0.1 V in 1,000 ppm $H_2$ gas ambient and to be independent of Pt catalyst thickness. It is found that the flatband voltage shift is proportional to the hydrogen concentrations. The response and recovery time of Pt-MIS capacitor are 5 mins and 25 mins respectively. The samples of 30nm thick Pt revealed much higher sensitivity than that of 150nm samples. The samples of 150nm Pt showed that the flatband voltage shift of the device is due to the formation of the dipole layer of the adsorbed hydrogen atoms at the Pt-insulator interface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.333-335
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• 1997

This paper was performed to investigate the characteristic of the Pt-MIS(Metal Insulator Semiconductor) capacitor composed of the LPCVD nitride on the oxide for the hydrogen gas detection. Pt was used as catalytic metal for detecting the hydrogen gas and the flat band voltage shift was measured at various hydrogen concentration and catalytic metal thickness. We found the flat band voltage shift was proportional to the hydrogen concentration and catalytic metal thickness was little effect to the response time.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1264-1266
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• 1997

This paper reports the characteristic of tile MIS structure composed of the LPCVD nitride on the oxide for the hydrogen gas detection. Pt was used as catalytic metal for detecting the hydrogen gas and the flat band voltage shift was measured at various hydrogen concentration. We found the flat band voltage shift was proportional to the hydrogen concentration.

• 한국정보통신학회논문지
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• 제26권11호
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• pp.1747-1750
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• 2022

As shrinking the semiconductor process into the deep sub-micron to achieve high-density, low power and high performance integrated circuits, MBU (multiple bit upset) by soft errors is one of the major challenge of on-chip memory systems. To address the MBU, single error correction, double error detection and double adjacent error correction (SEC-DED-DAEC) codes have been recently proposed. But these codes do not resolve mis-correction. We propose the SEC-DED-DAEC-TAED(triple adjacent error detection) code without mis-corrections. The generated H-matrix by the proposed heuristic algorithm to accomplish the proposed code is implemented as hardware and verified. The results show that there is no mis-correction in the proposed codes and the 2-stage pipelined decoder can be employed on-chip memory system.

• 한국융합학회논문지
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• 제13권3호
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• pp.23-31
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• 2022

본 연구는 H해운사에서 제공받은 Starcool사의 실제 냉동 컨테이너 운영데이터를 분석하였다. H사의 현장 전문가와 인터뷰를 통해 4가지 고장 알람 중 Critical 및 Fatal Alarm만 고장으로 정의하였고, 냉동 컨테이너 특성상 모든 변수를 사용하는 것은 비용측면에서 비효율을 초래하는 것을 확인하였다. 이에 본 연구는 특성 중요도 및 PCA 기법을 통한 냉동 컨테이너 고장 탐지 방법을 제시한다. 모델의 성능 향상을 위해 XGBoost, LGBoost 등과 같은 트리계열 모델을 통해 변수 중요도(Feature Importance)를 기반으로 변수 선택(Feature selcetion)을 하고 선택되지 않은 변수는 PCA를 사용하여 전체 변수의 차원을 축소시켜 각 모델별로 지도학습을 수행한다. 부스팅 기반의 XGBoost, LGBoost 기법은 본 연구에서 제안하는 모델의 결과가 62개의 모든 변수를 사용한 지도 학습의 결과보다 재현율(Recall)이 각각 0.36, 0.39씩 향상되는 되는 결과를 보였다.

• 한국정보통신학회논문지
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• 제26권10호
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• pp.1559-1562
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• 2022

As electronic devices technology scales down into the deep-submicron to achieve high-density, low power and high performance integrated circuits, multiple bit upsets by soft errors have become a major threat to on-chip memory systems. To address the soft error problem, single error correction, double error detection and double adjacent error correction (SEC-DED-DAEC) codes have been recently proposed. But these codes do not troubleshoot mis-correction problem. We propose the SEC-DED_DAEC code with without mis-correction. The decoder for proposed code is implemented as hardware and verified. The results show that there is no mis-correction in the proposed codes and the decoder can be employed on-chip memory system.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.544-547
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• 2008

As the mobile electronic product is getting slimmer and smaller, the necessity of keypad is being increased. But the possibility of mis-typing keypad is increased rapidly due to the integrated keypad in the small mobile product. The business division has not considered the methodology of keypad design essentially. In this paper, analysis method and design evaluation standard to reduce the mis-typing of UMPC(Ultra Mobile Personal Computer) is suggested. First, the finite element analysis model and the biomechanical human body model are implemented in order to simulate the exact contact characteristic between finger and keypad. The reliability of analysis model is guaranteed by the comparison of the contact pressure between analysis result and experiment result of the pressure sensor. The design optimization of key shape and layout is derived through the response surface method. The prototype model is produced with the optimized design of keypad, and then it verified the advanced function with user mis-typing detection test. The optimized keypad design reduced the mis-typing ratio from 35% of existing model to 75 of proposed model. If this paper is widely applied to not only UMPC but also the other electronic products, the emotional quality of all products could be improved considerably.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.117.4-117
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• 1998

• 한국철도학회:학술대회논문집
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• 한국철도학회 2004년도 추계학술대회 논문집
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• pp.1303-1308
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• 2004

This paper proposes a reduction method for the mis-operation analysis of the DC High Speed Circuit Breaker(HSCB) in electric railway substation system. The analysis method is based on present condition of operation which is a method for accuracy level up. There is reason to operation of HSCB that it is mis-operation of fault detection relay(50F), operation of ground fault relay(64P), and trouble of electric car. A countermeasure is relay resetting through field test, induction of GTOCB(Gate Turn Off Thyristor Circuit Breaker), HSVCB(High Speed Vacuum Circuit Breaker), coordination with electric car. The results presented in the paper can be used as a reference for maintenance free in electric railway substation system.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.809-813
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• 2016

We investigated a SiC-based hydrogen gas sensor with MIS (metal-insulator-semiconductor) structure for high temperature applications. The sensor was fabricated by $Pd/TiO_2/SiC$ structure, and a thin titanium dioxide ($TiO_2$) layer was exploited for sensitivity improvement. In the experiment, dependences of I-V characteristics and capacitance response properties on hydrogen gas concentrations from 0 to 2,000 ppm were analyzed at room temperature to $400^{\circ}C$. As the result, our sensor using $TiO_2$ dielectric layer showed possibilities with regard to use in hydrogen gas sensors for high-temperature applications.