• Title/Summary/Keyword: Microsensor

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PDMS/Glass Serpentine Microchannel Chip for PCR with Bubble Suppression in Sample Injection (시료주입시 기포발생이 억제된 반응조 형태의 중합효소연쇄반응용 PDMS/유리 바이오칩)

  • Cho Chul-Ho;Cho Woong;Hwang Seung-Yong;Ahn Yoo-Min
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.30 no.10 s.253
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    • pp.1261-1268
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    • 2006
  • This paper reports low-cost microreactor $(10{\mu}{\ell})$ biochip for the DNA PCR (polymerase chain reaction). The microbiochip $(20mm{\times}28mm)$ is a hybrid type which is composed of PDMS (polydimethylsiloxane) layer with serpentine micochannel $(360{\mu}m{\times}100{\mu}m)$ chamber and glass substrate integrated with microheater and thermal microsensor. Undesirable bubble is usually created during sample loading to PMDS-based microchip because of hydrophobic chip surface. Created bubbles interrupt stable biochemical reaction. We designed improved microreactor chamber using microfluidic simulation. The designed reactor has a coner-rounded serpentine channel architecture, which enables stable injection into hydrophobic surface using micropipette only. Reactor temperature needed to PCR reaction is controlled within ${\pm}0.5^{\circ}C$ by PID controller of LabVIEW software. It is experimentally confirmed that SRY gene PCR by the fabricated microreactor chip is performed for less than 54 min.

Fabrications of Pd/poly 3C-SiC schottky diodes for hydrogen gas sensor at high temperatures (고온 가스센서용 Pd-다결정 3C-SiC 쇼트키 다이오드 제작)

  • Ahn, Jeong-Hak;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.78-79
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    • 2008
  • In this paper, poly 3C-SiC thin films were grown on $SiO_2$/Si by atmospheric pressure chemical vapor deposition (APCVD) using HMDS, $H_2$, and Ar gas at $1100^{\circ}C$ for 30 min, respectively. And then, palladium films were deposited on poly 3C-SiC by RF magnetron sputter. Thickness, uniformity, and quality of these samples were performed by SEM. Crystallinity and preferred orientationsof palladium were analyzed by XRD. And Pd/poly 3C-SiC schottky diodes were fabricated and characterized by current-voltage measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$, 0.58 eV, respectively. And these devices operated about $350^{\circ}C$. From results, Pd/poly 3C-SiC devices are promising for high temperature hydrogen sensor and applications.

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Quantification of Skin Moisture in Hairless Mouse by using a Portable NIR System and a FT NIR Spectrometer (Photo Diode Array형의 휴대용 근적외 분광기와 FT 근적외 분광기를 이용한 Hairless Mouse 피부 수분 정량)

  • Suh, Eun-Jung;Woo, Young-Ah;Kim, Hyo-Jin
    • YAKHAK HOEJI
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    • v.49 no.2
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    • pp.115-121
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    • 2005
  • In this study, the performance of a portable NIR system and a FT NIR spectrometer were compared to determine water content of hairless mouse skin. The stratum corneum parts wer e separated from the epidermal tissues by trypsin solution. NIR diffuse reflectance spectra of hairless mouse skin were acquired using a fiber optic probe. In the near infrared, water molecules show two clear absorption bands at 1450 nm from first overtone of O-H stretching and 1940 nm from the combination involving O-H stretching and O-H deformation. It was found that the variations of O-H absorption band according to water content. Partial least squares regression (PLSR) was applied to develop a calibration model. The PLS model showed a good correlation between NIR predicted value and the absolute water content of separated hairless mouse skin, in vitro. For both the portable and the FT NIR spectrometer, These studies showed the possibility of a rapid and nondestructive skin moisture measurement using NIR spectroscopy. The portable NIR spectrometer with a photodiode arrays-microsensor could be more rapidly applied for the determination of water content with comparable accuracy with the performance of a FT spectrometer .

Depositions of Pd thin films on poly-crystalline 3C-SiC buffer layers for microsensors (다결정 3C-SiC 완충층위에 마이크로 센서용 Pd 박막 증착)

  • Ahn, Jeong-Hak;Chung, Jae-Min;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.175-176
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    • 2007
  • This paper describes on the characteristics of Pd thin films deposited on poly-crystalline 3C-SiC buffer layers for microsensors, in which the poly 3C-SiC was grown on Si, $SiO_2$, and AlN substrates, respectively, by APCVD using HMDS, $H_2$, and Ar gas at $1100^{\circ}C$ for 30 min. In this work, a Pd thin film was deposited on the poly 3C-SiC film by RF magnetron sputter. The thickness, uniformity, and quality of these samples were evaluated by SEM. Crystallinity and orientation of the Pd film were analyzed by XRD. Finally, Pd/poly 3C-SiC schottky diodes were fabricated and characterized by current-voltage measurements. From these results, Pd/poly 3C-SiC devices are promising for high temperature hydrogen sensors and other microsensors.

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Study on Microbiochip for Buccal Cell Lysis and DNA Purification (상피세포 시료 전처리용 마이크로바이오칩에 관한 연구)

  • Ha, Seung-Mo;Cho, Woong;Ahn, Yoo-Min;Hwang, Seung-Yong
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.34 no.12
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    • pp.1785-1791
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    • 2010
  • This paper describes a separable microfluidic device fabricated with PDMS (polydimethylsiloxane) and glass. The device is used for sample preparation involving cell lysis and the DNA purification process. The cell lysis was performed for 2 min at $80^{\circ}C$ in a serpentine-type microreactor ($20 {\mu}l$) using a Au microheater that was integrated with a thermal microsensor on a glass substrate. The DNA that was mixed with other residual products during the cell lysis process was then filtered through a new filtration system composed of microbeads (diameter: $50 {\mu}m$) and PDMS pillars. Since the entire process (sample loading, cell lysis reaction, DNA purification, and sample extraction) was performed within 5 min in a microchip, we could reduce the sample preparation time in comparison with that for the conventional methods used in biochemistry laboratories. Finally, we verified the performance of the sample preparation chip by conducting PCR (polymerase chain reaction) analysis of the chip product.

Fabrication of Pt Thin-film Type Microheater for Thermal Microsensors and Its Characteristics (열형 마이크로센서용 백금박막형 미세발열체의 제작과 그 특성)

  • 정귀상;홍석우
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.6
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    • pp.509-513
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    • 2000
  • The physical and electrical characteristics of MgO and Pt thin-films on it deposited by reactive sputtering and rf magnetron sputtering respectively were analyzed with annealing temperature and time by four point probe SEM and XRD. Under annealing conditions of 100$0^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin-film and the sheet resistivity and the resistivity of Pt thin-film deposited on it were 0.1288 Ω/ and 12.88 $\mu$$\Omega$.cm respectively. We made Pt resistance pattern on SiO$_2$/Si substrate by life-off method and fabricated Pt thin-film type microheater for thermal microsensors by Pt-wire Pt-paste and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$ we estimated TCR(temperature coefficient of resistance) and resistance ratio of thin-film type Pt-RTD(resistance thermometer device). We obtained TCR value of 3927 ppm/$^{\circ}C$ close to the bulk Pt value. Resistance values were varied linearly within the range of the measurement temperature. The thermal characteristics of fabricated thin-films type Pt micorheater were analyzed with Pt-RTD integrated on the same substrate. The heating temperature of Pt microheater could be up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

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Improvement of the carrier transport property and interfacial behavior in InGaAs quantum well Metal-Oxide-Semiconductor Field-Effect-Transistors with sulfur passivation (황화 암모늄을 이용한 Al2O3/HfO2 다층 게이트 절연막 트랜지스터 전기적 및 계면적 특성 향상 연구)

  • Kim, Jun-Gyu;Kim, Dae-Hyun
    • Journal of Sensor Science and Technology
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    • v.29 no.4
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    • pp.266-269
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    • 2020
  • In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In0.7Ga0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In0.7Ga0.3As QW MOSFETs with and without (NH4)2S treatment and then deposited 1/4 nm of Al2O3/HfO2 through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density Dit (2.83×1012 cm-2eV-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

A Surface-micromachined Tunable Microgyroscope (주파수 조정가능한 박막미세가공 마이크로 자이로)

  • Lee, Ki-Bang;Yoon, Jun-Bo;Kang, Myung-Seok;Cho, Young-Ho;Youn, Sung-Kie;Kim, Choong-Ki
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1968-1970
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    • 1996
  • We investigate a surface-micromachined polysilicon microgyroscope, whose resonant frequencies are electrostatically-tunable after fabrication. The microgyroscope with two oscillation nudes has been designed so that the resonant frequency in the sensing mode is higher than that in the actuating mode. The microgyroscope has been fabricated by a 4-mask surface-micrormachining process, including the deep RIE of a $6{\mu}m$-thick LPCVD polycrystalline silicon layer. The resonant frequency in the sensing mode has been lowered to that in actuating mode through the adjustment of an inter-plate bias voltage; thereby achieving a frequency matching at 5.8kHz under the bias voltage of 2V in a reduced pressure of 0.1torr. For an input angular rate of $50^{\circ}/sec$, an output signal of 20mV has been measured from the tuned microgyroscope under an AC drive voltage of 2V with a DC bias voltage of 3V.

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Design of Sample Chamber and Implementation of a 4-Channel Electrolyte Analyzer using ISFET Microsensor (ISFET 마이크로센서용 샘플챔버 설계 및 4채널 전해질 분석기의 구현)

  • Bae, Sang-Kon;Lee, Ho-Shin;Won, Chul-Ho;Chae, Seung-Pyo;Kim, Chang-Soo;Cho, Byung-Wook;Sohn, Byung-Ki;Kim, Myoung-Nam;Cho, Jin-Ho
    • Journal of Sensor Science and Technology
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    • v.6 no.4
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    • pp.307-315
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    • 1997
  • In this paper, a sample chamber which provide easy replacement of ISFET sensor and consume only small sample volume for electrolyte analysis is designed and a 4-channel electrolyte analyzer employing 2-point calibration method is implemented. In addition, we proposed sample loading detection circuit for minimizing sample and calibration solutions and implemented it. Developed electrolyte analyzer consists of control system part and flow system part. For the effective control of the developed hardware, system software is developed as three individual routines ; measuring routine, calibration routine and washing routine.

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Development of SAW Gas Sensor for Monitoring SOx Gas (SOx 가스감지용 SAW 가스 센서 개발)

  • Lee, Chan-Woo;Roh, Yong-Rae;Chung, Jong-Shik;Baik, Sung-Gi
    • Journal of Sensor Science and Technology
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    • v.5 no.3
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    • pp.41-48
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    • 1996
  • We developed SAW gas sensor for monitoring SOx gas with high sensitivity. It was fabricated as a microsensor for detecting SOx gas by depositing sensing material on SAW device. As a detecting layer material, CdS was selected. Deposition of CdS in the form of thin films was carried out by the ultrasonic spray pyrolysis method using ultrasonic spray nozzle. Thin films with the uniform and large surface area for sensors were deposited. The stable pyrolysis environment provided by uniform and fine droplets formed by spray nozzle made it possible to obtain thin films with excellent quality. The minimum grain size of the CdS thin films was about 50 nm when deposited at $300^{\circ}C$. SAW gas sensors showed reasonable sensitivity and reproducibility. Further studies are required to investigate the interference of other gases to SOx gas detection.

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