Korean Journal of Crystallography (한국결정학회지)
- Volume 11 Issue 4
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- Pages.191-194
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- 2000
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- 1229-8700(pISSN)
Microstructure vs. Dielectric Property Correlation in the Stoichiometric Sillenites
- Valant, Matjaz (″Jozef Stefan″ Institute) ;
- Suvorov, Danilo (″Jozef Stefan″ Institute)
- Published : 2000.12.01
Abstract
Bi/sub 12/SiO/sub 20/, Bi/sub 12/GeO/sub 20/ and Bi/sub 12/O/sub 20/ compounds with the sillenite crystal structure were synthesized and sintered into the dense ceramic bodies. An analyses of the microwave dielectric properties of the Si, Ge and Ti sillenites showed a permittivity (e) of ∼40 and a negative temperature coefficient of the resonant frequency for all analogues (from -20 to -40 ppm/K). The Qxf value of the Si and Ge sillenites was measured to be ∼8.000 GHz. The Ti analogue shows a significantly lower Qxf value(∼2.500 GHz) and is sensitive to the heat-treatment conditions. By increasing the sintering temperature the size of the grains increases, which correlates with an increase in the Qxf value.
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