• Title/Summary/Keyword: Micro-mobility

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A control dispersion of $TiO_2$ nano powder for electronic paper of electrophoresis (전기영동형 전자종이를 위한 $TiO_2$ 나노분말의 분산 제어)

  • Kim, Jung-Hee;Oh, Hyo-Jin;Lee, Nam-Hee;Hwang, Jong-Sun;Kim, Sun-Jae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.324-327
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    • 2005
  • An electrophoretic display using $TiO_2$ particles is the most promising candidate because it offers various advantages such as ink-on-paper appearance, good contrast ratio, wide viewing angle, image stability in the off-state and extremely low power consumption. The core technology of electrophoretic display is the dispersion controlling of $TiO_2$ nano particles in nonaqueous solution. To prepare an ink for electronic paper using electrophoretic properties of $TiO_2$ nano particles, cyclohexane with low dielectric constant and transparency, polyethylene for producing polymer coating layer which reduces apparent gravity of $TiO_2$, and $TiO_2$ powders were mixed together by planetary-mill. The zeta-potential value of $TiO_2$ particles in cyclohexane was measured about -40mV, but was measured over -110mV by dispersant attached to polyethylene-coated $TiO_2$ surface. Prepared electronic ink was filled in cross patterned micro-wall with $200{\mu}m$ in width and $40{\mu}m$ in height on ITO glass designed by photolithography. The response time of electronic paper evaluated by mobility of $TiO_2$ particle between micro-walls was measured 0.067sec, but the drift velocity from reflectance wave form during reverse from of electronic ink was measured 0.07cm/sec.

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Surface Characteristics of Silicon Substrates Coated with Self-assembled Mono-layers (자체조립 단일막으로 코팅된 실리콘 기판의 표면특성)

  • 최성훈;강호종
    • Polymer(Korea)
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    • v.28 no.1
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    • pp.3-9
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    • 2004
  • Silane modified perfluoropolyethers (SPFPE) was synthesized as a self-assembled mono-layers (SAMs) thin film for micro-electro mechanical system (MEMS). SPFPE was compared to the Perfluoropolyethers (PFPE) as well as octadecyltrichlorosilane (OTS) and perfluorooctyltrichlorosilane (FOTS) with respect to the development of hydrophobicity in the SAMs surface. SPFPE shows less hydrophobicity than those of OTS and FOTS. Thermal annealing of SPFPE SAMs resulted in the enhancement of hydrophobicity as much as those of OTS and FOTS. The SAMs formed from SPFPE were found to be similar as OTS and FOTS SAMs with smooth R$\sub$a/ values of 0.3 nm. However, the flexible chain mobility of SPFPE resulted in 50% reduction as much as the fiction force in OTS.

Load Balancing Mechanisms for MAP in Hierarchical Mobile IPv6 (계층적 Mobile IPv6에서의 MAP 부하 분산 기법)

  • Lee, Seon-Young;Kim, Jung-Ho
    • Proceedings of the Korea Contents Association Conference
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    • 2006.11a
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    • pp.61-64
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    • 2006
  • As a demand of mobile network is increasing, mobile support protocols are suggested. Although HMIPv6 managing the micro mobility with MAP suggests a plan for an effectively mobile support, there has a problem of traffic concentrating. This paper propose efficient schemes of distributing the traffic concentrated on hierarchical Mobile IPv6. This proposed schemes, selecting MAP more than two, are divided by selected 'Active' and 'Passive' MAP. The proposed schemes change a state in MAP and define performance to distribute a load in MAP as the Load is occurred by traffic.

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Pentacene Thin Film Transistors Fabricated by High-aspect Ratio Metal Shadow Mask

  • Jin, Sung-Hun;Jung, Keum-Dong;Shin, Hyung-Chul;Park, Byung-Gook;Lee, Jong-Duk;Yi, Sang-Min;Chu, Chong-Nam
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.881-884
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    • 2004
  • The robust and large-area applicable metal shadow masks with a high aspect ratio more than 20 are fabricated by a combination of micro-electro-discharge machining (${\mu}$-EDM) and electro chemical etching (ECE). After defining S/D contacts using a 100 ${\mu}m$ thick stainless steel shadow mask, the top-contact pentacene TFTs with channel length of 5 ${\mu}m$ showed routinely the results of mobility of 0.498 ${\pm}$ 0.05 $cm^2$/Vsec, current on/off ratio of 1.6 ${times}$ $10^5$, and threshold voltage of 0 V. The straightly defined atomic force microscopy (AFM) images of channel area demonstrated that shadow effects caused by the S/D electrode deposition were negligible. The fabricated pentacene TFTs have an average channel length of 5 ${\pm}$ 0.25 ${\mu}m$.

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Crystallization of Sil-xGex Films Using Field Aided Lateral Crystallization Method (전계 유도 방향성 결정화법을 이용한 Sil-xGex 박막의 결정화)

  • 조기택;최덕균
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.73-73
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    • 2003
  • 최근 LCD(liquid crystal display)분야에서 고해상도와 빠른 응답속도를 가지는 다결정 실리콘 박막트랜지스터에 대한 연구를 하고 있다. 그러나, poly-Si은 poly-Sil-xGex에 비해 intrinsic carrier mobility가 낮고 고온의 결정화 공정을 필요로 한다. 따라서, Poly-Si을 대체할 재료로 poly-SiGe에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 전계에 의해 결정화가 가속되고 한쪽 방향으로 결정화를 제어하여 채널내 전자나 정공의 이동도를 향상시 킬 수 있는 새로운 결정화 방법인 전계 유도 방향성 결정화법을 이용하여 Ge 함량에 따른 a-Sil-xGex(0$\leq$x$\leq$0.5)의 결정화 특성을 연구하였다. 대기압 화학 기상 증착법으로 5000$\AA$의 산화막(SiO$_2$)이 증착된 유리 기판상에 플라즈마 화학 기상 증착법을 이용하여 800$\AA$의 비정질 실리콘을 증착한 후 RF magnetron sputtering법을 이용하여 Ge 함량에 따른 Sil-xGex 박막을 1000$\AA$ 증착하였다. Photolithograph방법을 이용하여 금속이 선택적으로 증착될 수 있는 특정 Pattern을 가진 mask를 형성한 후 금속을 DC magnetron sputtering법을 이용하여 상온에서 50$\AA$.을 증착하였다. 이후 시편에 전계를 인가하기 위해 시편의 양단에 전극을 형성한 후 DC Power Supply를 통해 전압을 제어하는 방식으로 전계를 인가하였다. 결정화 속도는 광학현미경을 이용하여 분석하였으며 결정화된 영역의 결정화 정도는 micro-Raman spectroscopy로 분석하였다.

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Prediction of Deterioration Rate for Composite Material by Moisture Absorption

  • Kim, Yun-Hae;An, Seung-Jun;Jo, Young-Dae;Bae, Chang-Won;Moon, Kyung-Man
    • Journal of Advanced Marine Engineering and Technology
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    • v.34 no.2
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    • pp.296-302
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    • 2010
  • If the fiber reinforced plastic is exposed to the moisture for a long period of time, most of moisture absorption occurs on the resin place, thus dropping cohesiveness between the molecules as the water molecules permeated between high molecular chains grant high molecular mobility and flexibility. Also as the micro crack occurs due to the permeation of moisture on the interface of glass fiber and epoxy resin, it is developed to the overall damage of interface place. Hence, the study on absorption is essential as the mechanical and physical properties of fiber reinforced composites are reduced. However, the study on absorption has the inconvenience needing to expose composite materials to fresh water or seawater for 1 month or up to 1 year. Therefore, this study has exposed fiber reinforced composites to fresh water and has developed a model with an accuracy of 98% after comparing the analysis value obtained by using ANSYS while basing on the experimental value of property decline by absorption and the basic properties of glass fiber and epoxy resin used in the experiment.

Adaptive k-means clustering for Flying Ad-hoc Networks

  • Raza, Ali;Khan, Muhammad Fahad;Maqsood, Muazzam;Haider, Bilal;Aadil, Farhan
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.14 no.6
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    • pp.2670-2685
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    • 2020
  • Flying ad-hoc networks (FANETs) is a vibrant research area nowadays. This type of network ranges from various military and civilian applications. FANET is formed by micro and macro UAVs. Among many other problems, there are two main issues in FANET. Limited energy and high mobility of FANET nodes effect the flight time and routing directly. Clustering is a remedy to handle these types of problems. In this paper, an efficient clustering technique is proposed to handle routing and energy problems. Transmission range of FANET nodes is dynamically tuned accordingly as per their operational requirement. By optimizing the transmission range packet loss ratio (PLR) is minimized and link quality is improved which leads towards reduced energy consumption. To elect optimal cluster heads (CHs) based on their fitness we use k-means. Selection of optimal CHs reduce the routing overhead and improves energy consumption. Our proposed scheme outclasses the existing state-of-the-art techniques, ACO based CACONET and PSO based CLPSO, in terms of energy consumption and cluster building time.

An Experimental Study on the Characteristics of Direct Photoelectric Charging (직접 광대전의 대전특성에 관한 실험적 연구)

  • Lee, Chang-Sun;Kim, Yong-Jin;Kim, Sang-Sao
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.24 no.6
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    • pp.753-759
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    • 2000
  • Photoelectric charging is a very efficient way of charging small particles. This method can be applied to combustion measurement, electrostatic precipitator, metal separation and control of micro-contamination. To understand the photoelectric charging mechanism, particle charging of silver by exposure to ultraviolet is investigated in this study. Average charges and charge distributions are measured at various conditions, using two differential mobility analyzers, a condensation nucleus counter, and an aerosol electrometer. The silver particles are generated in a spark discharge aerosol generator. After that process, the generated particles are charged in the photoelectric charger using low-pressure mercury lamp that emits ultraviolet having wavelength 253.7 nm. The results show that ultra-fine particles are highly charged by the photoelectric charging. The average charges linearly increase with increasing particle size and the charge distribution change with particle size. These results are discussed by comparison with previous experiments and proposed equations. It is assumed that the coefficient of electron emission probability is affected by initial charge. The results also show that the charge distribution of a particle is dependent on initial charge. Single changed particle, uncharged particle and neutralized particle are compared. The differences of charge distribution in each case increase with increasing particle size.

Facile fabrication of ZnO Nanostructure Network Transistor by printing method

  • Choi, Ji-Hyuk;Moon, Kyeong-Ju;Jeon, Joo-Hee;Kar, Jyoti Prakash;Das, Sachindra Nath;Khang, Dahl-Young;Lee, Tae-Il;Myoung, Jae-Min
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.31.1-31.1
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    • 2010
  • Various ZnO nanostructures were synthesized and ZnO nanostructure-based self-assembled transistors were fabricated. Compared to spindle and flower like nanostructure, the ZnO nanorod (NR) structure showed much stronger gate controllability, and greatly enhanced device performance, demonstrating that this structural variation leads to significant differences of the nanostructure network-based device performance. Also, patterned dry transfer-printing technique that can generate monolayer-like percolating networks of ZnO NRs has been developed. The method exploits the contact area difference between NR-NR and NR-substrate, rather than elaborate tailoring of surface chemistry or energetic. The devices prepared by the transferring method exhibited on/off current ratio, and mobility of ${\sim}2.7{\times}10^4$ and ${\sim}1.03\;cm^2/V{\cdot}s$, respectively. Also, they exhibited showing lower off-current and stronger gate controllability due to defined-channel between electrodes and monolayer-like network channel configuration. With multilayer stacks of nanostructures on stamp, the monolayer-like printing can be repeated many times, possibly on large area substrate, due to self-regulating printing characteristics. The method may enable high-performance macroelectronics with materials that have high aspect ratio.

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Facile Fabrication Process for Graphene Nanoribbon Using Nano-Imprint Lithography(NIL) and Application of Graphene Pattern on Flexible Substrate by Transfer Printing of Silicon Membrane (나노임프린트 리소그래피 기술을 이용한 그래핀 나노리본 트랜지스터 제조 및 그래핀 전극을 활용한 실리콘 트랜지스터 응용)

  • Eom, Seong Un;Kang, Seok Hee;Hong, Suck Won
    • Korean Journal of Materials Research
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    • v.26 no.11
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    • pp.635-643
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    • 2016
  • Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped $Si/SiO_2$ substrate. Consequently, we observed an enhancement of the performance of the GNR-transistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.