• Korean Journal of Materials Research
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• v.14 no.6
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• pp.399-401
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• 2004

InGaAs/GaAs quantum wire structures were grown by low pressure metalorganic chemical vapor deposition by using selective area epitaxy.$ In_{ 0.2}$$Ga_{0.8}$ As/GaAs quantum wire structures were grown on a $SiO_2$ masked GaAs substrate. Quantum wire structures with sharp tips and smooth side walls were grown. We have grown InGaAs/GaAs quantum wire structures using variously opened width of the $SiO _2$ mask. Even though the opening widths of $SiO_2$ masked GaAs substrate were different, similar shapes of triangular structures were grown. Using various kinds of differently opened $SiO_2$ masked area, it would be possible to grow quantum wire structures with various thicknesses. The quantum wire structures are formed near the pinnacle of the triangular structure. Therefore, the fabrication of the uniquely designed integrated optical devices which include light emitting sources of multiple wavelength is possible.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.190-194
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• 2002

InN/GaN multi-layers were grown by metalorganic chemical vapor deposition(MOCVD) in order to get the appropriate structure for an high power blue-green light emitting diode(LED), and effects of growth conditions (growth temperature, pressure, and $trimethylindium(TMIn)-NH_3-N_2\; flow\; rare)$ on the integrated photoluminescence (PL) intensity and PL peak energy in InN/GaN multi-layers were investigated. The optimized growth conditions with the highest integrated PL intensity for InN/GaN multi-layers were obtained: the growth temperature at $780^{\circ}C$, the growth pressure at 325 Torr, the TMIn flow rate with 150 $m\ell$/min, the $NH_3$flow rate with 3.2 ι/min, and $N_2$ flow rate with 2 ι/min.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.81-86
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• 2001

We have investigated surface photovoltage characteristics of InGaAs grown by metalorganic chemical vapor deposition (MOCVD) method on semi-insulating GaAs. The splitted SPV signals from the substrate and epilayer were observed. The band gap energy of InGaAs was about 1.376 eV, The In composition(x) was determined by Pan's composition formula. The photovoltage gradually decreases with increasing frequency. This is because the transfer of charge from the surface states reduces. From the temperature dependent SPV measurement, we obtained Varshni and temperature coefficients. In spectrum of etched sample at 300 K, the 'A' peak below $E_o(GaAs)$ is related with residual impurity during sample growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.25-26
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• 2008

Electrical properties of Pt/Ti/Au/Pt contacts to n-GaAs were characterized as the V/III ratio of GaAs grown by metalorganic chemical vapor deposition were 25, 50, and 100, respectively. The samples have been annealed during 30sec at 350 and $450^{\circ}C$ in rapid thermal annealing, and those specific contact resistance investigated by using transmission line method. According to experimental results, the specific contact resistance between p-metal and GaAs was decreased as the V/III ratio was lower. These results indicate that Si doping concentration of GaAs increased as the vacancy of V-series of GaAs was high.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.485-490
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• 2003

We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.

• Korean Journal of Materials Research
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• v.16 no.6
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• pp.394-399
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• 2006

Ferroelectric $HoMnO_3$ thin films were deposited on the Si(100) substrate at $700^{\circ}C$ for 2 hrs by metalorganic chemical vapor deposition (MOCVD) and post-annealed at 850oC by rapid thermal process (RTP). Electrical properties and crystalline phases of $HoMnO_3$ thin films were investigated as a function of postannealing time. Single phase of hexagonal symmetry with c-axis preferred orientation was obtained from $HoMnO_3$ thin films post-annealed at $850^{\circ}C$ for 5 min, while the c-axis preferred orientation was decreased with the increase of post-annealing time, and the thin films post-annealed at $850^{\circ}C$ for 15 min showed the mixture phases of hexagonal and orthorhombic symmetry. P-E (Polarization-Electric field) hysteresis loop of ferroelectric $HoMnO_3$ thin films was observed only for the single phase of hexagonal symmetry, but that was not observed for the mixture phases of the hexagonal and orthorhombic symmetry, which was discussed with the bond valence of Mn ion of crystalline phase. Leakage current density was dependent on the microstructure of thin films as well as the change of valence of Mn ion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.59-59
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• 2007

최근 GaN계 LED를 대체할 만한 물질로 주목받고 있는 ZnO는 단결정 박막성장의 어려움, 동일접합 LED 소자구현을 위한 p-ZnO 성장의 어려움 3원계 합금제작의 어려움 등으로 소자제작에 있어 고전을 하고 있다. 특히 이러한 문제점을 극복하고자 하는 방안으로 양자 제한 효과, 탁월한 결정성, self-assembly, internal stress 등의 새로운 기능성을 지닌 ZnO 나노구조가 제시되었다. 하지만 나노구조를 이용한 다이오드 제작에서도 금속전극의 접합이라는 문제의 벽에 가로막혀 있다. 본 실험에서는 자체 개발된 MOCVD 장비를 이용한 일차원 ZnO 나노선을 성장한 이후 연속적으로 박막을 성장하여 금속전극의 접합을 시도하였다. 이종접합구조 뿐만 아니라 일차원 및 이차원 구조의 복합구조는 일반 다결정 박막보다 결정성에서 우수한 특성을 보였으며, 다이오드 제작시에 높은 효율을 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.150-153
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• 2004

본 논문에서는 780 nm 고출력 레이저 다이오드의 신뢰성을 향상시키기 위하여 DLTS(deep level transient spectroscopy)을 이용하여 MOCVD(metalorganic chemical vapor deposition) 성장 조건 변화에 따른 $Al_{0.48}Ga_{0.52}As$와 $Al_{0.1}Ga_{0.9}As$ 물질에서의 깊은준위(deep level)의 거동을 조사하였다. DLTS 측정결과, MOCVD로 성장된 막에서만 나타나는 결함(defect)으로 추정되는 trap A(0.3 eV), DX center로 알려진 trap B, 갈륨(Ga) vacancy와 산소(O2) 원자의 복합체(complex)에 의한 결함인 trap D(0.6 eV) 및 EL2 라고 불리우는 trap E(0.9 eV)의 네 가지 깊은준위들이 관측되었고, 성장 조건의 변화에 따라 깊은 준위들의 농도가 감소하는 것을 관측함으로써 최적 성장 조건을 찾을 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.170-170
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• 2010

a-plane 혹은 m-plane면을 사용하는 무분극 GaN LED는 c축 방향으로 발생하는 분극의 영향을 받지 않기 때문에 분극 GaN LED에 비해 높은 내부 양자효율을 가진다. 또한 무분극 GaN는 상대적으로 고농도의 p-type 도핑이 가능하기 때문에 광효율을 높일 수 있다. 하지만 이와 같은 장점에도 불구하고 무분극 GaN는 성장모드의 비대칭으로 인해 높은 결정성과 mirror-like한 표면을 얻기가 힘들다. 본 논문에서는 Metalorganic chemical-vapor deposition (MOCVD) 장비를 사용하여 r-plane 사파이어 기판위에 a-plane GaN을 성장시켰다. 일반적으로 사용하는 저온에서의 nucleation layer 성장 대신 $1050^{\circ}$의 고온에서 성장 시킨후 일반적으로 사용하는 two-step 성장방법으로 그위에 5.5um정도의 GaN을 성장시켰다. 성장시 Trimethylgallium(TMGa)와 암모니아를 각각 Ga과 N 소스로 이용하였고 캐리어 가스는 수소를 사용하였다. 비대칭 결정성을 줄이기 위해 3D island growth mode에서의 성장조건을 바꾸어 c축과 m축 방향으로의 X-ray 결정성(FWHM) 차이가 564 arcsec에서 206 arcsec로 변화 시켰다. Normarski 현미경으로 표면을 관찰한 결과 v-defect이 없고 a-plane GaN에서 볼 수 있는 전형적인 줄무늬 패턴을 가지는 표면을 얻었으며 광학적 특성을 보기 위해 Photoluminescence (PL)을 측정하였다.

• Korean Journal of Materials Research
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• v.31 no.2
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• pp.92-96
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• 2021

We report the growth and enhanced photoelectrochemcial (PEC) water-splitting reactivity of few-layer MoS2 nanosheets on TiO2 nanowires. TiO2 nanowires with lengths of ~1.5 ~ 2.0 ㎛ and widths of ~50~300 nm are synthesized on fluorine-doped tin oxide substrates at 180 ℃ using hydrothermal methods with Ti(C4H9O)4. Few-layer MoS2 nanosheets with heights of ~250 ~ 300 nm are vertically grown on TiO2 nanowires at a moderate growth temperature of 300 ℃ using metalorganic chemical vapor deposition. The MoS2 nanosheets on TiO2 nanowires exhibit typical Raman and ultraviolet-visible light absorption spectra corresponding to few-layer thick MoS2. The PEC performance of the MoS2 nanosheet/TiO2 nanowire heterostructure is superior to that of bare TiO2 nanowires. MoS2/TiO2 heterostructure shows three times higher photocurrent than that of bare TiO2 nanowires at 0.6 V. The enhanced PEC photocurrent is attributed to improved light absorption of MoS2 nanosheets and efficient charge separation through the heterojunction. The photoelectrode of the MoS2/TiO2 heterostructure is stably sustained during on-off switching PEC cycle.