Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 2010.05a
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- Pages.31.1-31.1
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- 2010
Facile fabrication of ZnO Nanostructure Network Transistor by printing method
- Choi, Ji-Hyuk ;
- Moon, Kyeong-Ju ;
- Jeon, Joo-Hee ;
- Kar, Jyoti Prakash ;
- Das, Sachindra Nath ;
- Khang, Dahl-Young ;
- Lee, Tae-Il ;
- Myoung, Jae-Min
- Published : 2010.05.13
Abstract
Various ZnO nanostructures were synthesized and ZnO nanostructure-based self-assembled transistors were fabricated. Compared to spindle and flower like nanostructure, the ZnO nanorod (NR) structure showed much stronger gate controllability, and greatly enhanced device performance, demonstrating that this structural variation leads to significant differences of the nanostructure network-based device performance. Also, patterned dry transfer-printing technique that can generate monolayer-like percolating networks of ZnO NRs has been developed. The method exploits the contact area difference between NR-NR and NR-substrate, rather than elaborate tailoring of surface chemistry or energetic. The devices prepared by the transferring method exhibited on/off current ratio, and mobility of