• 한국광학회지
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• 제9권6호
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• pp.423-427
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• 1998

광정보처리용 매질로 많이 사용되는 $LiNbO_3$ 와 $BaTIO_3$ 결정에 대한 이광파혼합 실험을 통하여 광정보처리 소자로서의 특성을 조사하였다. 조사된 결정들은 각각 QJADYDD로 사용되는 것들로서,$BaTIO_3$는 0.03% mol의 ceruim이 첨가된 것이며, 두 개의 LiNbO3는 각각 0.03% mol의 Fe와 6% mol의 MgO 가 첨가된 것이다. 이광파혼합을 위한 기록광으로는 $Ar^+$ 이온 레이저를 사용하였고, 실시간으로 기록, 소거 및 감쇠를 관찰하기 위한 검출광으로는 He-Ne 레이저를 이용하였다. 각 결정들에 대하여 회절격자의 기록-감쇠 및 소거 특성, 조사광에 대한 응답특성, 또한 각 선택성을 측정하고 비교하였다.

• Transactions on Electrical and Electronic Materials
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• 제2권4호
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• pp.24-29
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• 2001

GaN films were grown for various Mg doping concentrations in metal-organic chemical vapor deposition. Below the Mg concentration of 10$^{19}$ ㎤, the thermally annealed sample shows the compensated phase to n-type GaN in Hall measurement. In the MB concentration of 4$\times$10$^{19}$ ㎤ corresponding to the hole carrier concentration of 2.6$\times$1$^{19}$ ㎤ there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the $V_{Ga}$ and for an acceptor of $Mg_{Ga}$ . The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photocurrent signal of 3.02-3.31 eV. Above the Mg concentration of 4$\times$10$^{19}$ ㎤, both the Mg doping level and Mg concentration were saturated and there Is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band.

• 반도체디스플레이기술학회지
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• 제6권4호
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• pp.29-32
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• 2007

Zinc gallate, $ZnGa_2O_4:Mn^{2+}$ co-doped with different concentrations of $Mg^{2+}$ (0.001- 0.5 mol%) was prepared by solid state synthesis method. These compositions were investigated for their photoluminescence and cathodoluminescence properties. The optimized composition $Zn_{0.990}Mg_{0.005}Ga_2O_4:Mn_{0.005}$ shows higher luminescence intensity compared to the parent phosphor. The intense green emission peak was found at 504 nm. The $Mg^{2+}$ doping does not affect much the decay time. It remains <10 ms for these compositions which make them potential candidate for application in TV screens.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1057-1059
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• 2008

Study of the ion-induced-, photo- and exo-electron emission from a Sc doped MgO protective layer has been performed. It is established that doping with Sc increases photo- and especially exo-electron emission from MgO films while the ion-induced electron emission coefficient $\gamma$ stays unchanged.

• 한국세라믹학회지
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• 제28권12호
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• pp.1019-1025
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• 1991

The effect of dissolved Ca ion from plaster mold during slip casting on the microstructure and fracture toughness of high-purity sintered alumina were investigated. When the alumina slip containing 1000 ppm MgO was casted on a calcined alumina mold, the sintered compact had a homogeneous microstructure with equiaxed grains. However, when the same slip was casted on a plaster mold, the sintered compact consisted of the mixture of equiaxed and elongated grains. This inhomogeneous microstructure was also observed in the sintered alumina doped with 100o ppm MgO and 100 ppm CaO whose compact was prepared on the calcined alumina mold indicating that the inhomogeneity was caused by CaO. It was found that the specimen containing both MgO and CaO had higher fracture toughness than that containing MgO only. The enhanced fracture toughness by CaO is probably due to the crack deflection along the boundaries of the elongated grains.

• 한국결정성장학회지
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• 제6권3호
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• pp.327-340
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• 1996

고주파로의 이용한 Czocharalski 법으로 congruent$(R_{m}=R_{c}=0.945)$, stoichiometric$(R_{m}=1,\;R_{c}=0.957)$, Li-rich$(R_{m}=1.202,\;R_{c}=0.989)$, congruent한 조성에 $K_{2}O$를 6 wt% 첨가한 $LiNbO_{3}$ 등의 순수한 단결정들과 congruent한 조성에 Mg와 Mn을 불순물로 첨가한 $LiNbO_{3}:Mn(0.1\;mole%),\;LiNbO_{3}:Mg(4.5,\;6.0,\;10.0\;mole%),\;LiNbO_{3}:(Mg(4.5,\;6.0,\;10.0\;mole%)+Mn(0.1\;mole%))$ 단결정들을 결정의 c.축 방향으로 성장시켰다. 실온데서 UV 스펙트럼과 IR 스펙트럼을 측정한 결과 UV 흡수단과 $OH^{-}$ 흡수 스펙트럼은 [Li]/[Nb] 비에 따라 변화한다. 또 첨가한 Mg, Mn 불순물들의 영향을 받는데 UV 흡수단의 위치와 $OH^{-}$ 흡수 스펙트럼의 위치, 모양이 Mg의 첨가량에 크게 의존하며 이는 Mg의 첨가량에 따라 이 이온의 결정내 위치가 달라지기 때문이다. 순수한 단별정들에 대한 $OH^{-}$ 흡수 스펙트럼을 Gaussian 선모습 함수를 써서 3, 5 개의 성분 스펙트럼으로 분해한다. 이 결과를 설명하기 위한 $LiNbO_{3}$ 단결정내의 배내, 배외 결함 구조에 대한 논의로 부터 Li 빈자리 모델이 결함 구조를 설명하는데 적합하다는 결론을 내렸고 이들 불순물 이온의 결정내의 위치도 정한다. 또한 결함 구조에 대한 본 연구의 결론을 이용하여 최근의 다른 연구자들의 실험 결과도 설명한다.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.760-765
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• 2009

The effects of $Fe_2O_3$ addition on optical and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. Doped MgO films prepared by the e-beam evaporation have a higher ${\gamma}$ (secondary electron emission coefficient) than pure MgO protective layer. Roughness increased with amount of $Fe_2O_3$ up to 100 ppm and then decreased further addition. These results showed that discharge properties and optical properties of MgO protective layers seemed to be closely related with microstructure factors such as roughness. Good optical and electrical properties of ${\gamma}$ of 0.120, surface roughness of 14.1 nm and optical transmittance of 94.55% were obtained for the MgO + 100 ppm $Fe_2O_3$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

• 한국전기전자재료학회논문지
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• 제20권7호
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• pp.620-625
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• 2007

The effects of $Gd_2O_3$ addition and sintering condition on optical and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. Doped MgO films prepared by the e-beam evaporation have a higher ${\Upsilon}$ (secondary electron emission coefficient) than pure MgO protective layer. Relative density and grain size increased with amount of $Gd_2O_3$ up to 100 ppm and then decreased further addition. These results showed that discharge properties and optical properties of MgO protective layers seemed to be closely related with microstructure factors such as relative density and grain size. Good optical and electrical properties of ${\Upsilon}$ of 0.138, surface roughness of 5.77 nm and optical transmittance of 95.76 % were obtained for the MgO+100 ppm $Gd_2O_3$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

• 한국세라믹학회지
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• 제55권3호
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• pp.290-298
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• 2018

In order to investigate the effect of thickness on the dielectric and piezoelectric properties of (001) PMN-29PT single crystals, three different types of PMN-29PT samples were prepared using the solid-state single crystal growth (SSCG) method: high density crystal [99%], low density crystal [95%], and high density crystal doped with Mn [98.5%]. When their thickness decreased from 0.5 mm to 0.05 mm, their dielectric constant ($K_3{^T}$), piezoelectric constants ($d_{33}$ and $g_{33}$), and electromechanical coupling factor ($k_t$) decreased continuously. However, their dielectric loss (tan ${\delta}$) increased. The addition of Mn to PMN-PT induced an internal bias electric field ($E_I$), increased the coercive electric field ($E_C$), and prevented local depoling. Therefore, Mn-doped PMN-PT crystals show high stability as well as high performance, even in the form of very thin plates (< 0.2 mm), and thus are suitable for application to high frequency composites, medical ultrasound probes, non-destructive testing devices (NDT), and flexible devices.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.290-293
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• 2009

We both theoretically and experimentally investigated the luminescence wavelength control of the $Eu^{2+}$-doped $CaAlSiN_3$ (CASN:$Eu^{2+}$). To modify emission wavelength, Na-doped and Mg-doped CASN:$Eu^{2+}$ (NCASN:$Eu^{2+}$ and MCASN:$Eu^{2+}$) have been studied. According to quantum chemistry calculation result, we synthesized NCASN:$Eu^{2+}$ and MCASN:$Eu^{2+}$. NCASN:$Eu^{2+}$ and MCASN:$Eu^{2+}$ showed shorter emission wavelength than that of CASN:$Eu^{2+}$.