• 제목/요약/키워드: Metal doping.

검색결과 315건 처리시간 0.024초

Dependence of Light-Emitting Characteristics of Blue Phosphorescent Organic Light-Emitting Diodes on Electron Injection and Transport Materials

  • Lee, Jeong-Ik;Lee, Jonghee;Lee, Joo-Won;Cho, Doo-Hee;Shin, Jin-Wook;Han, Jun-Han;Chu, Hye Yong
    • ETRI Journal
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    • 제34권5호
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    • pp.690-695
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    • 2012
  • We investigate the light-emitting performances of blue phosphorescent organic light-emitting diodes (PHOLEDs) with three different electron injection and transport materials, that is, bathocuproine(2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) (Bphen), 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene (Tm3PyPB), and 2,6-bis(3-(carbazol-9-yl)phenyl)pyridine (26DCzPPy), which are partially doped with cesium metal. We find that the device characteristics are very dependent on the nature of the introduced electron injection layer (EIL) and electron transporting layer (ETL). When the appropriate EIL and ETL are combined, the peak external quantum efficiency and peak power efficiency improve up to 20.7% and 45.6 lm/W, respectively. Moreover, this blue PHOLED even maintains high external quantum efficiency of 19.6% and 16.9% at a luminance of $1,000cd/m^2$ and $10,000cd/m^2$, respectively.

Ultraviolet Photoelectron spectroscopy Study of Colossal Magnetoresistive $La_{0.7-x}P_rxCa_{0.3}MnO_3$

  • Lee, Chang-Won;Hoon Koh;Noh, Han-Jin;Park, Jong-Hyurk;Kim, Hyung-Do;Moonsup Han;Oh, Se-Jung;Eom, dai-Jin;Noh, Tae-Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.172-172
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    • 1999
  • Perovskite Manganese Oxide has been intensively investigated since the discovery of the colossal magnetoresistive(CMR) effect. In this paper, we studied the effect of temperature dependence and various doping dependence of rare earth site ions of La0.7-xPrxCa0.3MnO3 series using Ultraviolet Photoelectron spectroscopy(UPS). They show unusual temperature dependent features and the doped rare earth ions seem to affect the electron-phonon coupling strongly. We found clear evidence of metal-insulator transition from the spectral density at the Fermi level. but the transition temperature is lower than that deduced from transport measurements. Also we found that the spectral features change as time goes on implying that the surface of these materials is somewhat unstable in the vacuum. We can conclude from these results that the surface oxygen atoms correlated to the hopping electrons can escape from the material into the vacuum and that the surface state of these material is different from the bulk state.

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Investigation of Oxygen Incorporation in AlGaN/GaN Heterostructures

  • Jang, Ho-Won;Baik, Jeong-Min;Lee, Jong-Lam;Shin, Hyun-Joon;Lee, Jung-Hee
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제3권2호
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    • pp.96-101
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    • 2003
  • Direct evidence on the incorporation of high concentration of oxygen into undoped AlGaN layers for the AlGaN/GaN heterostuctures is provided by scanning photoemission microscopy using synchrotron radiation. In-situ annealing at $1000^{\circ}C$ resulted in a significant increase in the oxygen concentration at the AlGaN surface due to the predominant formation of Al-O bonds. The oxygen incorporation into the AlGaN layers resulting from the high reactivity of Al to oxygen can enhance the tunneling-assisted transport of electrons at the metal/AlGaN interface, leading to the reduction of the Schottky barrier height and the increase of the sheet carrier concentration near the AlGaN/GaN interface.

DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with $Si_{0.88}Ge_{0.12}(C)$ Heterostructure Channel

  • Choi, Sang-Sik;Yang, Hyun-Duk;Han, Tae-Hyun;Cho, Deok-Ho;Kim, Jea-Yeon;Shim, Kyu-Hwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권2호
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    • pp.106-113
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    • 2006
  • Electrical properties of $Si_{0.88}Ge_{0.12}(C)$ p-MOSFETs have been exploited in an effort to investigate $Si_{0.88}Ge_{0.12}(C)$ channel structures designed especially to suppress diffusion of dopants during epitaxial growth and subsequent fabrication processes. The incorporation of 0.1 percent of carbon in $Si_{0.88}Ge_{0.12}$ channel layer could accomodate stress due to lattice mismatch and adjust bandgap energy slightly, but resulted in deteriorated current-voltage properties in a broad range of operation conditions with depressed gain, high subthreshold current level and many weak breakdown electric field in gateoxide. $Si_{0.88}Ge_{0.12}(C)$ channel structures with boron delta-doping represented increased conductance and feasible use of modulation doped device of $Si_{0.88}Ge_{0.12}(C)$ heterostructures.

스핀 코팅 가능한 폴리머의 후열처리를 통한 그래핀의 합성과 특성

  • 이임복;남정태;박상준;배동재;김근수
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.384.1-384.1
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    • 2014
  • 대면적 그래핀을 합성하는 방법으로 주로 화학기상증작법, SiC 기판을 고온 열처리하는 방법 그리고 최근에는 고체소스를 활용하여 그래핀을 합성하는 방법 등이 보고되고 있다. 이에, 본 연구에서는 폴리머 용액들을 원하는 기판에 스핀코팅하여 건조시킨 후, 후 열처리 공정을 통해 그래핀을 합성하고 물성을 평가해보았다. 그래핀 합성을 위해서 사용된 폴리머 탄소원은 Vinyl계 폴리머 용액으로, polystyrene (PS), polyacrylonitrile (PAN), 그리고 polymethylmetacrylate (PMMA) 등으로 2wt%의 폴리머 용액을 $SiO_2$기판에 스핀 코팅을 하고, 그 위에 Nickel이나 Copper와 같은 catalytic metal을 capping layer로 증착하고, 고진공에서 후열처리 공정에 의해 그래핀을 성장하였다. 이때, 탄소원으로 쓰인 PS, PMMA 폴리머는 pristine graphene 합성을 위해, PAN 폴리머는 질소가 도핑된(n-type) 그래핀 합성을 위해 사용되었다. 그래핀의 물성은 폴리머 종류, 코팅된 두께, 촉매 금속층 종류와 두께, 그리고 후열처리 공정 온도와 시간에 따라서 조절이 가능하였다. 우리는 Raman spectroscopy, AFM, SEM 등을 활용하여 그래핀의 층수, 결함, 표면양상 등을 평가하였고, 또한 전사된 그래핀을 기반으로 제작된 FET의 게이트 전압에 따른 I-V 곡선을 측정하여 캐리어 종류 및 전하 이동도 등을 평가하였다. 더욱 상세한 내용은 프레젠테이션에서 논하겠다.

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Ln0.7Ca0.3MnO3 (Ln=Nd, Sm, La)의 소결 거동 및 특성 (Sintering behavior and characterization of Ln0.7Ca0.3MnO3 (Ln=Nd, Sm, La))

  • 전검배;구본흔;이찬규
    • 한국재료학회지
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    • 제16권1호
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    • pp.44-49
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    • 2006
  • Effects of doping rare earth element on Ln site of $Ln_{0.7}Ca_{0.3}MnO_3$ (Ln=Nd, Sm and La) were examined from sintering behavior, structure and magnetic properties. Sintering reactions proceeded rapidly in order of $La_{0.7}Ca_{0.3}MnO_3>Nd_{0.7}Ca_{0.3}MnO_3>Sm_{0.7}Ca_{0.3}MnO_3$. This result can be explained by diffusivity of metal cation. Size of a-axis increased as following order of La$Nd_{0.7}Ca_{0.3}MnO_3$, 93K for $Sm_{0.7}Ca_{0.3}MnO_3$ and 225K for $La_{0.7}Ca_{0.3}MnO_3$ were obtained. This result coincides with change of Mn-O bond length causing by a-axis lattice constant.

고효율 페로브스카이트 태양전지용 무기 금속 산화물 기반 정공수송층의 개발 (Development of Inorganic Metal Oxide based Hole-Transporting Layer for High Efficiency Perovskite Solar Cell)

  • 이하람;킴 마이;장윤희;이도권
    • Current Photovoltaic Research
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    • 제8권2호
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    • pp.60-65
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    • 2020
  • In perovskite solar cells with planar heterojunction configuration, selection of proper charge-transporting layers is very important to achieve stable and efficient device. Here, we developed solution processible Cu doped NiOx (Cu:NiOx) thin film as a hole-transporting layer (HTL) in p-i-n structured methylammonium lead trihalide (MAPbI3) perovskite solar cell. The transmittance and thickness of NiOx HTL is optimized by control the spin-coating rate and Cu is additionally doped to improve the surface morphology of undoped NiOx thin film and hole-extraction properties. Consequently, a perovskite solar cell containing Cu:NiOx HTL with optimal doping ratio of Cu exhibits a power conversion efficiency of 14.6%.

RF magnetron sputtering법으로 제조한 $MoO_3$ 박막의 가스 감지 특성 및 첨가물의 영향 (Gas Sensing Characteristics and Doping Effect of $MoO_3$ Thin Films prepared by RF magnetron sputtering)

  • 황종택;장건익
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.460-463
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    • 2002
  • $MoO_3$ thin films were deposited on electrode and heater screen-printed alumina substrates in $O_2$ atmosphere by RF reactive sputtering using Molybdenum metal target. The deposition was performed at $300^{\circ}C$ with 350W of a forward power in an $Ar-O_2$ atmosphere. The working pressure was maintained at $3{\times}10^{-2}mtorr$ and all deposited films were annealed at $500^{\circ}C$ for 5hours. To investigate gas sensing characteristics of the addition doped $MoO_3$ thin film, Co, Ni and Pt were used as adding dopants. The sensing properties were investigated in tenn of gas concentration under exposure of reducing gases such as $H_2$, $NH_3$ and CO at optimum working temperature. Co-doped $MoO_3$ thin film shows the maximum 46.8% of sensitivity in $NH_3$ and Ni-doped $MoO_3$ thin film exhibits 49.7% of sensitivity in $H_2$.

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Incorporation of Manganese Oxide Nanoparticles Into Polyaniline Hollow Nanospheres and Its Application to Supercapacitors

  • Kwon, Hyemin;Ryu, Ilhwan;Han, Jiyoung;Yim, Sanggyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.295-295
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    • 2013
  • Supercapacitors with higher energy and power density are attracting growing attention for their wide range of potential applications such as portable electronic equipments, hybrid vehicle and cellular devices. In various classes of materials for supercapacitors, the redox pseudocapacitive materials such as conducting polymers and metal oxides have been most widely studied recently. The nanostructuring of the electrode surface has also been focused on since it can provide large surface area and consequently easy diffusion of ions in the capacitors. Among the active materials, in this work, we have used polyaniline (PANi) and manganese oxide ($MnO_2$). PANi is one of the promising electrode and active materials due to its desirable properties such as high electrochemical activity, high doping level and stability. $MnO_2$ is also widely studied material for supercapacitors since it is relatively cheap and environmentally friendly. In this work, we fabricated PANi hollow nanospheres by polymerizing aniline monomers on the polystyrene (PS) nanospheres and then dissolving the inner PS spheres. This nanostructuring of the PANi surface can provide large surface area and hence easy diffusion of electrolyte ions. We also incorporated $MnO_2$ nanoparticles into the PANi hollow nanospheres and investigated its electrochemical properties. It is expected that the combination of these two active materials with slightly different working potential windows show synergetic effects such as broader working potential range and enhanced specific capacitance.

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몰리브덴 산화물이 도핑된 티타늄 나노튜브전극의 수소 발생 반응 연구 (Study of Hydrogen Evolution Reaction by Molybdenum Oxide Doped TiO2 Nanotubes)

  • 오기석;유현석;이기백;최진섭
    • 한국표면공학회지
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    • 제49권6호
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    • pp.521-529
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    • 2016
  • In this study, titanium nanotubes, prepared by anodization method, showing high surface and strong chemical stability in acidic and basic media, have been employed for the application to the electrodes for water splitting in KOH solution. Due to its high polarization resistance of $TiO_2$ itself, proper catalysts are essentially required to reduce overpotentials for water oxidation and reduction. Most of academic literature showed noble metal catalysts for foreign dopants in $TiO_2$ electrodes. From commercialization point of view, screening of low-cost catalyst is important. Herein, we propose molybdenum oxide as low-cost catalysts among various catalysts tested in the experiments, which exhibits the highest performance for hydrogen evolution reaction in highly alkaline solution. We showed that molybdenum oxide doped electrode can be operated in extreme acidic and basic conditions as well.