• 전기학회논문지
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• 제60권5호
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• pp.993-998
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• 2011

In this paper we suggest new criteria for the classification of the electrode gap between common and scan electrodes. The electrode gap is categorized as a short, middle, and long gap according to the criteria. Among these structures, we focus on the erase waveform of a mid-gap structure. we report an unstable discharge arising from the erase ramp period in a mid-gap structure. Based on the Vt close curve, we analyze the unstable discharge at various conditions. Our analysis reveals that the unstable discharge is ignited between surface electrodes and caused by un-erased wall charges accumulated on the outer edges of electrodes. By reducing the voltage level of the last sustain pulse, the problem is solved.

• 전기학회논문지
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• 제58권5호
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• pp.982-988
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• 2009

In a surface type ac PDP having $200{\mu}m$ gap between the surface electrodes, the luminous efficacy has a reciprocal dependence on the sustaining frequency. The discharge current flowing to the address electrodes are measured to investigate the phenomena and spectral intensity from visible light to infra red is measured to verify phosphor saturation with the frequency. Experiments show the discharge between the address and surface electrodes deteriorates the efficacy in high sustaining frequencies. Pulse width modulation is introduced to improve the efficacy. In optimum conditions, we obtained 1.99lm/w and 1.79lm/w at 200kHz and 250kHz, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.93-93
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• 2007

We present a mechanism for stress-induced interface degrdadations through ab initio pseudopotential calculations. We find that N interstitials at the interface create various defects levels in the Si band gap, which range from the mid gap to the conduction band of Si. The level positions are dependent on the configuration of oxygen toms around the N interstitial. On the other hand, the mid-gap level caused by Pb center is possibly removed by substitution of a N atom for a threefold-coordinated Si atom in the defect. Our calculations explain why interface state generations are enhanced in Si oxynitride, especially near conduction band edge of Si, although densities of Pb center are reduced.

• 대한수학회지
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• 제43권3호
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• pp.579-591
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• 2006

In this paper we obtain a sufficient and necessary condition for an analytic function f on the unit ball B with Hadamard gaps, that is, for $f(z)\;=\;{\sum}^{\infty}_{k=1}\;P_{nk}(z)$ (the homogeneous polynomial expansion of f) satisfying $n_{k+1}/n_{k}{\ge}{\lambda}>1$ for all $k\;{\in}\;N$, to belong to the weighted Bergman space $$A^p_{\alpha}(B)\;=\;\{f{\mid}{\int}_{B}{\mid}f(z){\mid}^{p}(1-{\mid}z{\mid}^2)^{\alpha}dV(z) < {\infty},\;f{\in}H(B)\}$$. We find a growth estimate for the integral mean $$\({\int}_{{\partial}B}{\mid}f(r{\zeta}){\mid}^pd{\sigma}({\zeta})\)^{1/p}$$, and an estimate for the point evaluations in this class of functions. Similar results on the mixed norm space $H_{p,q,{\alpha}$(B) and weighted Bergman space on polydisc $A^p_{^{\to}_{\alpha}}(U^n)$ are also given.

• Journal of applied mathematics & informatics
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• 제20권1_2호
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• pp.75-96
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• 2006

Let m, n be positive integers. We denote by R(m,n) (respectively P(m,n)) the class of all groups G such that, for every n subsets $X_1,X_2\ldots,X_n$, of size m of G there exits a non-identity permutation $\sigma$ such that $X_1X_2{\cdots}X_n{\cap}X_{\sigma(1)}X_{/sigma(2)}{\cdots}X_{/sigma(n)}\neq\phi$ (respectively $X_1X_2{\cdots}X_n=X_{/sigma(1)}X_{\sigma(2)}{\cdots}X_{\sigma(n)}$). Let G be a non-abelian group. In this paper we prove that (i) $G{\in}P$(2,3) if and only if G isomorphic to $S_3$, where $S_n$ is the symmetric group on n letters. (ii) $G{\in}R$(2, 2) if and only if ${\mid}G{\mid}\geq8$. (iii) If G is finite, then $G{\in}R$(3, 2) if and only if ${\mid}G{\mid}\geq14$ or G is isomorphic to one of the following: SmallGroup(16, i), $i\in$ {3, 4, 6, 11, 12, 13}, SmallGroup(32, 49), SmallGroup(32, 50), where SmallGroup(m, n) is the nth group of order m in the GAP [13] library.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1992년도 한국자동제어학술회의논문집(국제학술편); KOEX, Seoul; 19-21 Oct. 1992
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• pp.29-29
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• 1992

Interest in process control has rebounded from an all-time low in the mid-1970s, with a new focus on bridging the gap between academic theory and industrial practice. Since then, much progress has been made in the new generation of process control theory to bridge this gap. This review summarizes the recent advances and cur-rent problems in process control on a qualitative level.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 Techno-Fair 및 합동춘계학술대회 논문집 전기물성,응용부문
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• pp.147-148
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• 2008

In this paper, we calculated the axial magnetic field at mid-gap plane between upper and lower electrode in vacuum interrupter by means of commercial finite element method Maxwell 3D and compared on the basis of "effective area" criterion. The models used in this paper are coil type(axial magnetic field) vacuum interrupter electrodes which have different numbers of coil segment. We used Dr. Schulmann's experimental equation which indicates minimum critical value of axial magnetic field to diffuse arc.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2005년도 춘계학술대회 논문집
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• pp.483-486
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• 2005

In order to study the effect of strain states on the formation of shear textures during rolling in fcc metals, the evolution of textures was simulated by the full constrain model using various ideal strain states. Considering rolling as a two-dimensional problem, i.e., $\varepsilon_{22}\;=\;\varepsilon_{12}\;=\;\varepsilon_{23}\;=\;0$, the deviation from the plane-strain state manifest itself as nonzero contribution of $\varepsilon_{13}$. With increasing variations of $\varepsilon_{13}$, shear textures develop. The sign of ell hardly affects the evolution of textures. The texture simulation with various idealized strain states indicates that the ratio $\mid\varepsilon_{13}\mid/\mid\varepsilon_{11}\mid$ in each time interval in a roll gap plays a dominant role in the evolution of textures during rolling.

• 한국재료학회지
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• 제29권8호
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• pp.463-468
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• 2019

The electrical and interfacial properties of $HfO_2/Al_2O_3$ and $Al_2O_3/HfO_2$ dielectrics on AlN/p-Ge interface prepared by thermal atomic layer deposition are investigated by capacitance-voltage(C-V) and current-voltage(I-V) measurements. In the C-V measurements, humps related to mid-gap states are observed when the ac frequency is below 100 kHz, revealing lower mid-gap states for the $HfO_2/Al_2O_3$ sample. Higher frequency dispersion in the inversion region is observed for the $Al_2O_3/HfO_2$ sample, indicating the presence of slow interface states A higher interface trap density calculated from the high-low frequency method is observed for the $Al_2O_3/HfO_2$ sample. The parallel conductance method, applied to the accumulation region, shows border traps at 0.3~0.32 eV for the $Al_2O_3/HfO_2$ sample, which are not observed for the $Al_2O_3/HfO_2$ sample. I-V measurements show a reduction of leakage current of about three orders of magnitude for the $HfO_2/Al_2O_3$ sample. Using the Fowler-Nordheim emission, the barrier height is calculated and found to be about 1.08 eV for the $HfO_2/Al_2O_3$ sample. Based on these results, it is suggested that $HfO_2/Al_2O_3$ is a better dielectric stack than $Al_2O_3/HfO_2$ on AlN/p-Ge interface.

• 한국통신학회논문지
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• 제14권1호
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• pp.75-83
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• 1989

본 논문에서는 복사면 가장자리가 결합된 두 구형 마이크로스트립안테나에, 패치 사이의 복사면 가장자리의 결합을 특성화하는 REC 모델을 적용하여 여러가지 결합간격에 대해 산란계수 $\mid$ $S_{11}$ $\mid$과 $\mid$ $S_{12}$ $\mid$를 구하였으며, 이를 실험치와 비교하였다. 그리고 복사면 가장자리에서의 결합을 이용한 기생소자를 갖는 구형 마이크로스트립 안테나에, REC 모델을 적용하여 궤환 손실을 구한 뒤 실험치와 비교하였다. 여기서 각각의 안테나는 50$\Omega$ 마이크로스트립 선로에 의해 급전한 결과를 다루었으며, 이는 REC 모델을 이론적으로 제시하여 동축선로로 급전한 결과$^{(10)}$와 비교하기 위한 논문이다.