• Title/Summary/Keyword: Microsystem

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A High-performance X/Y-axis Microaccelerometer Fabricated on SOI Wafer without Footing Using the Sacrificial Bulk Micromachining (SBM) Process

  • Ko, Hyoung-Ho;Kim, Jong-Pal;Park, Sang-Jun;Kwak, Dong-Hun;Song, Tae-Yong;Setaidi, Dadi;Carr, William;Buss, James;Dan Cho, Dong-Il
    • 제어로봇시스템학회:학술대회논문집
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    • 2003.10a
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    • pp.2187-2191
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    • 2003
  • In this paper, a x/y-axis accelerometer is fabricated, using the SBM process on a <111> SOI wafer. This fabrication method solves the problem of the footing phenomenon in the conventional SOI process for improved manufacturability and performance. The roughened lower parts as well as the loose silicon fragments due to the footing phenomenon are removed by the alkaline lateral etching step of the SBM process. The fabricated accelerometer has a demodulated signal-to-noise ratio of 92 dB, when 40Hz, 5 g input acceleration is applied. The noise equivalent input acceleration resolution and bandwidth are $125.59\;{\mu}g$ and over 100 Hz, respectively. The acceleration random walk is $12.5\;{\mu}g/\sqrt{Hz}$. The output linearity is measured to be 1.2 % FSO(Full Scale Output) at 40 Hz, and the input range is over ${\pm}\;10g$.

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Thermo-Piezoelectric Read/Write Mechanisms for Probe-Based Data Storage

  • Nam, Hyo-Jin;Kim, Young-Sik;Lee, Sun-Yong;Jin, Won-Hyeog;Jang, Seong-Soo;Cho, Il-Joo;Bu, Jong-Uk
    • Transactions of the Society of Information Storage Systems
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    • v.3 no.1
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    • pp.47-53
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    • 2007
  • In this paper, a thermo-piezoelectric mechanism with integrated heaters and piezoelectric sensors has been studied for low power probe-based data storage. Silicon nitride cantilever integrated with silicon heater and piezoelectric sensor has been developed to improve the uniformity of cantilevers. Data bits of 40 nm in diameter were recorded on PMMA film. The sensitivity of the piezoelectric sensor was 0.615 fC/nm after poling the PZT layer. And, the $34\times34$ probe array integrated with CMOS circuits has been successfully developed by simple one-step bonding process. The process can simplify the process step and reduce tip wear using silicon nitride tip.

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A Bio-Inspired Cell-Microsystem to Manipulate and Detect Living Cells

  • Lim, Jung-Min;Byun, Sang-Won;Park, Tai-Hyun;Seo, Jong-Mo;Yoo, Young-Suk;Hum Chung;Dong-il
    • KIEE International Transactions on Electrophysics and Applications
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    • v.4C no.4
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    • pp.160-164
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    • 2004
  • In this study, we demonstrate for the first time a bio-inspired Cell-Microsystem to manipulate and detect living cells. Cultured retinal pigment epithelial cell line (ARPE-19) was directed to grow in a pre-defined Cell-Microsystem. The three-dimensional micropillars of 5 ${\mu}{\textrm}{m}$ in height and diameter of the Cell-Microsystem were fabricated. Inhibited DNA synthesis and transformed cell morphology were observed throughout the culture period. The demonstration of manipulating and detecting living cells by the surface topography is a new approach, and it will be very useful for the future design of cell-based biosensors and bioactuators.

Characteristics of Surface Micromachined Pyroelectric Infrared Ray Focal Plane Array

  • Ryu, Sang-Ouk;Cho, Seong-Mok;Choi, Kyu-Jeong;Yoon, Sung-Min;Lee, Nam-Yeal;Yu, Byoung-Gon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.1
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    • pp.45-51
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    • 2005
  • We have developed surface micromachined Infrared ray (IR) focal plane array (FPA), in which single $SiO_{2}$ layer works as an IR absorbing plate and $Pb(Zr_{0.3}Ti_{0.7})O_{2}$ thin film served as a thermally sensitive material. There are some advantages of applying $SiO_{2}$ layer as an IR absorbing layer. First of all, the $SiO_{2}$ has good IR absorbance within $8{\sim}12{\mu}m$ spectrum range. Measured value showed about 60% absorbance of incident IR spectrum in the range. $SiO_{2}$ layer has another important merit when applied to the top of Pt/PZT/Pt stack because it works also as a supporting membrane. Consequently, the IR absorbing layer forms one body with membrane structure, which simplifies the whole MEMS process and gives robustness Ito the structure.

Implementation Issues in Brain Implantable Neural Interface Microsystem (뇌 삽입형 신경 접속 마이크로 시스템의 구현상 이슈)

  • Song, Yoon-Kyu
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.4
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    • pp.229-235
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    • 2013
  • In this paper, we investigate several important issues on the implementation of a totally implantable microsystem for brain-machine interface that has been attracting a lot of attention recently. So far most of the scientific research has been focused on the high performance, low power electronics or systems such as neural signal amplifiers and wireless signal transmitters, but the real application of the implantable microsystem is affected significantly by a number of factors, ranging from design of the encapsulation structure to physiological and anatomical characteristics of the brain. In this work, we discuss on the thermal effect of the system, the detecting volume of the neural probes, wireless data transmission and power delivery, and physiological and anatomical factors that are critically important for the actual implementation of a totally brain implantable neural interface microsystem.

Piezoelectric PZT Cantilever Array Integrated with Piezoresistor for High Speed Operation and Calibration of Atomic Force Microscopy

  • Nam, Hyo-Jin;Kim, Young-Sik;Cho, Seong-Moon;Lee, Caroline-Sunyong;Bu, Jong-Uk;Hong, Jae-Wan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.4
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    • pp.246-252
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    • 2002
  • Two kinds of PZT cantilevers integrated with a piezoresistor have been newly designed, fabricated, and characterized for high speed AFM. In first cantilever, a piezoresistor is used to sense atomic force acting on tip, while in second cantilever, a piezoresistor is integrated to calibrate hysteresis and creep phenomena of the PZT cantilever. The fabricated PZT cantilevers provide high tip displacement of $0.55\mu\textrm{m}/V$ and high resonant frequency of 73 KHz. A new cantilever structure has been designed to prevent electrical coupling between sensor and PZT actuator and the proposed cantilever shows 5 times lower coupling voltage than that of the previous cantilever. The fabricated PZT cantilever shows a crisp scanned image at 1mm/sec, while the conventional piezo-tube scanner shows blurred image even at $180\mu\textrm{m}/sec$. The non-linear properties of the PZT actuator are also well calibrated using the piezoresistive sensor for calibration.

Novel K/Ka Bandpass Filters using LIGA Micromachined Process

  • Park, K. Y.;Park, J. Y.;Choi, H. K.;Lee, J.C.;Lee, B.;Kim, J. H.;Kim, N. Y.;Park, J. Y.;Kim, G. H.;Kim, D. W.;Bu, J. U.;Chung, K. W.
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.6
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    • pp.969-975
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    • 2000
  • New class of three dimensional (3-D) micromachined microwave planar filters at K and Ka-band are presented using LIGA micro-machined process. The K-and Ka-band filters show wide bandpass characteristics of~36% and ~39% with the insertion loss 1.26dB at 19.11GHz and 1.7dB at GHz, respectively. These filters can be applicable in high power MMIC of MIMIC.

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Multilayered High-directional Waveguide Grating Antenna Based on Interleaved Etching for Optical Phased Arrays

  • Yang Bo;Qing Wang;Jinyu Wang;Yan, Cai;Wencheng Yue;Shuxiao Wang;Wei Wang;Mingbin Yu
    • Current Optics and Photonics
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    • v.7 no.2
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    • pp.157-165
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    • 2023
  • We propose a highly directional waveguide grating antenna for an optical phased array, achieving high directionality of more than 97% by interleaving the trenches with different etching depths in the silicon nitride layer, and adopting a multilayered structure. Meanwhile, the multilayered structure reduces the perturbation strength, which enables a centimeter-scale radiation length. The beam-steering range is 13.2°, with a wavelength bandwidth of 100 nm. The 1-dB bandwidth of the grating is 305 nm. The multilayered grating structure has a large tolerance to the fabrication variation and is compatible with CMOS fabrication techniques.

Fabrication of 3D Feed Horn IR Antenna for IR Detector

  • Kim, Kun-Tae;Han, Yong-Hee;Shin, Hyun-Joon;Sung Moon;Park, Jung-Ho
    • KIEE International Transactions on Electrophysics and Applications
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    • v.4C no.4
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    • pp.170-175
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    • 2004
  • A three dimensional feed horn 10${\mu}{\textrm}{m}$ wavelength infrared antenna has been suggested, fabricated and characterized. It was applied to an infrared detector for efficient collecting of IR radiation and for reducing background noise. The horn antenna size was designed for maximum antenna directivity. The 3D feed horn antenna mold was fabricated using rotating and tilted illumination while the antenna plate was constructed by way of electroplating. Antenna characteristics were measured by coupling with a microbolometer. Measurement results indicated that the directivity of the antenna is 16.1㏈ and the background noise is reduced by approximately two times.