References
- 電氣協同硏究 v.36 no.1 油中かス分析による油入機器補修管理 電氣協同硏究會
- ガス協會誌 v.44 no.10 變壓器 油中水素檢出裝置 日本ガス協會
- IEEE Electron Devices Lett. v.EDL-5 No blister formation Pd/Pt double metal gate MISFET hydrogen sensors Y.S. Choi;K. Takahashi;T. Matsuo
- Sensors and Actuators v.1 Methods of ISFET fabrication T.Matsuo;M.Esashi
- Anal. Chem. v.58 Determination of creatnine by an ammonia sensitive semiconductor structure and immobilized enzymes F.Winquist;I.Lundstroem;B. Danielsson
- Influence of the gate insulator on gas measurements with suspended gate FET's P.Topart(et al.)
- Applied Physics Letters v.41 no.7 Palladium and platinum gate metal-oxide semiconductor capacitors in hydrogen and oxygen mixture M. Armgarth(et al.)
- J. Applied. Phys. v.64 no.3 Hydrogen and ammonia response of metal-silicon dioxide-silicon structures with thin platinum gates A. Spetz(et al.)
- J. Applied. Phys. v.47 no.6 Hydrogen-sensitive palladium gate MOS capacitors M.C. Steele(et al.)
- IEEE Trans. Electron Devices v.ED-29 no.1 Transition Metal-Gate MOS Gaseous Detectors T. L. Poteat(et al.)
- Appl. Phys.Lett. v.42 Pd/a-Si:H metal-insulator-semiconductor Schottky barrier diode for hydrogen detection D'Amico(et al.)
- Solid State Surface Science v.1 J.Horiuti;T. Toya;M.Green(ed.)
- Solid-State Electronics v.13 A Quasi-Static Technique for MOS C-V and Surface State Measurements M. Kuhn(et al.)
- J. Applied. Phys. v.64 no.3 Hydrogen and ammonia response of metal-silicon dioxide-silicon structures with thin platinum gates A. Spetz(et al.)