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http://dx.doi.org/10.4313/JKEM.2016.29.12.809

Hydrogen Detection of Titanium Dioxide Layer Formed by Reactive Sputtering on SiC Substrates  

Kim, Seong-Jeen (Department of Electronic Engineering, Kyungnam University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.29, no.12, 2016 , pp. 809-813 More about this Journal
Abstract
We investigated a SiC-based hydrogen gas sensor with MIS (metal-insulator-semiconductor) structure for high temperature applications. The sensor was fabricated by $Pd/TiO_2/SiC$ structure, and a thin titanium dioxide ($TiO_2$) layer was exploited for sensitivity improvement. In the experiment, dependences of I-V characteristics and capacitance response properties on hydrogen gas concentrations from 0 to 2,000 ppm were analyzed at room temperature to $400^{\circ}C$. As the result, our sensor using $TiO_2$ dielectric layer showed possibilities with regard to use in hydrogen gas sensors for high-temperature applications.
Keywords
SiC; Hydrogen sensor; Capacitive; MIS structure; $TiO_2$;
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