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http://dx.doi.org/10.4313/JKEM.2007.20.7.620

Effects of Gd2O3 Addition on Optical and Electrical Properties of MgO Films as a Protective Layer for AC PDPs  

Kim, Chang-Il (요업기술원 전자부품소재본부 전자부품팀)
Lim, Eun-Kyeong (요업기술원 전자부품소재본부 전자부품팀)
Park, Young-Jun (요업기술원 전자부품소재본부 전자부품팀)
Lee, Young-Jin (요업기술원 전자부품소재본부 전자부품팀)
Paik, Jong-Hoo (요업기술원 전자부품소재본부 전자부품팀)
Choi, Eun-Ha (광운대학교 전자물리학과)
Juang, Seok (㈜씨앤켐 기술연구소)
Kim, Jeong-Seok (㈜씨앤켐 기술연구소)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.7, 2007 , pp. 620-625 More about this Journal
Abstract
The effects of $Gd_2O_3$ addition and sintering condition on optical and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. Doped MgO films prepared by the e-beam evaporation have a higher ${\Upsilon}$ (secondary electron emission coefficient) than pure MgO protective layer. Relative density and grain size increased with amount of $Gd_2O_3$ up to 100 ppm and then decreased further addition. These results showed that discharge properties and optical properties of MgO protective layers seemed to be closely related with microstructure factors such as relative density and grain size. Good optical and electrical properties of ${\Upsilon}$ of 0.138, surface roughness of 5.77 nm and optical transmittance of 95.76 % were obtained for the MgO+100 ppm $Gd_2O_3$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.
Keywords
PDP; Protective layer; MgO; Doping;
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