• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2005년도 춘계 학술대회
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• pp.173-179
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• 2005

본 연구에서는 Nickel-Metal Induced Lateral crystallization(Ni-MILC)에 depart에 따른 영향을 관찰함에 있어 Nickel에 Palladium Metal을 인접시켜(Pd assisted Ni-MILC) 그 결정화 속도를 향상시키는 방법을 제안하였다. a-Si에 Phosphorous가 doping 되어 있는 경우 Ni-MILC의 성장은 intrinsic에 비해 2.5배 감소되는 반면, Boron을 doping한 경우 Ni-MILC의 성장은 intrinsic의 경우보다 5배 이상의 성장을 보이게 되는데, well type의 Pd을 인접시킨 경우 Pd에 의해 유도된 tensile stress가 각 doping에 따른 성장 속도를 더욱 증대시키는 것을 확인할 수 있었으며, 이와 같은 현상을 MILC mechanism으로 설명하였다. 이는 Ni-MILC를 이용하여 다결정 실리콘 TFT 제작 시 결정화 속도로 인하여 문제가 되었던 N-type에서의 적용이 가능함과 동시에 contact MILC 등의 방법에도 이용가능성을 의미한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.424.1-424.1
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• 2014

Vanadium dioxide (VO2) is a strongly correlated oxide exhibiting a first-order metal-insulator transition (MIT) that is accompanied by a structural phase transition from a low temperature monoclinic phase to a high-temperature rutile phase. VO2 has attracted significant attention because of a variety of possible applications based on its ultrafast MIT. Interestingly, the transition nature of VO2 is significantly affected by stress due to doping and/or interaction with a substrate and/or surface tension as well as defects. Accordingly, there have been considerable efforts to understand the influences of such factors on the phase transition and the fundamental mechanisms behind the MIT behavior. Here, we present the influences of oxygen deficiency, hydrogen doping, and substrate-induced stress on MIT phenomena in single-crystalline VO2 nanobeams. Specifically, the work function and the electrical resistance of the VO2 nanobeams change with the compositional variation due to the oxygen-deficiency-related defects. In addition, the VO2 nanobeams during exposure to hydrogen gas exhibit the reduction of transition temperature and the complex phase inhomogenieties arising from both substrate-induced stress and the formation of the hydrogen doping-induced metallic rutile phase.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권2호
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• pp.120-131
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• 2007

A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.

• 한국입자에어로졸학회지
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• 제6권1호
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• pp.29-35
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• 2010

Transition metals such as V, Fe, and Ni were used to synthesize doped zinc oxide nanoparticles from mixed liquid precursors by using the flame spray pyrolysis (FSP). The effects of dopants on the powder properties such as morphology, specific surface area, crystal structure, and light adsorption were analyzed by TEM, BET, XRD, and UV-Vis diffuse reflection spectrum (DRS), respectively. The results showed that hexagonal wurtzite structured ZnO:M (M = V, Fe, Ni) nanoparticles were successfully synthesized by the FSP. The transition metal-doping resulted in the decrease in its particle size and crystallite size. The UV-vis absorption spectra of ZnO:M nanoparticles were also red-shifted. ZnO:V showed the highest MB degradation of 99.4% under the UV irradiation after 3 hrs.

• Transactions on Electrical and Electronic Materials
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• 제11권1호
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• pp.15-19
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• 2010

In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a $0.35\;{\mu}m$ standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and $1.5\;{\mu}m$. The drain current ($I_{ON}$), transconductance ($g_m$), substrate current ($i_{SUB}$), drain to source leakage current ($i_{OFF}$), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved $I_{ON}$ and $g_m$ characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and $I_{OFF}$ characteristics.

• 전자공학회논문지D
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• 제34D권5호
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• pp.45-51
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• 1997

Low temperature activation of dopants which were doped using ion mass doping system in amorphous silicon(a-Si) thin films was investigated. With a 20.angs.-thick Ni film on top of the a-Si thin film, the activation temperature of dopants lowered to 500.deg. C. When the doping was performaed after the deposition of Ni thin film on the a-Si thin films (post-doping), the activation time was shorter than that of dopants mass, the activation time of the dopants doped by pre-doping method increased. It turned NiSi2 formation, while the decrease of activation time was mainly due to the enhancement of the NiSi2 formation by mixing of Ni and a-Si at the interface of Ni and a -Si thin during the ion doping process.

• 조명전기설비학회논문지
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• 제27권6호
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• pp.95-99
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• 2013

Furnace is currently the most important doping process using POCl3 in solar cell. However furnace need an expensive equipment cost and it has to purge a poisonous gas. Moreover, furnace typically difficult appling for selective emitters. In this study, we developed a new atmospheric pressure plasma source, in this procedure, we research the atmospheric pressure plasma doping that dopant is phosphoric acid($H_3PO_4$). Metal tube injected Ar gas was inputted 5 kV of a low frequency(scores of kHz) induced inverter, so plasma discharged at metal tube. We used the P type silicon wafer of solar cell. We regulated phosphoric acid($H_3PO_4$) concentration on 10% and plasma treatment time is 90 s, 150 s, we experiment that plasma current is 70 mA. We check the doping depth that 287 nm at 90 s and 621 nm at 150 s. We analysis and measurement the doping profile by using SIMS(Secondary Ion Mass Spectroscopy). We calculate and grasp the sheet resistance using conventional sheet resistance formula, so there are 240 Ohm/sq at 90 s and 212 Ohm/sq at 150 s. We analysis oxygen and nitrogen profile of concentration compared with furnace to check the doped defect of atmosphere.

• 대한전기학회논문지
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• 제36권7호
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• pp.462-469
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• 1987

A metal gate MOSFET with source/drain regions self-aligned to gate region is proposed. The proposed MOS transistor is fabricated by utilizing the higher oxidation rate of source/drain regions with high doping concentration when compared with channel region with moderate doping. The thick oxide on the source/drain regions reduces the gate and drain(source) overlap capacitance down to that of a self-aligned polysilicon gate device while allowing the use of a metal gate with much lower resistivity than the more commonly used polycrystalline silicon. A ring oscillator composed of 15 inverter stages has been computer simulated using SPICE. The results of the simulation show good agreement with experimental measurement confirming the fast switching speed of propesed MOSFET.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.187-187
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• 2012

Solution-processed metal-alloy oxides such as indium zinc oxide (IZO), indium gallium zinc oxide (IGZO) has been extensively researched due to their high electron mobility, environmental stability, optical transparency, and solution-processibility. In spite of their excellent material properties, however, there remains a challenging problem for utilizing IZO or IGZO in electronic devices: the supply shortage of indium (In). The cost of indium is high, what is more, indium is becoming more expensive and scarce and thus strategically important. Therefore, developing an alternative route to improve carrier mobility of solution-processable ZnO is critical and essential. Here, we introduce a simple route to achieve high-performance and low-temperature solution-processed ZnO thin film transistors (TFTs) by employing alkali-metal doping such as Li, Na, K or Rb. Li-doped ZnO TFTs exhibited excellent device performance with a field-effect mobility of $7.3cm^2{\cdot}V-1{\cdot}s-1$ and an on/off current ratio of more than 107. Also, in case of higher drain voltage operation (VD=60V), the field effect mobility increased up to $11.45cm^2{\cdot}V-1{\cdot}s-1$. These all alkali metal doped ZnO TFTs were fabricated at maximum process temperature as low as $300^{\circ}C$. Moreover, low-voltage operating ZnO TFTs was fabricated with the ion gel gate dielectrics. The ultra high capacitance of the ion gel gate dielectrics allowed high on-current operation at low voltage. These devices also showed excellent operational stability.

• 대한화학회지
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• 제63권2호
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• pp.94-101
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• 2019

Nb, Mo-doped and Nb/Mo-codoped $VO_2(M)$ nanocrystallites with various doping levels were synthesized for the first time by a hydrothermal and post thermal transformation method. The reversible phase transition characteristics of those doped $VO_2(M)$ was comparatively investigated. Nb-doping of $VO_2(M)$ by this method resulted in a very efficient lowering of the transition temperature ($T_c$) with a rate of $-16.7^{\circ}C/at.%$ that is comparable to W-doping, while Mo-doping did not give a serious reduction of $T_c$ with only a rate of $-5.1^{\circ}C/at.%$. Nb/Mo-codoping gave a similar result to Nb-doping without a noticeable difference. The thin films of Nb-doped and Nb/Mo-codoped $VO_2(M)$ with a thickness of ca. 120 nm were prepared by a wet-coating of the nanoparticle-dispersed solutions. Those films showed a good thermochromic modulation of near infrared radiation with 30-35% for Nb-doped $VO_2(M)$ and 37-40% for Nb/Mo-codoped ones. Nb/Mo-codoped $VO_2(M)$ film showed slightly enhanced thermochromic performance compared with Nb-doped $VO_2(M)$ film.