• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.165-169
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• 2004

Microwave dielectric properties and the behavior of low-temperature sintering of $Zn_{1-x}(Li_{1/2}La_{1/2})_xTiO_3$ ($0.01{\leq}x{\leq}0.05$) with 4 wt% $H_3BO_3$ were investigated as a function of $(Li_{1/2}La_{1/2})^{2+}$ content. The sintering temperature of the specimens can be reduced from $1150^{\circ}C$ to $875^{\circ}C$ with the addition of 4 wt% $H_3BO_3$ as a sintering agent. Dielectric constant (K) and Temperature Coefficient of resonant Frequency (TCF) with the substitution of ($(Li_{1/2}La_{1/2})^{2+}$ ion depended on dielectric mixing rule. Quality factor (Qf) depended on density and microstructure. Typically, K of 26.5, Qf of 19,030 GHz and TCF of 7.5 ppm$/^{\circ}C$ were obtained for the specimens with x=0.03 sintered at $875^{\circ}C$ for 3 h.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.142-142
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• 2009

Bismuth-substituted yttrium iron garnet(Bi-YIG; $Bi_xY_{3-x}Fe_5O_{12}$, x=0, 0.5, 1.0, 1.5, 2.0) thin films were fabricated on glass substrates using a metal organic decomposition (MOD) method. The dielectric property was measured by NSMM(Near-field scanning microwave microscopy) system that operating frequency is 4 Ghz. The obtained reflection coefficient $S_{11}$ of the Bi:YIG thin films with different bismuth concentration was increased as the bismuth concentration increased due to the lattice mismatch and vacancy of ions because of a lager ionic radius of bismuth ion than yttrium ion.

• Korean Journal of Crystallography
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• v.11 no.4
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• pp.191-194
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• 2000

Bi/sub 12/SiO/sub 20/, Bi/sub 12/GeO/sub 20/ and Bi/sub 12/O/sub 20/ compounds with the sillenite crystal structure were synthesized and sintered into the dense ceramic bodies. An analyses of the microwave dielectric properties of the Si, Ge and Ti sillenites showed a permittivity (e) of ∼40 and a negative temperature coefficient of the resonant frequency for all analogues (from -20 to -40 ppm/K). The Qxf value of the Si and Ge sillenites was measured to be ∼8.000 GHz. The Ti analogue shows a significantly lower Qxf value(∼2.500 GHz) and is sensitive to the heat-treatment conditions. By increasing the sintering temperature the size of the grains increases, which correlates with an increase in the Qxf value.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.6
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• pp.261-267
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• 2023

Crystal structure, microstructure, and dielectric properties of the (Ca, Sr)(Zr, Ti)O₃ (CSZT) system has been studied as a function of sintering temperature and MgO addition for microwave applications. A single-phase CSZT powder with the orthorhombic crystal structure was obtained by the solid-state reaction method. The powder compacts were sintered at 1200℃, 1300℃, and 1400℃ respectively. All the sintered samples had a single-phase orthorhombic crystal structure and grain size increased with sintering temperature. In the case of 1 mol% MgO addition, the orthorhombic crystal structure was the main phase; however, a secondary phase appeared during sintering at 1400℃, as determined by EDS analysis. At 1400℃, the undoped and MgO-doped CSZT had almost similar grain size distribution and densification but the grain size distribution became slightly narrow. The MgO-doped CSZT showed excellent low-loss dielectric properties: ε_r = 34.14, tanδ = 0.00047, τ_ε = -3.58 ppm/℃ at 1 MHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.838-841
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• 2004

[ $B_2O_3$ ] added $Ba(Mg_{1/3}Nb_{2/3})O_3$ (BBMN) ceramics were not sintered below $900^{\circ}C$. However, when CuO was added to the BBMN ceramic, it was sintered even at $850^{\circ}C$. The amount of the $Ba_2B_2O_5$ second phase decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the $B_2O_3$ inhibiting the reaction between $B_2O_3$ and BaO. Moreover, it is suggested that the solid solution of CuO and $B_2O_3$ might be responsible for the decrease of the sintering temperature of the specimens. A dense microstructure without pores was developed with the addition of a small amount of CuO. However, a porous microstructure with large pores was formed when a large amount of CuO was added. The bulk density the dielectric constant $({\varepsilon}_r)$ and the Q-value increased with the addition of CuO but they decreased when a large amount of CuO was added. The variations of those properties are closely related to the variation of the microstructure. The excellent microwave dielectric properties of Qxf=21500 GHz, ${\varepsilon}_r=31$ and temperature coefficient of resonance frequency$({\tau}_f)=21.3\;ppm/^{\circ}C$ were obtained for the $Ba(Mg_{1/3}Nb_{2/3})O_3+2.0\;mol%B_2O_3+10.0$ mol%CuO ceramic sintered at $875^{\circ}C$ for 2h.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.284-284
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• 2007

In this study, the microwave dielectric property variations of (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites (x=0.3, 0.5 and 0.7) with 10wt% zinc borosilicate(ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying thes system to LTCC technology. The all composition addition of 10wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, a small amount of $Bi_2SiO_5$ as the secondary phase was observed in the all composition. The substitution of $ZnNb_2O_6$ on the $BiNbO_4$ composites increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the high sintering temperature and low dielectric constant of $ZnNb_2O_6\;than\;BiNbO_4$ ceramics. The increasing of $ZnNb_2O_6$ content from 0.3 to 0.7 in the (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites with 10wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 28.1~15.6 in the dielectric constant$({\varepsilon}_r)$, 5,500~8,700GHz in the $Q{\times}f$ value.

• Composites Research
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• v.24 no.2
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• pp.38-45
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• 2011

In this paper, we present an optimization method for the single Dallenbach-layer type microwave absorbers composed of E-glass fabric/epoxy composite laminates. The composite prepreg containing carbon nanotubes (CNT) was used to control the electrical property of the composites laminates. The design technology using the genetic algorithm was used to get the optimal thicknesses of the laminates and the filler contents at various center frequencies, for which the numerical model of the complex permittivity of the composite laminate was incorporated. In the optimal design results, the content of CNT increased in proportion to the center frequency, but, on the contrary, the thickness of the microwave absorbers decreased. The permittivity and reflection loss are measured using vector network analyzer and 7 mm coaxial airline. The influence of the mismatches in between measurement and prediction of the thickness and the complex permittivity caused the shift of the center frequency, blunting of the peak at the center frequency and the reduction of the absorbing bandwidth.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.8
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• pp.857-863
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• 2014

In determining interaction between plasma and electromagnetic wave, plasma frequency and collision frequency are two key parameters. They are derived from electron density and temperature, which vary in an extremely wide range, depending on a plasma generator. Because the parameters are usually unknown, traditional researches have utilized simplified electron density model and constant electron temperature approximation. Introduction of plasma fluid model to electromagnetics is suggested to utilize relatively precise time dependent variables for given generator. Dielectric barrier discharge(DBD) generator is selected due to its simple geometry which allows us to use one dimensional analysis. Time dependent property is analyzed when microwave is launched toward parallel plate DBD plasma. Afterwards, attenuation tendency with the change of electron density and temperature is demonstrated.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.8
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• pp.1068-1074
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• 1995

Effect of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ addition on the phase changes and microwave dielectric properties of BaTi $O_{3}$-3Ti $O_{2}$ ceramics were investigated. Addition of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ to BaTi $O_{3}$-3Ti $O_{2}$ resulted in the formation of Ba $Ti_{4}$$O_{9}$, $Ba_{2}$ $Ti_{9}$ $O_{20}$, Ba(Zn$_{1}$3/Nb$_{2}$3/) $O_{3}$, and Ti $O_{2}$ phases. Ba $Ti_{4}$$O_{9}$ phase was gradually transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$. This was identified by XRD and microstructure. As the Ba $Ti_{4}$$O_{9}$ phase transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$ phase, the dielectric constant increased to 37.5. Q*f$_{o}$ value was 40000 at x=0.04, and the temperature coefficient of resonant frequency was +10ppm/.deg. C.C.. C.C.

• Journal of Soil and Groundwater Environment
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• v.9 no.1
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• pp.39-46
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• 2004

Removal efficiencies for diesel fuel and diesel hydrocarbons ($C_10$∼$C_22$) using microwave-enhanced SVE process were evaluated with dry and moist soil, respectively. Diesel removal rates of microwave-enhanced SVE process were 7 times for dry soil and 1580 times for moist soil as great as those of the SVE process without microwave heating. High dielectric property of water contents may accelerate the absorption of microwave energy into soil and thus vaporized the diesel fuel components drastically. The diesel removals were 67.7∼78.4% for $C_10$ and $C_12$, and 0∼18.5% for $C_14$∼$C_22$ for dry and moist soil with SVE process only. On the other hand, dry soil with microwave-enhanced SVE process showed 89.3∼99.4% removal for $C_10$ to and $C_12$ and 35.6∼67.0% for hydrocarbons over $C_14$. All hydrocarbons ($C_10$∼$C_22$) studied were significantly removed (93.6∼99.8%) for moist soil with microwave-enhanced SVE process.