• 제목/요약/키워드: Metal thin-film

검색결과 1,247건 처리시간 0.029초

Effects of Temperature Coefficients for Dielectric Constants on Thermoreflectances and Thermal Responses of Metal Thin Films Exposed to Ultrashort Pulse Laser Beams

  • Seungho Park
    • International Journal of Air-Conditioning and Refrigeration
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    • 제10권1호
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    • pp.1-9
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    • 2002
  • Effects of temperature coefficients fur dielectric constants on transient reflectances and thermal responses have been investigated for a metal(gold) thin-film during ultrashort pulse laser heating. Heating processes are simulated using the conventional conduction model(parabolic one-step, POS), the parabolic tow-step model(PTS), the hyperbolic two-step model(HTS). Results fro the HTS model are very similar to those from the PTS model, since the laser heating time in this study is considerably greater than the electron relaxation time. PTS and HTS models, however, result in completely different temperature profiles from those obtained by the POS model due to slow electron-lattice interactions compared to laser pulse duration. Transient reflectances are directly estimated from the linear relationship between electron temperature and complex dielectric constants, while conventional approaches assume that the change in reflectances is proportional to that in temperatuer. Reflectances at the front surface vary considerably for various dielectric constants, while those at the rear surface remain unchanged relatively.

Sol-gel Self-patterning 기술을 이용한 광감응성 Sr0.9Bi2.1Ta2O9 박막의 제조기술에 관한 연구 (A Study on Fabrication of Photosensitive Sr0.9Bi2.1Ta2O9 Thin Film by Sol-gel Self-patterning Technique)

  • 양기호;박태호;임태영;오근호;김병호
    • 한국세라믹학회지
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    • 제39권8호
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    • pp.750-757
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    • 2002
  • Photosensitive sol solution을 이용한 self pattern된 박막은 photoresist/dry etching process에 비해 박막의 제조과정이 간단하다는 장점을 가지고 있다. 이 연구에서는 photosensitive sol solution을 이용하여 spin coating법에 의해 $Sr_{0.9}Bi_{2.1}Ta_2O_9$의 조성을 갖는 강유전체 박막을 제조하였으며 출발원료는 $Sr(OC_2H_5)_2,\;Bi(TMHD)_3$$Ta(OC_2H_5)_5$를 사용하였다. SBT 박막에 UV 노광시간을 증가시킴에 따라 M-O-M 결합이 생성되면서 metal ${\beta}$-diketonate의 UV 흡수 피크 강도는 감소되었고 SBT 박막에 UV 조사에 따른 용해도 차이가 생기면서 fine patterning을 얻을 수 있었다. 또한 UV가 조사된 SBT 박막의 강유전 특성이 UV가 조사되지 않은 것보다 우수하였다.

Gold Nanoparticles-embedded MAPbI3 Perovskite Thin Films

  • Kim, Hyojung;Byun, Hye Ryung;Kim, Bora;Jeong, Mun Seok
    • Journal of the Korean Physical Society
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    • 제73권11호
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    • pp.1725-1728
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    • 2018
  • We synthesized the gold nanoparticles (Au NPs)-embedded methylammonium lead iodide ($MAPbI_3$) film for the first time. The effects of metal nanoparticles on $MAPbI_3$ perovskite were systematically studied using UV-Vis absorption and photoluminescence (PL) measurements. As a result, the 20-nm-sized Au NPs-embedded $MAPbI_3$ film exhibited a 4.15% higher absorbance than the bare $MAPbI_3$ film. Moreover, the average PL intensity of the Au NPs-embedded $MAPbI_3$ film increased by about 75.25% over the bare $MAPbI_3$ film. Therefore, we have confirmed that addition of the Au NPs has a positive effect on the optical properties of $MAPbI_3$, and we believe that this study will provide a basic insight into the metal nanoparticles-embedded perovskite thin films for the future optoelectronic applications.

포토리소그래피 공정으로 제작된 터치스크린패널용 금속메시 (Thin Metal Meshes for Touch Screen Panel Prepared by Photolithography)

  • 김서한;송풍근
    • 한국표면공학회지
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    • 제49권6호
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    • pp.575-579
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    • 2016
  • The metal mesh films with thickness of 1.0, 1.5, $2.0{\mu}m$ were prepared by photolithography using Ag, Al, and Cu metals. Every metal films were showed C(111) preferred orientation and Ag showed the lowest resistivity and followed by Al and Cu. The transmittance of almost films were higher than 90%. But, the Ag film with thickness of $2.0{\mu}m$ was delaminated during photolithography process due to low adhesion. So, Cu and Ti metal films were introduced under Ag film to improve adhesion property. The Cu film showed higher adhesion properties compared to Ti film. Furthermore, the Ti films that deposited on Ag film showed higher acid resistance.

구리박막에서 수은 클러스터의 충돌거동에 대한 분자동역학적 연구 (Molecular Dynamics Study on Collision Behaviors of Cluster of Mercury on Thin-Film of Copper)

  • 정흥철;고선미;최경민;김덕줄
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2007년도 춘계학술대회B
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    • pp.2678-2683
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    • 2007
  • The interaction between metal molecules and liquid metal molecules was modeled in the molecular scale and simulated by the molecular dynamics method in order to understand behaviors of the cluster on metallic surface in collision process. Lennard-Jones potential had been used as intermolecular potential, and only attraction 때 d repulsion had been used for the behavior of the cluster on the metal surface. As results, the behavior of the cluster was so much influenced by the cluster of liquid metal temperature and function of molecules forces, such as attraction and repulsion, in the collision progress. These results of simulation will be the foundation for the micro fabrication manufacturing by using spray application technology.

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금속/LB film/금속 구조의 절연 초박막에서의 전압 발생 (Generation of Open circuit voltage in Insulating Ultra Thin Films in Metal/LB film/Metal Structure)

  • 권영수;강도열
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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    • pp.172-174
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    • 1988
  • Studies and measurements of open circuit voltage in a metal/insulator/metal structure where metal are electrodes, when the insulator molecules have dipole moments all oriented parallel to each other have been reported here. The measured voltage has been shown to be directed related to the dipole moment of the molecules in the films. The insulator ultra thin films was deposited on them by the Langmuir-Blodgett technique to obtain the structure referred to as z type and Hetero structure of LB films.

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Metal Oxide/Metal Bi-layer for Low-Cost Source/Drain Contact of Pentacene OTFT

  • Moon, Han-Ul;Yoo, Seung-Hyup
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.571-574
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    • 2009
  • Metal oxide/metal bilayer structures are explored as contacts with a low injection barrier in organic thin-film transistors (OTFTs) in an effort to realize their true potential for low-cost electronics. OTFTs with a bilayer electrode of $WO_3$ (10nm) and Al shows a saturation mobility as large as 0.97 $cm^2$/Vsec which are comparable to those of Au-based control samples (~0.90 $cm^2$/Vsec). Scaling of contact resistance with respect to the thickness of $WO_3$ layer is also discussed.

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금속 박막위에 ALD법으로 형성된 $Al_{2}O_{3}$ 박막의 계면 특성과 MIM capacitor의 제조 (Interface properties of $Al_{2}O_{3}$ thin film using ALD method on metal film and Fabrication of MIM capacitor)

  • 남상완;고성용;정영철;이용현
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.1061-1064
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    • 2003
  • In this paper, we deposited A1$_2$O$_3$ thin film using atomic layer deposition(ALD) method on Ti and fabricated metal-insulator-metal(MIM) capacitor. In the result of this study, the typical deposition rate was about 1.12$\AA$/cycle. About 30 nm of Ti was consumed during deposition and TiO$_{x}$ was formed at the interface of A1$_2$O$_3$ and Ti. Its surface roughness was 1.54nm. The leakage current density was 1.5 nA/$\textrm{cm}^2$. The temperature coefficient of capacitance(TCC) of MIM capacitor was 41 ppm/$^{\circ}C$ at 1MHz and 100 ppm/$^{\circ}C$ at 100 kHz.z.

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A Breaching of Electromagnetic Shielding by Narrow Aperture in Metal Film

  • Park, Doo Jae;Chu, Hong;Kyoung, Jisoo;Choi, Soo Bong
    • Journal of the Optical Society of Korea
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    • 제20권5호
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    • pp.563-566
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    • 2016
  • We report a theoretical research for the condition of electromagnetic shield breaching when a narrow aperture is punctured in thin metal film. To calculate electromagnetic field transmission through a narrow slit, a Rayleigh wave expansion has been applied for free standing, thin metal film. We found that the DC electric field allows perfect transmission when the length of the slit is infinite, regardless of the other geometrical factors such as slitwidth and thickness. Slitwidth dependent transmission spectra as a function of frequency shows a cutoff frequency that decreases almost linearly to the slitwidth, giving that almost successful shielding is only possible when the slitwidth is smaller than 1 micron.

$Eu^{2+}$-doped $Ca_2Si_5N_8$ 박막의 광학특성 (Luminescence Properties of $Eu^{2+}$-doped $Ca_2Si_5N_8$ Thin Films)

  • 장보윤;박주석
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.25-27
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    • 2007
  • $Eu^{2+}$-doped $Ca_2Si_5N_8$ was grown on Si(100) substrate using metal-organic deposition (MOD) method and post-annealed at $900^{\circ}C$ in various atmosphere. Luminescence properties of these thin films were investigated with variations of $Eu^{2+}$-doped concentrations and annealing atmosphere. Thin film was formed with clean surface and uniform thickness of about 72 nm. From the measurements of luminescence properties of thin films, film must be post-annealed in nitrogen or mixture of nitrogen and hydrogen atmosphere to emit a sufficient light. For $Ca_{1.5}Eu_{0.5}Si_5N_8$ thin film annealed at $900^{\circ}C$ in nitrogen atmosphere, excitation band from 380 to 420 nm was detected with the maximum intensity at 404 nm and two broad emission bands from 530 to 630 nm were observed. These broad excitation and emission bands must be attributed to the nitrogen incorporations into the films. From the results, $Ca_{2-x}Eu_xSi_5N_8$ thin film has probability for next generation thin film lighting applications such as light emitting diode (LED) or electro-luminescence (EL).

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