• 대한금속재료학회지
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• 제48권3호
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• pp.256-261
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• 2010

In this work, high-k dielectric stacks of $HfO_2$ and $HfO_2$/$Al_2O_3$/$HfO_2$ (HAH) were deposited on $SiO_2/Si$ substrates by atomic layer deposition as charge trapping layers in charge trapping devices. The structural stability and the charge trapping characteristics of such stacks were investigated using Metal-Alumina-Hafnia-Oxide-Silicon (MAHOS) structure. The surface roughness of $HfO_2$ was stable up to 11 nm with the insertion of 0.2 nm thick $Al_2O_3$. The effect of the thickness of the HAH stack and the thickness of intermediate $Al_2O_3$ on charge trapping characteristics were investigated for MAHOS structure under various gate bias pulse with duration of 100 ms. The threshold voltage shift after programming and erase showed that the memory window was increased with increasing bias on gate. However, the programming window was independent of the thickness of HAH charge trapping layers. When the thickness of $Al_2O_3$insertion increased from 0.2 nm to 1 nm, the erase window was decreased without change in the programming window.

• Journal of Radiation Protection and Research
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• 제47권3호
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• pp.152-157
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• 2022

Background: The hemi-body electron beam irradiation (HBIe^-) technique has been proposed for the treatment of mycosis fungoides. It spares healthy skin using an electron shield. However, shielding electrons is complicated owing to electron scattering effects. In this study, we developed a thimble-like head bolus shield that surrounds the patient's entire head to prevent irradiation of the head during HBIe^-. Materials and Methods: The feasibility of a thimble-like head bolus shield was evaluated using a simplified Geant4 Monte Carlo (MC) simulation. Subsequently, the head bolus was manufactured using a three-dimensional (3D) printed mold and Ecoflex 00-30 silicone. The fabricated head bolus was experimentally validated by measuring the dose to the Rando phantom using a metal-oxide-semiconductor field-effect transistor (MOSFET) detector with clinical configuration of HBIe^-. Results and Discussion: The thimble-like head bolus reduced the electron fluence by 2% compared with that without a shield in the MC simulations. In addition, an improvement in fluence degradation outside the head shield was observed. In the experimental validation using the inhouse-developed bolus shield, this head bolus reduced the electron dose to approximately 2.5% of the prescribed dose. Conclusion: A thimble-like head bolus shield for the HBIe^- technique was developed and validated in this study. This bolus effectively spares healthy skin without underdosage in the region of the target skin in HBIe^-.

• 센서학회지
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• 제31권5호
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• pp.348-352
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• 2022

Hydrogen gas (H₂) which is odorless, colorless is attracting attention as a renewable energy source in varions applications but its leakage can lead to disastrous disasters, such as inflammable, explosive, and narcotic disasters at high concentrations. Therefore, it is necessary to develop H₂ gas sensor with high performance. In this paper, we confirmed that H₂ gas detection ability of SnO₂ based H₂ gas sensor along with thermal treatment effect of SnO₂. Proposed SnO₂ based H₂ gas sensor is fabricated by MEMS technologies such as photolithgraphy, sputtering and lift-off process, etc. Deposited SnO₂ thin films are thermally treated in various thermal treatement temperature in range of 500-900 ℃ and their H₂ gas detection ability is estimatied by measuring output current of H₂ gas sensor. Based on experimental results, fabricated H₂ gas sensor with SnO₂ thin film which is thermally treated at 700 ℃ has a superior H₂ gas detection ability, and it can be expected to utilize at the practical applications.

• 멤브레인
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• 제32권1호
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• pp.33-42
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• 2022

성장하는 산업화는 심각한 수질 오염으로 이어진다. 폐수로 배출되는 약품과 섬유산업에서 나오는 유기배출물은 환경과 생명에게 악영향을 미친다. 항균치료에 사용되는 항생제가 폐수에 존재하면 인체에 매우 해로운 약제 내성균의 성장을 야기하게 된다. 섬유산업에서 사용되는 유기염료 분자의 제조에는 다양한 유기 저분자가 사용된다. 이러한 분자들은 인쇄 및 염색 산업의 폐수 배출물에 존재하여 분해가 잘 이루지지 않는다. 이러한 문제들을 해결하기 위해 광분해성 촉매를 분리막에 도입하고 폐수를 처리한다. 이 과정을 통해 유기 분자는 광분해되며 동시에 분해된 화합물들은 분리막을 통과하여 분리된다. 이산화티타늄(TiO₂)은 뛰어난 광촉매 역할을 하는 반도체이다. 다른 전이 금속 산화물과 화합물을 만들고 고분자 막에 도입하여 광촉매 능력을 증가시킨다. 본 총설에서는 광촉매성 분리막에 의한 염료 및 약물 분자의 분해에 대해 논의한다.

• 센서학회지
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• 제32권5호
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• pp.290-294
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• 2023

Among various types of harmful gases, hydrogen sulfide is a strong toxic gas that is mainly generated during spillage and wastewater treatment at industrial sites. Hydrogen sulfide can irritate the conjunctiva even at low concentrations of less than 10 ppm, cause coughing, paralysis of smell and respiratory failure at a concentration of 100 ppm, and coma and permanent brain loss at concentrations above 1000 ppm. Therefore, rapid detection of hydrogen sulfide among harmful gases is extremely important for our safety, health, and comfortable living environment. Most hydrogen sulfide gas sensors that have been reported are electrical resistive metal oxide-based semiconductor gas sensors that are easy to manufacture and mass-produce and have the advantage of high sensitivity; however, they have low gas selectivity. In contrast, the electrochemical sensor measures the concentration of hydrogen sulfide using an electrochemical reaction between hydrogen sulfide, an electrode, and an electrolyte. Electrochemical sensors have various advantages, including sensitivity, selectivity, fast response time, and the ability to measure room temperature. However, most electrochemical hydrogen sulfide gas sensors depend on imports. Although domestic technologies and products exist, more research is required on their long-term stability and reliability. Therefore, this study includes the processes from electrode material synthesis to sensor fabrication and characteristic evaluation, and introduces the sensor structure design and material selection to improve the sensitivity and selectivity of the sensor. A sensor case was fabricated using a 3D printer, and an Ag reference electrode, and a Pt counter electrode were deposited and applied to a Polytetrafluoroethylene (PTFE) filter using PVD. The working electrode was also deposited on a PTFE filter using vacuum filtration, and an electrochemical hydrogen sulfide gas sensor capable of measuring concentrations as low as 0.6 ppm was developed.

• 전기전자학회논문지
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• 제28권2호
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• pp.174-179
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• 2024

본 논문에서는 극저온 냉동기를 사용하여 양자 컴퓨터 제어 및 read-out을 위한 CMOS 기반의 집적회로 측정 셋업을 제시한다. CMOS 회로는 큐비트 안정성과 잡음 감소를 위해 3~5 K의 극저온에서 작동해야한다. 기존의 극저온 측정 시스템은 액체 헬륨 담금질이며, 이는 소모성 자원을 장기간 사용하기에 비용이 많이 소모된다. 따라서 헬륨 가스를 장기간 사용해도 비용이 들지 않는 폐쇄 사이클 냉동기(Closed Cycle Refrigerator, CCR) 기반의 극저온 측정 시스템에 대해 설명한다. Gifford-Mcmahon(G-M) 방식의 극저온 냉각기를 이용하여 4.7 K에 도달할 수 있는 냉동기를 구축하였다. 이는 가격 경쟁력이 우수한 극저온 냉동기 셋업이 될 것으로 기대된다.

• Archives of Metallurgy and Materials
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• 제64권2호
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• pp.695-700
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• 2019

Mordenite-zeolite supported Ca-Cu and Ba-Cu catalysts (Ca-Cu/MOR and Ba-Cu MOR) were successfully fabricated for direct decomposition of both NF₃ and N₂O gases contained in waste gas stream of (semiconductor) electronics industry. N₂O conversion rates of Ca-Cu and Ba-Cu catalysts were 79 and 86%, respectively, at 700℃ and 1 atm under space velocity of 5000 h^-1. The Ca-Cu catalyst was especially noteworthy in that its capability of converting N₂O could be maintained even after its exposure to co-feeding NF₃ gas constituent in the waste gas stream. Compositional and surface morphological analyses of the Ca-Cu and Ba-Cu catalysts were made before and after exposure to the waste gas stream to examine any noticeable degradation or change of the catalysts. Unlike Ba-Cu catalyst, SiO₂ constituent of the Ca-Cu catalyst was found to remain immune to the NF₃-cofeeding waste gas stream, casting a positive prospect for superior and steady N₂O decomposition performance via maintenance of its structural integrity.

• 전기전자학회논문지
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• 제22권1호
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• pp.180-184
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• 2018

산화갈륨 ($Ga_2O_3$)과 탄화규소 (SiC)는 넓은 밴드 갭 ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV)과 높은 임계전압을 갖는 물질로서 높은 항복 전압을 허용한다. 수직 DMOSFET 수평구조에 비해 높은 항복전압 특성을 갖기 때문에 고전압 전력소자에 많이 적용되는 구조이다. 본 연구에서는 2차원 소자 시뮬레이션 (2D-Simulation)을 사용하여 $Ga_2O_3$와 4H-SiC 수직 DMOSFET의 구조를 설계하였으며, 항복전압과 저항이 갖는 trade-off에 관한 파라미터를 분석하여 최적화 설계하였다. 그 결과, 제안된 4H-SiC와 $Ga_2O_3$ 수직 DMOSFET구조는 각각 ~1380 V 및 ~1420 V의 항복 전압을 가지며, 낮은 게이트 전압에서의 $Ga_2O_3-DMOSFET$이 보다 낮은 온-저항을 갖고 있지만, 게이트 전압이 높으면 4H-SiC-DMOSFET가 보다 낮은 온-저항을 갖을 수 있음을 확인하였다. 따라서 적절한 구조와 gate 전압 rating에 따라 소자 구조 및 gate dielectric등에 대한 심화 연구가 요구될 것으로 판단된다.

• Korean Chemical Engineering Research
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• 제60권2호
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• pp.313-319
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• 2022

HfO₂을 게이트 산화막으로 갖는 AlGaN/GaN 기반 고이동도 전계효과 트랜지스터(high electron mobility transistor, HEMT)의 노멀리 오프(normally-off) 작동 구현을 위하여 게이트 리세스(gate-recess) 깊이에 따른 소자 특성이 시뮬레이션을 통하여 분석되었다. 전통적인 HEMT 구조, 3 nm의 두께를 갖는 게이트 리세스된 HEMT 구조, 게이트 영역에 AlGaN 층을 갖지 않는 HEMT 구조가 모사되었다. 전통적인 HEMT 구조는 노멀리 온(normally-on) 특성을 나타내었으며, 0 V의 게이트 전압 및 15 V의 드레인 전압 환경에서 0.35 A의 드레인 전류 특성을 나타내었다. 3 nm의 두께를 갖는 게이트 리세스된 HEMT 구조는 2DEG(2-dimensional electron gas) 채널의 전자 농도 감소로 인해, 같은 전압 인가 조건에서 0.15 A의 드레인 전류 값을 보였다. 게이트 영역에 AlGaN 층을 갖지 않는 HEMT 구조는 뚜렷한 노멀리 오프 동작을 나타내었으며, 0 V의 동작전압 값을 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.