• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.349-349
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• 2013

질화물 기반 물질은 발광다이오드의 효율 향상과 함께 널리 연구되는 물질의 하나이다. 그러나, 고유의 물성적 특성으로 인한 압전전기장 효과는 넓은 가시광영역에서 궁극적 효율 달성을 위한 장애가 되고 있다. 이를 극복하기 위한 방법 중 하나는 나노 구조이며, 특히 비극성면을 통한 나노구조의 구현은 압전전기장 효과를 제거할 수 있는 장점이 있다. 그러나, 현재까지 이를 위한 질화물 나노로드의 구현은 보통의 경우 발생하는 반극성면의 발현으로 인해 기술적 어려움이 많았다. 이를 위해 제시되는 방법 중 하나인 반복적 성장 기법을 통한 본 그룹의 성공적 나노로드의 구현과 함께, nucleation 조건의 변화에 따른 성장 과정을 분석하여 미래의 고효율 3차원 나노구조 발광 소자를 위한 단서를 제공하고자 한다. Fig. 1은 수소(a)와 질소(b)를 850도부터 1,050도까지 성장 온도를 달리하여 성장했을 때의 모양 변화를 나타내며 이를 통한 GaN nanorod 성장 영향에 대하여 논하고자 한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• 한국재료학회지
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• 제7권2호
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• pp.107-113
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• 1997

플라즈마를 이용한 유기금속 화학증착법에 의해 $Pt/Ti/SiO_{2}/Si$기판위에 $SrBi_{2}Ta_{2}O_{9}(SBT)$박막이 제조되었다. X-ray회절패턴, 미세구조 및 조성분석으로부터 Sr과 Ta bubbling 온도는 $120^{\circ}C$로 고정되었으며 Bi bubbling온도가 변화되었다. Bi bubbling 온도 $130^{\circ}C$에서 얻어진 SBT 박막의 유전상수 및 유전손실은 100kHz에서 각각 150과 0.02이며 누설전류 밀도는 20kV/cm 에서 약 $1.0{\times}10^{-8}A/cm^2$이었다. 이 조건에서 얻어진 SBT박막의 누설전류 특성은 poole-Frenkel기구에 의해서 지배된다. $550^{\circ}C$에서 annealing된 SBT박막의 잔류분극($_{2}P_{r}$)은 $9{\mu}C/cm^2$이며 항전계는 70kV/cm이었다.

• 한국재료학회지
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• 제13권11호
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• pp.737-741
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• 2003

Polycrystalline $Ti_{l-x}$ $Co_{x}$ $O_2$thin films on $SiO_2$ (200 nm)/Si (100) substrates were prepared using liquid-delivery metalorganic chemical vapor deposition. Microstructures and ferromagnetic properties were investigated as a function of doped Co concentration. Ferromagnetic behaviors of polycrystalline films were observed at room temperature, and the magnetic and structural properties strongly depended on the Co distribution, which varied widely with doped Co concentration. The annealed $Ti_{l-x}$ $Co_{x}$ $O_2$thin films with $x\leq$0.05 showed a homogeneous structure without any clusters, and pure ferromagnetic properties of thin films are only attributed to the X$l-x_{l-x}$ $Co_{x}$X$O_2$phases. On the other hand, in case of thin films above x = 0.05, Co-rich clusters formed in a homogeneous $Ti_{l-x}$ $Co_{x}$ $O_2$phase, and the overall ferromagnetic (FM) properties depended on both FMTCO and FMCo. Co-rich clusters with about 10-150 nm size decreased the value of Mr (the remanent magnetization) and increased the saturation magnetic field.

• 한국재료학회지
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• 제14권9호
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• pp.619-626
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• 2004

Pulsed metalorganic chemical vapor deposition (MOCVD) of conformal copper seed layers, for the electrodeposition Cu films, has been achieved by an alternating supply of a Cu(I) source and $H_2$ reactant at the deposition temperatures from 50 to $100^{\circ}C$. The Cu thickness increased proportionally to the number of cycles, and the growth rate was in the range from 3.5 to $8.2{\AA}/cycle$, showing the ability to control the nano-scale thickness. As-deposited films show highly smooth surfaces even for films thicker than 100 nm. In addition about a $90\%$ step coverage was obtained inside trenches, with an aspect ratio greater than 30:1. $H_2$, introduced as a reactant gas, can play an active role in achieving highly conformal coating, with increased grain sizes.

• 한국세라믹학회지
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• 제35권1호
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• pp.88-96
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• 1998

The structural and electrical properties of titanium dioxide(TiO2) thin films deposited on p-type (100) si and 4$^{\circ}$off(100) Si substartes by metalorganic chemical vapor deposition (MOCVD) have been studied with post rapid thermal annealing. TiO2 thin films of anatase phase were grown at 300-500$^{\circ}C$ using titanium post rapid thermal annealing at a temperature of 800$^{\circ}C$ for 30sec. rutile phase was observed in the condition of the deposition temperature over 350$^{\circ}C$ in the ambient air atmosphere and at 500$^{\circ}C$ in cacuu,. SEM and AFM study show-ed surface roughness were increased slightly from 40${\AA}$to 55${\AA}$ after annealing due to grain growth and phase transformation. From capacitane-voltage measurement of Al/TiO2./p-Si structure after annealing we obtained ideal capacitance-voltage characteristics of MOS structure with dielectric constant of 16-22 in case of (100) Si and about 30- in case of 4$^{\circ}$off(100) Si but showed the higher leakage current.

• 대한기계학회논문집B
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• 제32권3호
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• pp.181-189
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• 2008

GaAs film growth process from trimethylgallium(TMGa) and tertiary-butylarsine(TBAs) using a horizontal MOCVD reactor was numerically studied to explain the experimental result that the decreasing surface reaction rate as the increasing partial pressure of group III species. Using the non-linear model based on the Langmuir isotherm which considers the adsorption and desorption of molecules, film deposition over the entire reactor scale was predicted by computational fluid dynamics (CFD) with the aid of the parameters obtained from the selective area growth (SAG) technique. CFD Results using the non-linear surface reaction model with the parameters determined from the SAG experiments predicted too high film growth rate compared to the measured values at the downstream region where the temperature was decreased abruptly. The pairs of ($k_s^n$, K) from the numerical simulations was $(2.52{\times}10K^{-6}mol/m^2/s,\;1.6{\times}10^5m^3/mol)$, whereas the experimentally determined was $(3.58{\times}10^{-5}mol/m^2/s,\;6.9{\times}10^5m^3/mol)$.

• 대한전자공학회논문지SD
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• 제37권12호
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• pp.11-17
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• 2000

저압 유기금속화학기상증착법을 이용하여 효율적인 청색 발광을 하는 InGaN/GaN multiple quantum wells(MQWs)을 성장시키고, InGaN/GaN MQWs의 광학적 및 계면 구조 특성을 고찰하였다. 보다 효율적인 청색 발광을 하는 InGaN/GaN MQWs을 성장시키기 위하여, MQWs의 성장온도 및 InGaN 우물층과 GaN 장벽층의 두께를 변화시켜 최적 조건을 확립하였다. 특히, GaN 장벽층의 두께 변화가 InGaN 우물층과 GaN 장벽층간 계면의 구조적 특성에 지대한 영향을 미침을 확인하였다. X-ray 회절분석결과와 고분해능의 투과전자현미경 사진 분석으로부터 MQW 구조의 InGaN 우물층과 GaN 장벽층간의 계면이 매우 급준함을 발견할 수 있었다. 또한, 상온 PL 스펙트럼에서 72.6meV의 매우 좁은 반치폭을 갖는 단일 피크가 463.5nm에서 확인되었다.

• 한국진공학회지
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• 제10권3호
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• pp.341-349
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• 2001

수평형 MOCVD (유기금속 화학기상법) 제조공정에서 유체유동, 열전달 및 화학종의 국소적 질량분율을 고찰하기 위한 수치계산을 수행하였다. 수송가스로 작용하는 수소가스와 TMG및 암모니아의 농도분포를 예측함으로서 혼합과정을 분석하고 필름성장의 균일성을 예측하였다. 농도분포에 미치는 입구크기, 위치, 질량유량 및 벽면의 경사각도의 영향이 검토되었다. 계산결과로서 무차원 대류 열전달 계수 Nu에 의해 반응물의 농도분포를 정성적으로 예측할 수 있었으며, 균일한 필름성장을 위한 최적 질량유량, 벽면 경사도 및 입구조건이 제시되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.122-122
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• 2010

ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.