• 센서학회지
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• 제19권6호
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• pp.462-468
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• 2010

A low power gas sensor with microheater was fabricated by MEMS technology. In order to heat up the gas sensing material to a operating temperature, a platinum(Pt) micro heater was built on to the micromachined Si substrate. The width and gap of microheater were $20\;{\mu}m$ and $4.5\;{\mu}m$, respectively. ZnO nanowhisker arrays were fabricated on a sensor device by hydrothermal method. The sensor device was deposited with ZnO seeds using PLD systems. A 200 ml aqueous solution of 0.1 mol zinc nitrate hexahydrate, 0.1 mol hexamethylenetetramine, and 0.02 mol polyethylenimine was used for growthing ZnO nanowhiskers. The power consumption to heat up the gas sensor to a operating temperature was measured and temperature distribution of sensor was analyzed by a Infrared Thermal Camera. The optimum temperature for highest sensitivity was found to be $250^{\circ}C$ although relatively high(64 %) sensitivity was obtained even at as low as $150^{\circ}C$. The power consumption was 72 mW at $250^{\circ}C$ and was only 25 mW at $150^{\circ}C$.

• 한국자동차공학회논문집
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• 제13권3호
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• pp.123-130
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• 2005

In this study, we evaluated the CH4 and CO conversion efficiencies over the oxidation catalysts for natural gas vehicle with lean-burn system. On the fresh catalyst, the conversion efficiency was increased when the loading of precious metal was increased. On the aged catalyst, the conversion efficiency was decreased as increasing the excess air ratio. We could confirm the measuring conversion efficiency of the unsteady state with the FTIR and that of steady state with the GC The temperature increasing ratio of unsteady state is acceptable from 3$^{\circ}C$/min. to 15$^{\circ}C$/min. for the evaluation of catalyst conversion performance , which has within the 4$\%$ of the difference of conversion efficiency. We observed a physical behavior of the thermal aged catalyst's surface using TEM and BET device. It was found that the precious metal was grown to the micro-scopic size by thermal aging process.

• 한국생산제조학회지
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• 제24권3호
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• pp.314-319
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• 2015

Invar is a compound metal of Fe-Ni system contained 36.5% Ni. The characteristic of invar is that the coefficient of thermal expansion is $1.0{\times}10^{-6}cm/^{\circ}C$. It is approximately 10 times smaller than series of steel. Because of this low thermal expansion characteristic of Invar, it is used to shadow mask of display device such as UHDTV or OLED TV. In this study, pulse current from pulse generator instead of DC current is used to overcome the disadvantages of the conventional electrochemical machining. Pulsed current with different duty factor in PECM affect the precise geometry. Pulse electrochemical machining is conducted to machine the micro hole to the invar sheet with different duty factor. The machined shape and overcut of invar sheet with different duty factor is observed by optical microscope and scanning electron microscope (SEM).

• 한국초전도ㆍ저온공학회논문지
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• 제12권4호
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• pp.41-45
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• 2010

Miniature Joule-Thomson refrigerators have been widely used for rapid cooling of infrared detectors, optoelectronic device, and integrated circuits of micro electronics. The typical J-T refrigerator consists of the recuperative heat exchanger with the double helical tube and fin configuration, J-T nozzle, a mandrel, Dewar and a compressed gas storage bottle. In this study, to predict the thermodynamic behaviors of the refrigerator with a compressed gas storage bottle during the cool-down time, numerical study of transient characteristics for a J-T refrigerator was developed. A simplified transient one.dimensional model of the momentum and energy equations was simultaneously solved to consider the thermal interactions of the each component of the refrigerator. To account for effects of the thermal mass of the solid, the heat capacities of the tube, fins, mandrel and Dewar are considered. The results show the charged gas pressure of the gas storage bottle has significant effects on the performance of the J-T refrigerator. At the elevated gas pressure of the gas storage bottle, the large capacity of the compressed gas storage does not need to get the fast cool-down performance of the J-T refrigerator in the cool-down stage.

• 한국진공학회지
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• 제19권2호
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• pp.141-147
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• 2010

$Al_2O_3$, $TiO_2$, $HfO_2$와 같은 high-k (고 유전상수) 산화물 박막을 Si, $SiO_2$/Si, GaAs 기판에 각각 입혀서 주기적인 온도변화에 의해 발생되는 박막 표면에서의 반사율 변화를 이용한 열-반사율법을 이용하여 열전도도를 측정하였다. 그 결과, 약 50nm 두께에서 0.80~1.29 W/(mK)와 같은 높은 열전도도를 가지고 있어 CMOS와 메모리 디바이스와 같은 전자 회로에서 발생되는 열을 효과적으로 방산할 수 있고, 또 미세 입자의 크기에 따라 열전달이 변화하는 것을 확인하였다.

• 반도체디스플레이기술학회지
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• 제21권1호
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• pp.148-154
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• 2022

As the 4th industrial age approaches, the demand for semiconductors is increasing enough to be used in all electronic devices. At the same time, semiconductor technology is also developing day by day, leading to ultraprecision and low power consumption. Semiconductors that keep getting smaller generate heat because the energy density increases, and the generated heat changes the shape of the semiconductor package, so it is important to manage. The temperature change is not only self-heating of the semiconductor package, but also heat generated by external damage. If the package is deformed, it is necessary to manage it because functional problems and performance degradation such as damage occur. The package burn in test in the post-process of semiconductor production is a process that tests the durability and function of the package in a high-temperature environment, and heat dissipation performance can be evaluated. In this paper, we intend to review a new material formulation that can improve the performance of the adapter, which is one of the parts of the test socket used in the burn-in test. It was confirmed what characteristics the basic base showed when polyamide, a high-molecular material, and alumina, which had high thermal conductivity, were mixed for each magnification. In this study, functional evaluation was also carried out by injecting an adapter, a part of the test socket, at the same time as the specimen was manufactured. Verification of stiffness such as tensile strength and flexural strength by mixing ratio, performance evaluation such as thermal conductivity, and manufacturing of a dummy device also confirmed warpage. As a result, it was confirmed that the thermal stability was excellent. Through this study, it is thought that it can be used as basic data for the development of materials for burn-in sockets in the future.

• 센서학회지
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• 제24권6호
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• pp.379-384
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• 2015

An infrared image sensor is a core device in a thermal imaging system. The fabrication method of a focal plane array (FPA) is a key technology for a high resolution infrared image sensor. Each pixels in the FPA have $Si_3N_4/SiO_2$ membranes including legs to deposit bolometric materials and electrodes on Si readout circuits (ROIC). Instead of polyimide used to form a sacrificial layer, the feasibility of an amorphous silicon (${\alpha}-Si$) was verified experimentally in a $8{\times}8$ micro-bolometer array with a $50{\mu}m$ pitch. The elimination of the polyimide sacrificial layer hardened by a following plasma assisted deposition process is sometimes far from perfect, and thus requires longer plasma ashing times leading to the deformation of the membrane and leg. Since the amorphous Si could be removed in $XeF_2$ gas at room temperature, however, the fabricated micro-bolomertic structure was not damaged seriously. A radio frequency (RF) sputtered nickel oxide film was grown on a $Si_3N_4/SiO_2$ membrane fabricated using a low stress silicon nitride (LSSiN) technology with a LPCVD system. The deformation of the membrane was effectively reduced by a combining the ${\alpha}-Si$ and LSSiN process for a nickel oxide micro-bolometer.

• 폴리머
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• 제33권1호
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• pp.91-95
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• 2009

폴리(아미드-이미드)와 연자성체의 블렌딩에 의해 고온에서 이용 가능한 내열성 전자기 노이즈 흡수용 필름을 제조하였다. N,N-디메틸아세트아미드에 폴리(아미드 아믹 산)을 용해시킨 후 연자성체 파우더를 혼합하고 이용액을 유리 기판에 캐스팅한 뒤 열을 가하여 이미드화하는 방법으로 전자기 노이즈 흡수 필름을 제조하였다. 제조된 필름의 열적 특성, 열 안정성 및 기계적 성질을 분석하고 마이크로 스트립 라인 법에 의해 전자기 흡수력을 측정하였는데,1 GHz에서 150 ${\mu}m$두께의 복합체 필름의 전력손실(power loss)은 약 25%였다.

• 마이크로전자및패키징학회지
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• 제28권2호
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• pp.89-94
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• 2021

최근 플렉시블 기기의 상용화를 위하여 기계적 신뢰성 연구가 활발히 진행되고 있으며 이를 고려하여 신뢰성 높은 다양한 접합부의 구현이 중요하다. 기기의 많은 부피를 차지하는 고분자 기판 또는 필름을 접합할 때에는 재료의 약한 내열성으로 접합공정 중 열 손상이 발생할 수 있으므로 신뢰성을 확보를 위해 상온 접합공정이 필요하다는 제약이 있다. 기존의 기판 접합을 위해 사용되는 에폭시 또한 고온 경화가 요구되는 경우가 많고, 특히 경화 접합 후 에폭시는 접합부 유연성 및 피로 내구성에서 한계를 보인다. 이를 해결하기 위하여 접착제 사용이 없는 저온 접합 공정의 개발이 필요한 상황이다. 본 연구에서는 마이크로파에 의한 탄소나노튜브 가열을 이용한 고분자 기판의 저온 접합공정을 개발하였다. PET 고분자 기판에 다중벽 탄소나노튜브 (MWNT)를 박막 코팅한 뒤 이를 마이크로파로 국부 가열함으로써 접합 기판 전체는 저온을 유지하며 CNT-PET 기계적 얽힘을 유도하는 방식이다. PET/CNT/PET 접합시편에 600 Watt 출력의 마이크로파를 10초간 조사함으로써 유연기판 접합에 성공하였고 매우 얇은 CNT 접합부를 구현하였다. 접합 시편의 기계적 신뢰성을 평가하기 위해 중첩 전단 강도 시험, 삼점 굽힘 시험, 반복 굽힘 시험을 수행하였으며 각 시험으로부터 우수한 접합강도, 유연성, 굽힘 내구성이 확인되었다.

• 센서학회지
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• 제8권2호
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• pp.115-123
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• 1999

PSG(800nm)/$Si_3N_4$ (150nm)로 구성된 유전체 membrane 윗면에 heater와 감지전극을 등일면상에 동시에 형성하였다. 제작된 소자의 전체 면적은 $3.78{\times}3.78mm^2$이고, diaphragm의 면적은 $1.5{\times}1.5mm^2$이며, 감지막치 면적은 $0.24{\times}0.24mm^2$였다. 그리고 diaphragm내의 열분포 분석을 유한요소법을 이용하여 수행하였으며, 실제로 제작된 소자의 열분포와 비교하였다. 소비전력은 동작온도 $350^{\circ}C$에서 약 85mW였다. Sn 금속막을 상온과 $232^{\circ}C$의 두 가지 기판온도에서 열증착하였고, 이를 $650^{\circ}C$의 산소분위기에서 3시간 열산화함으로써 $SnO_2$ 감지막을 형성하였다. 그리고 이를 SEM과 XRD로 특성을 분석하였다. 제작된 소자에 대해서 온도 및 습도에 대한 감지막의 영향 및 부탄가스에 대한 반응특성도 조사하였다.