• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.6
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• pp.235-242
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• 2018

High temperature electrical conductivity of Aluminum Nitride (AlN) ceramics sintered with $Y_2O_3$ as a sintering aid has been investigated with respect to various sintering conditions and MgO-dopant. When magnesium oxide is added as a dopant, liquid glass-film and crystalline phases such as spinel, perovskite are formed as second phases, which affects their electrical properties. According to high temperature impedance analysis, MgO doping leads to reduction of activation energy and electrical resistivity due to AlN grains. On the other hand, the activation energy and electrical resistivity due to grain boundary were increased by MgO doping. This is a result of the formation of liquid glass film in the grain boundary, which contains Mg ions, or the elevation of schottky barrier due to the precipitation of Mg in the grain boundary. For the annealed sample of MgO doped AlN, the electrical resistivity and activation energy were increased further compared to MgO doped AlN, which results from diffusion of Mg in the grains from grain boundary as shown in the microstructure.

• Journal of the Korean institute of surface engineering
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• v.42 no.2
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• pp.68-72
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• 2009

We report on the growth of $CuCrO_2$ films using pulsed laser deposition and their structural and electrical transport properties. $CuCrO_2$ thin films were doped with 5 at% Mg for p-type properties. Epitaxial films of $CuCr_{0.95}Mg_{0.05}O_2$ were grown on c-plane sapphire substrates. The effects of growth temperature and oxygen pressure on film properties were investigated. The main phase of delafossite $CuCr_{0.95}Mg_{0.05}O_2$ was appeared above the growth temperature of $600^{\circ}C$. The thin film grown at $500^{\circ}C$ showed the highest conductivity, reaching 19.6 S/cm while higher growth temperatures over $500^{\circ}C$ led to lower conductivity; the thin film grown at $700^{\circ}C$ showed 0.02 S/cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.4
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• pp.256-261
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• 2021

Indium-doped Mg_0.05Zn_0.95O thin films were deposited on glass substrates by a sol-gel method. Three types of indium precursors such as indium chloride, indium acetate, and indium nitrate were used as doping sources. Physical properties of fabricated thin films were analyzed through XRD (x-ray diffraction), UV-vis spectrophotometer, Hall effect measurement, and EDS (energy dispersive x-ray spectroscopy). All In-doped thin films grown in this study exhibited a preferred orientation of (002) with over 80% transmittance. The results showed that the Mg_0.05Zn_0.95O thin film from indium chloride as the indium precursor has higher crystallinity and transmittance with lower resistivity when compared with those from other indium precursors.

• Journal of the Optical Society of Korea
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• v.2 no.2
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• pp.54-57
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• 1998

A noncollinear-phase-matching cone of second harmonic generation(SHG) was observed in a LiNbO3 crystal doped with l mol% MgO. Birefringence refractive indices can be accurately evaluated by analysing the temperature phase matching characteristic for SHG combined with the measurement of the half cone angle. The electro-optic coefficient can also be determined form the observed change of the half cone angle when a DC electric field is applied along the optic axis.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.961-964
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• 2008

The MgO protective layer of PDP has a strong influence on address delay. The relation, however, is not clearly understood due to the difficulty of analysis which is caused by surface charging. This paper suggests a way to avoid the charging problem and shows the correlation between workfunction measured by UPS and address delay.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.29.1-29.1
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• 2000

• 한국초전도학회:학술대회논문집
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• 2007.07a
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• pp.92-92
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• 2007

• 한국초전도학회:학술대회논문집
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• 2007.07a
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• pp.83-83
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• 2007

• 한국초전도학회:학술대회논문집
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• 2007.07a
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• pp.67-67
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• 2007

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.198-198
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• 2009