• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.366-371
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• 2012

In this paper, fabricated by MEMS uncooled micro-bolometer detector for the study in the infrared sensitivity enhancement. Absorption layer SiOx-Metal series MDTF (metal-dielectric thin film) by high absorption rate and has a high thermal coefficient of resistance, low noise characteristics were implemented. Then MDTF were made in a vacuum deposition method. And MDTF for the analysis of the physical properties of silicon wafers were fabricated, TCR (temperature coefficient of resistance) value was made in order to measure the glass wafer and FT-IR (Fourier Transform Infrared spectroscopy) values were made in order to measure the germanium window. The analyzed results of MDTF -3 [%/K] has more characteristics of the TCR. And 8~12 um wavelength region close to 70% in the absorption characteristic.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1240_1241
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• 2009

In this paper, sol-gel-spin coated $Pb(ZrTi)O_3$ thin film with $ZrO_2$ buffer-layer and $PbTiO_3$ seed-layer was investigated for vibration MEMS energy harvester to scavenge power from ambient vibration via d33 piezoelectric mode. Piezoelectric thin film deposition techniques on insulating layer is the important key for $d_{33}$ mode of piezoelectric vibration energy harvester. $ZrO_2$ buff-layer was utilized as an insulating layer. $PbTIO_3$ seed-layer was applied as an inter-layer between PZT and $ZrO_2$ layer to improve the crystalline of PZT thin film. The fabricated PZT thin film had a remanent polarization of 5.3uC/$cm^2$ and the coercive field of 60kV/cm. The fabricated energy harvester using PZT thin film with PTO seed-layer generated 1.1uW of electrical power to $2.2M{\Omega}$ of load with $4.4V_{pvp}$ from vibration of 0.39g at 528Hz.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.2 s.31
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• pp.11-16
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• 2004

Electronic devices are getting smaller due to integration of electronic chip, and heat generated in electronic devices can cause loss of performance and/or reliability of the devices. In this research, metals such as gold, nickel and copper are plated onto a porous membrane by electroless plating method to make an efficient micro-heatsinks. Electroless plating includes sensitization and activation steps in pre-treatment steps. A polycarbonate(PC) membrane was sensitizied, activated and deposited in each metal solution for plating. Among manufactured microfibrils, heat transfer and radiation properties of Ni-microfibril with high surface area were more effective than those of $Au^-$ and Cu-microfibril.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.9
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• pp.720-727
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• 2008

Microfluidic single chip integrating thermopneumatic micropump and micro check valve are developed. The micropump and micorvalve are made of biocompatible materials, glass and PDMS, so as to be applicable to the biochip. By using the passive-type check valve, backward flow and fluid leakage are blocked and flow control is stable and precise. The chip is composed of three PDMS layers and a glass substrate. In the chip, flow channel and pump chamber were made on the PDMS layers by the replica molding technique and pump heater was made on the glass substrate by Cr/Au deposition. Diameter of the pump chamber is 7 mm and the width and depth of the channel are 200 and $180{\mu}m$, respectively. The PDMS layers chip and the heater deposited glass chip are combined by a jig and a clamp for pumping operation, and they are separable so that PDMS chip is used as a disposable but the heater chip is able to be used repeatedly. Pumping performance was simulated by CFD software and investigated experimentally. The performance was the best when the duty ratio of the applied voltage to the heater was 33%.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.369.2-369.2
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• 2014

Diamond-like Carbon(DLC) films doping Si were deposited by linear ion source(LIS)-physical vapor deposition method on Si wafer. We have studied the effects of Si content on friction and wear properties of DLC films and the characteristics of the films were investigated using Nano-indentation, Micro raman spectroscopy, Field Emission-Scanning Electron Microscope (FM-SEM) and X-ray Photoelectron Spectroscopy (XPS). The films has been various low-friction and low-stress by varying the flow rates of silane gas. Under the about 2% of Si doping is very suitable for improving the adhesion of films and reducing internal stress while maintaining the surfaces hardness of DLC films. Linear ion source (LIS)를 사용하여 Si wafer위에 Si 이온이 첨가된 DLC 박막을 증착하였다. 참가된Si 이온의 양에 따라 DLC 박막에 미치는 영향을 분석하기 위하여 마찰 계수 및 경도를 비교하였고, Micro raman spectroscopy, Field Emission-Scanning Electron Microscope (FM-SEM) and X-ray Photoelectron Spectroscopy (XPS)를 통하여 표면 상태를 분석하였다. 천체 주입된 가스량의 약 2%까지 Si 이온 주입이 늘어날수록 DLC 박막의 마찰계수는 낮아졌고, 경도는 Si 이온이 주입되지 않았을 경우와 비슷한 값(약 20~23 GPa)을 가졌다. 2% 이상의 주입량에서는 마찰계수는 주입량이 늘어날수록 높아졌으며 경도는 떨어지는 경향을 보였다. 이는 Si이온이 2%이하로 첨가되었을 경우, DLC 박막의 생성시 탄소 이온들의 결합 Stress를 줄여 마찰계수가 줄어든다고 볼 수 있으며, 그 양이 2%이상이 되면 오히려 불순물로 작용하여 DLC 박막의 Stress는 급격히 증가하고 마찰계수도 높아짐을 알 수 있다.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.788-796
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• 1996

$TiO_2$ films prepared by RF magnetron sputtering, electron beam evaporation, ion assisted deposition (IAD) and sol-gel method are prepared on c-Si substrate and vitreous silica substrate respectively. From the transmission spectra of $TiO_2$ films on vitreous silica substrate in the spectral region from 190 nm to 900 nm, k($\lambda$) of $TiO_2$ is obtained. Using k($\lambda$) in the interband transition region the coefficients of the quantum mechanical dispersion relation of an amorphous $TiO_2$ and hence n($\lambda$) including the optically opaque region of above fundamental transition energy are obtained. The spectroscopic ellipsometry spectra of $TiO_2$ films in the spectral region of 1.5-5.0eV are model analyzed to get the film packing density variation versus i) substrate material, ii) film thickness and iii) film growth technique. The complex refractive index change of these $TiO_2$ films versus water condensation is also studied. Film micro-structures by SE modelling results are compared with those by atomic force microscopy images and X-ray diffraction data.

• Journal of Welding and Joining
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• v.25 no.3
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• pp.28-36
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• 2007

A bulk amorphous NiTiZrSiSn powder produced using an inert gas atomization was sprayed by kinetic spraying process that is basically a solid-state deposition process onto a mild steel substrate. They were successfully overlaid onto the mild steel substrate. In order to evaluate the tribological behavior of the kinetic sprayed NiTiZrSiSn BMG (Bulk Metallic Glass) coatings, a partially crystallized coating and a fully crystallized coating were prepared by the isothermal heat treatments. Tribological behaviors were investigated in view of friction coefficient, hardness and amorphous phase fraction of coating layer. Surface morphologies and depth in the wear tracks were observed and measured by scanning electron microscope and alpha-step. From the examination of the scratch wear track microstructure, transition from the ductile like deformation (micro cutting) to the brittle deformation (micro fracturing) in the scratch groove was observed with the increase of the crystallinity.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.350-356
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• 2014

Recently, Chemical Vapor Deposition (CVD) synthetic diamonds have been introduced to the jewelry gem market, as CVD technology has been making considerable advances. Unfortunately, CVD diamonds are not distinguishable from natural diamonds when using the conventional gemological characterization method. Therefore, we need to develop a new identification method that is non-destructive, fast, and inexpensive. In our study, we employed optical microscopy and spectroscopy techniques, including Fourier transform infra-red (FT-IR), UV-VIS-NIR, photoluminescence (PL), micro Raman, and cathodoluminescent (CL) spectroscopy, to determine the differences between a natural diamond (0.30 cts) and a CVD diamond (0.43 cts). The identification of a CVD diamond was difficult when using standard gemological techniques, UV-VIS-NIR, or micro-Raman spectroscopy. However, a CVD diamond could be identified using a FT-IR by the Type II peaks. In addition, we identified a CVD diamond conclusively with the uneven UV fluorescent local bands, additional satellite PL peaks, longer phosphorescence life time, and uneven streaks in the CL images. Our results suggest that using FT-IR combined with UV fluorescent images, PL, and CL analysis might be an appropriate method for identifying CVD diamonds.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.809-816
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• 1995

Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2032-2034
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• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface slew discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the do bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.