• Transactions of the Korean Society of Mechanical Engineers B
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• v.34 no.6
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• pp.579-586
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• 2010

With the development of micrototal analysis systems (${\mu}TAS$), which is a result of enhancement of MEMS technology, rapid progress has been achieved in medical and biological research. The study of lab-on-a-chip (LOC) devices, which are types of ${\mu}TAS$ and which integrate the functions of mixing and analyzing tiny amounts of samples and reagents on one chip, has actively progressed. An LOC comprises microfluidic components such as micromixers and micropumps. Because the flow in a microfluidic system is generally laminar, it is very difficult to efficiently mix and feed fluid reagents. This paper presents the design and the method of fabrication of an MHD micropump for mixing fluids. By using this micropump, fluids are simultaneously mixed and pumped; this is achieved by coupling the Lorentz force and force exerted by an electric charge moving in an electric field.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.63-69
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• 2011

In this study, we report on the novel lithographic patterning method to fabricate organic thin film field effect transistors (OTFTs) based on photo and e-beam lithography with well-known silicon technology. The method is applied to fabricate pentacene-based organic field effect transistors. Owing to their solubility, sub-micron sized patterning of P3HT and PEDOT has been well established via micromolding in capillaries and inkjet printing techniques. Since the thermally deposited pentacene cannot be dissolved in solvents, other approach was done to fabricate pentacene FETs with a very short channel length (~30 nm), or in-plane orientation of pentacene molecules by using nanometer-scale periodic groove patterns as an alignment layer for high-performance pentacene devices. Here, we introduce $Al_2O_3$ film grown via atomic layer deposition method onto pentacene as a passivation layer. $Al_2O_3$ passivation layer on OTFTs has some advantages in preventing the penetration of water and oxygen and obtaining the long-term stability of electrical properties. AZ5214 and ma N-2402 were used as a photo and e-beam resist, respectively. A few micrometer sized lithography patterns were transferred by wet and dry etching processes. Finally, we fabricated micron sized pentacene FETs and measured their electrical characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.38-41
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• 2004

The oxidizer plays an important role in the metal chemical mechanical polishing(CMP) slurry. Currently, the oxidizer used in CMP slurry is nearly divided into several kinds such as $Fe(NO_3)_3$, $H_2O_2$, $KIO_3$, and $H_5IO_6$. It is generally known that oxidizer character of $H_2O_2$ is more effective than other oxidizers. In this work, we have been studied the characteristics for the $H_2O_2$ concentration of copper slurry, which can applicable in the recent semiconductor manufacturing process. Also, it plays an important role in the planarization of copper films using copper slurries during micro-electronic device fabrication. In this work, we confirmed that removal rate of Cu/TaN changed by $H_2O_2$ concentration on copper slurry. And we used $KMnO_4$ in the measurement method of $H_2O_2$. In analysis results, we confirmed that the difference of results is large. We thought that the difference was due to organic component existence. So in titration method of $H_2O_2$ concentration, we used $Na_2S_2O_3$ instead of $KMnO_4$ as solution. Consequently, using the titration method, we could calculate correct data reduced error. And $H_2O_2$ concentration has been adjusted to the target concentration of 0.1 wt%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.665-670
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• 2016

Prevailing dissemination of machine tools and cutting technology have caused drastic developments of high speed dry machining with work materials of high hardness, and demands on the high-hardness-materials with high efficiency have become increasingly important in terms of productivity, cost reduction, as well as environment-friendly issue. Addition of Si to TiAlN has been known to form nano-composite coating with higher hardness of over 30 GPa and oxidation temperature over $1,000^{\circ}C$. However, it is not easy to add Si to TiAlN by using conventional PVD technologies. Therefore, Ti-Al-Si-N have been prepared by hybrid process of PVD with multiple target sources or PVD combined with PECVD of Si source gas. In this study, a single composite target of Ti-Al-Si was prepared by powder metallurgy of MA (mechanical alloying) and SPS (spark plasma sintering). Properties of he resulting alloying targets were examined. They revealed a microstructure with micro-sized grain of about $1{\sim}5{\mu}m$, and all the elements were distributed homogeneously in the alloying target. Hardness of the Ti-Al-Si-N target was about 1,127 Hv. Thin films of Ti-Al-Si-N were prepared by unbalanced magnetron sputtering method by using the home-made Ti-Al-Si alloying target. Composition of the resulting thin film of Ti-Al-Si-N was almost the same with that of the target. The thin film of Ti-Al-Si-N showed a hardness of 35 GPa and friction coefficient of 0.66.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.185-188
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• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2 \; (PN_2)$ gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and $PN_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• Journal of the Institute of Convergence Signal Processing
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• v.9 no.2
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• pp.146-153
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• 2008

Integrated humidity sensor system with two stages operational amplifier has been designed and fabricated by $0.8{\mu}m$ analog mixed CMOS technology. The system (28 pin and $2mm{\times}4mm$) consisted of Wheatstone-bridge type humidity sensor, resistive type humidity sensor, temperature sensors and operational amplifier for signal amplification and process in one chip. The poly-nitride etch stop process has been tried to form the sensing area as well as trench in a standard CMOS process. This modified technique did not affect the CMOS devices in their essential characteristics and gave an allowance to fabricate the system on same chip by standard process. The operational amplifier showed the stable operation so that unity gain bandwidth was more than 5.46 MHz and slew rate was more than 10 V/uS, respectively. The drain current of n-channel humidity sensitive field effect transistor (HUSFET) increased from 0.54 mA to 0.68 mA as the relative humidity increased from 10 to 70 %RH.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.12
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• pp.1292-1299
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• 2003

In this paper, we fabricated new GaAs-based dielectric-supported air gapped microstriplines(DAMLs) using the surface MEMS and the LPF for Ka-band using the fabricated DAMLs. We elevated the signal lines from the substrate, in order to reduce the substrate dielectric loss and obtain low losses at millimeter-wave frequency band with wide impedance range. We fabricated LPF with DAMLs for Ka-band. Due to reducing the dielectric loss of DAMLs, the insertion loss of LPF can be reduced. Miniature is essential to integrate LPF with active devices, so that we fabricated LPF with the slot on the ground to reduce the size of the LPF. We compared a characteristic to LPF with the slot and LPF without the slot.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.5
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• pp.191-195
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• 2002

Chemical mechanical Polishing (CMP) process is widely used for the global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2$ ($PN_2$) gas, point of use (POU) slurry filler and high spray bar (HSB) were installed. Our experimental results show that DW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.37-44
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• 2004

This paper describes a new GaAs-based surface-micromachined microstrip line supported by dielectric post and air-gapped signal line with ground metal. This new type of dielectric-supported air-gapped microstripline(DAML) structure is developed using surface micromachining techniques to provide easy means of airbridge connection between the signal lines and to archive low losses at millimeter-wave frequency band with wide impedance range. Each DAMLs with the length of 5 mm are fabricated and the measured characteristics are compared with those of the conventional microstrip transmission line. These transmission lines are composed of 10 ${\mu}{\textrm}{m}$ height of signal line, post size of 10 ${\mu}{\textrm}{m}$ ${\times}$ 10 ${\mu}{\textrm}{m}$ and post height of 9 ${\mu}{\textrm}{m}$. By elevating the signal lines from the substrate using the micromachining technology, the substrate dielectric loss can be reduced Compared with of the conventional microstrip transmission line showing 7.5 dB/cm loss at 50 GHz, the loss can be reduced to 1.1 dB/cm loss at 50 GHz.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.5
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• pp.871-876
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• 2019

We fabricated concave optical fiber tips using hydrofluoric acid solution and photothermal effect induced by $1.55{\mu}m$ wavelength laser applied to an optical fiber. The radius of curvature of the concave optical fiber tips fabricated with different applied laser power, etching time, and concentration of hydrofluoric acid was measured with an optical microscope. Then, we analyzed how the radius of curvature changes for those three variables. In addition, the reliability of the measurement method using a microscope was verified through a free spectral range(FSR) and a scanning electron microscope(SEM). Through this paper, the radius of curvature can be adjusted by the variables of the fabrication process of concave optical fiber tips; thus, it is overcoming the limitations of conventional optical fiber etching methods using hydrofluoric acid solutions.