• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
• /
• pp.170-170
• /
• 2003

We have implanted on sapphire substrate with various ions and investigated the properties of GaN epilayers grown on implanted sapphire substrate by metal organic chemical vapor deposition (MOCVD). Sapphire is typical substrate for GaN epilayers. However, there are many problems such as lattice mismatch and thermal coefficient difference between sapphire substrate and GaN. The ion implanted substrate's surface had decreased internal tree energies during the growth of the GaN epilayer, md the misfit strain was relieved through the formation of an AlN phase on the ions implanted sapphire(0001) substrates. [1] The crystal and optical properties of GaN epilayer grown in ions implanted sapphire(0001) substrate were improved.

• 한국전기전자재료학회논문지
• /
• 제24권1호
• /
• pp.7-11
• /
• 2011

Sapphire substrate was patterned by a selective chemical wet etching technique, and GaN/InGaN structures were grown on this substrate by MOVPE (Metal Organic Vapor Phase Epitaxy). The surface of grown GaN on patterned sapphire substrate (PSS) has good morphology and uniformity. The patterned sapphire substrate LED showed better light output than conventional LED that improvement 50%. We think these results come from enhancement of internal quantum efficiency by decrease of threading dislocation and increase of light extraction efficiency. Also these LED showed more uniform emission distribution in angle than conventional LED.

• Journal of Welding and Joining
• /
• 제20권1호
• /
• pp.91-96
• /
• 2002

Three different kinds of substrate used in this study : bare Cu, electroless Ni/Cu substrate with a Nilayer thickness of $5\mu\textrm{m}$, immersion Au/electroless Ni/Cu substrate with the Au and Ni layer of $0.15\mu\textrm{m}$ and $5\mu\textrm{m}$ thickness, respectively. The wettability and interfacial tension between various substrate and Sn-3.5Ag solder were examined as a function of soldering temperature, types of flux. The wettability of Sn-3.5Ag solder increased with soldering temperature and solid content of flux. The wettability of Sn-3.5Ag solder was affected by the substrate metal finish used, i.e., nickel, gold and copper. Intermetallic compound formation between liquid solder and substrate reduced the interfacial energy and decreased wettability.

• Journal of electromagnetic engineering and science
• /
• 제8권3호
• /
• pp.129-133
• /
• 2008

An integrated passive device(IPD) technology by semi-insulating(SI)-GaAs-based fabrication has been developed to meet the ever increasing needs of size and cost reduction in wireless applications. This technology includes reliable NiCr thin film resistor, thick plated Cu/Au metal process to reduce resistive loss, high breakdown voltage metal-insulator-metal(MIM) capacitor due to a thinner dielectric thickness, lowest parasitic effect by multi air-bridged metal layers, air-bridges for inductor underpass and capacitor pick-up, and low chip cost by only 6 process layers. This paper presents the Wilkinson power divider with excellent performance for digital cellular system(DCS). The insertion loss of this power divider is - 0.43 dB and the port isolation greater than - 22 dB over the entire band. Return loss in input and output ports are - 23.4 dB and - 25.4 dB, respectively. The Wilkinson power divider based on SI-GaAs substrates is designed within die size of $1.42\;mm^2$.

• 대한기계학회논문집B
• /
• 제35권5호
• /
• pp.533-538
• /
• 2011

대부분의 유연전기소자는 플라스틱, 옷감, 종이와 같이 고온에 민감한 물질이기 때문에 열에 민감한 기판 위에 금속을 증착하고 패터닝할 수 있는 저온 공정의 개발이 필요하다. 최근 기존의 광식각과 진공증착 방법을 이용하지 않고 액상으로 금속 나노입자의 박막을 형성하고 선택적 레이저 소결을 이용하여 플라스틱에 열적손상을 최소화하고 고해상도의 금속 패터닝을 방법이 많은 연구가 활발히 진행되고 있다. 본 논문에서는 본 연구실에서 활발히 수행중인 나노물질의 선택적 레이저소결법을 이용하여 유연 디스플레이와 유연태양전지와 같은 유연전기소자의 개발 동향에 대해 알아보고 앞으로의 발전방향에 대해 논의한다.

• 한국전기전자재료학회논문지
• /
• 제18권4호
• /
• pp.350-356
• /
• 2005

We report the space charge and the surface potential of the interface between metal and copper(Ⅱ)-phthalocyanine(CuPc) thin films by measuring the microwave reflection coefficients S/sub 11/ of thin films using a near-field scanning microwave microscope(NSMM). CuPc thin films were prepared on Au and Al thin films using a thermal evaporation method. Two kinds of CuPc thin films were prepared by different substrate heating conditions; one was deposited on preheated substrate at 150。C and the other was annealed after deposition. The microwave reflection coefficients S/sub 11/ of CuPc thin films were changed by the dependence on grain alignment due to heat treatment conditions and depended on thickness of CuPc thin films. Electrical conductivity of interface between metal and organic CuPc was changed by the space charge of the interface. By comparing reflection coefficient S/sub 11/ we observed the electrical conductivity changes of CuPc thin films by the changes of surface potential and space charge at the interface.

• Nuclear Engineering and Technology
• /
• 제41권8호
• /
• pp.1101-1108
• /
• 2009

The ocean contains around eighty elements of the periodic table and uranium is also one among them, with a uniform concentration of 3.3 ppb and a relative abundance factor of 23. With a large coastline, India has a large stake in exploiting the 4 billion tonnes of uranium locked in seawater. The development of radiation grafting techniques, which are useful in incorporating the required functional groups, has led to more efficient adsorbent preparations in various geometrical configurations. Separation based on a polymeric adsorbent is becoming an increasingly popular technique for the extraction of trace heavy metals from seawater. Radiation grafting has provided definite advantages over chemical grafting. Studies related to thermally bonded non woven porous polypropylene fiber sheet substrate characterization and parameters to incorporate specific groups such as acrylonitrile (AN) into polymer back bones have been investigated. The grafted polyacrylonitrile chains were chemically modified to convert acrylonitrile group into an amidoxime group, a chelating group responsible for heavy metal uptake from seawater/brine. The present work has been undertaken to concentrate heavy metal ions from lean solutions from constant potential sources only. A scheme was designed and developed for investigation of the recovery of heavy metal ions such as uranium and vanadium from seawater.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.166.2-166.2
• /
• 2014

In this work, we demonstrated a facile and effective method for deposition of metal tetraphenylporphyrin (MTPP) thin film by a combined a thermal evaporation (TE) and atomic layer deposition (ALD). For the deposition of Zn-TPP thin film, Tetraphenylporphyrin (TPP) and diethyl zinc (DEZ) were used as organic and inorganic materials, respectively. Optimum conditions for the deposition of Zn-TPP thin film were established systematically: (1) the exposure time of DEZ as inorganic precursor and (2) the substrate temperature were adjusted, respectively. As a result, we verified that the surface reaction between organic semiconductor (TPP) and metal atom (Zn) was ALD process. In addition, we calculated activation energy by using Arrhenius equation for the substrate temperature versus area change rate of pyrrolic nitrogen. The surface and interface reactions between TPP with Zn were investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, UV-vis spectroscopy, and scanning electron microscopy. These results show a facile and well-controllable fabrication technique for the metal-organic thin film for future electronic applications.

• Journal of Magnetics
• /
• 제3권1호
• /
• pp.31-35
• /
• 1998

Metal/cobalt ferrite composite thin films with the saturation magnetization (M_s$)of~580 emu/cm3 and the coercivity(Hc) of 1700 Oe were prepared by the reactive sputtering. With increasing substrate temperature, Ms of the thin films increased, while Hc of the thin films decrease. This sttributed to the precipitation of $Co_xFe_{1-x}(x {\appro}x0.62)$ metal phase in the thin films. The metal phase showed the BCC structure ($a_0$=2.89 $\AA$) and Im3m space group. Also, the cobalt ferrite phase was identified as$ CoFe_2O_4$ with a cubic structure ($a_0=8.39 $\AA$$) and a space group of Fd3m. For the higher cobalt content than the stoichiometric composition,$ Co_{37.8}Fe_{62.2}$, the thin films with high Ms and Hc could be obtained in the wide substrate temperature range (200-40$0^{\circ}C$).

• Corrosion Science and Technology
• /
• 제20권6호
• /
• pp.361-366
• /
• 2021

Localized corrosion behavior of Ni-based Inconel 718 alloy was investigated by electrochemical anodic polarization techniques in NACE TM 0177 A solution of 5 wt% NaCl + 0.5 wt% acetic acid at room temperature. After the solution heat treated at 1080 ℃ for 2.5 h, Inconel 718 was age-hardened at 780 ℃ for 8 h. The microstructure of the alloy surface was investigated by optical microscopic or scanning electron microscopic technique. The austenitic phase with the presence of metal carbides was observed on the surface of Inconel 718. Metal-carbides such as Nb-Mo and Ti-carbide with diameters of approximately 10 and 3 ㎛, respectively, were formed in Inconel 718. Anodic polarization results revealed that localized corrosion was observed at the interface between austenitic phase of a substrate and metal carbides. Difference in electrochemical property between a metal carbide and an austenitic substrate could provide an initiation site for localized corrosion of Inconel 718 surface.