• Title/Summary/Keyword: Metal Sensor

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Effects of Metal-Organic Framework Membrane on Hydrogen Selectivity

  • Suh, Jun Min;Cho, Sung Hwan;Jang, Ho Won
    • Journal of Sensor Science and Technology
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    • v.29 no.6
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    • pp.374-381
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    • 2020
  • Hydrogen gas has attracted considerable attention as a promising candidate for future energy resources because of its eco-friendly characteristics; however, its highly combustible characteristics should be thoroughly examined to preclude potential disasters. In this regard, a highly sensitive method for the selective detection of H2 is extremely important. To achieve excellent H2 selectivity, the utilization of a metal-organic framework (MOF) membrane can physically screen interfering gas molecules by restricting the size of kinetic diameters that can penetrate its nanopores. This paper summarizes the various endeavors of researchers to utilize the MOF molecular sieving layer for the development of highly selective H2 sensors. Further, the review affords useful insights into the development of highly reliable H2 sensors.

Metal-Semiconductor-Metal Photodetector Fabricated on Thin Polysilicon Film (다결정 실리콘 박막으로 구성된 Metal-Semiconductor-Metal 광검출기의 제조)

  • Lee, Jae-Sung;Choi, Kyeong-Keun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.5
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    • pp.276-283
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    • 2017
  • A polysilicon-based metal-semiconductor-metal (MSM) photodetector was fabricated by means of our new methods. Its photoresponse characteristics were analyzed to see if it could be applied to a sensor system. The processes on which this study focused were an alloy-annealing process to form metal-polysilicon contacts, a post-annealing process for better light absorption of as-deposited polysilicon, and a passivation process for lowering defect density in polysilicon. When the alloy annealing was achieved at about $400^{\circ}C$, metal-polysilicon Schottky contacts sustained a stable potential barrier, decreasing the dark current. For better surface morphology of polysilicon, rapid thermal annealing (RTA) or furnace annealing at around $900^{\circ}C$ was suitable as a post-annealing process, because it supplied polysilicon layers with a smoother surface and a proper grain size for photon absorption. For the passivation of defects in polysilicon, hydrogen-ion implantation was chosen, because it is easy to implant hydrogen into the polysilicon. MSM photodetectors based on the suggested processes showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and are therefore applicable to sensor systems.

A Low-Power Portable ECG Touch Sensor with Two Dry Metal Contact Electrodes

  • Yan, Long;Yoo, Hoi-Jun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.4
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    • pp.300-308
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    • 2010
  • This paper describes the development of a low-power electrocardiogram (ECG) touch sensor intended for the use with two dry metal electrodes. An equivalent ECG extraction circuit model encountered in a ground-free two-electrode configuration is investigated for an optimal sensor read-out circuit design criteria. From the equivalent circuit model, (1) maximum sensor resolution is derived based on the electrode's background thermal noise, which originates from high electrode-skin contact impedance, together with the input referred noise of instrumentation amplifier (IA), (2) 60 Hz electrostatic coupling from mains and motion artifact are also considered to determine minimum requirement of common mode rejection ratio (CMRR) and input impedance of IA. A dedicated ECG read-out front end incorporating chopping scheme is introduced to provide an input referred circuit noise of 1.3 ${\mu}V_{rms}$ over 0.5 Hz ~ 200 Hz, CMRR of IA > 100 dB, sensor resolution of 7 bits, and dissipating only 36 ${\mu}W$. Together with 8 bits synchronous successive approximation register (SAR) ADC, the sensor IC chip is implemented in 0.18 ${\mu}m$ CMOS technology and integrated on a 5 cm $\times$ 8 cm PCB with two copper patterned electrodes. With the help of proposed touch sensor, ECG signal containing QRS complex and P, T waves are successfully extracted by simply touching the electrodes with two thumbs.

Development of High Sensitive Integrated Dual Sensor to Detect Harmful Exhaust Gas and Odor for the Automotive (악취분별능력을 가진 자동차용 고기능 듀얼타입 집적형 유해가스 유입차단센서 개발)

  • Chung, Wan-Young;Shim, Chang-Hyun
    • Journal of Institute of Control, Robotics and Systems
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    • v.13 no.7
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    • pp.616-623
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    • 2007
  • A dual micro gas sensor array was fabricated using nano sized $SnO_2$ thin films which had good sensitivities to CO and combustible gases, or $H_2S$ gas for air quality sensors in automobile. The already existed air quality sensor detects oxidizing gases and reducing gases, the air quality sensor(AQS), located near the fresh air inlet detected the harmful gases, the fresh air inlet door/ventilation flap was closed to reduce the amount of pollution entering the vehicle cabin through HVAC(heating, ventilating, and air conditioning) system. In this study, to make $SnO_2$ thin film AQS sensor, thin tin metal layer between 1000 and $2000{\AA}$ thick was oxidized between 600 and $800^{\circ}C$ by thermal oxidation. The gas sensing layers such as $SnO_2$, $SnO_2$(pt) and $SnO_2$(+CuO) were patterned by metal shadow mask for simple fabrication process on the silicon substrate. The micro gas sensors with $SnO_2$(+Pt) and $SnO_2$(CuO) showed good selectivity to CO gas among reducing gases and good sensitivity to $H_2S$ that is main component of bad odor, separately.

A Study on Pattern Analysis of Odorous Substances with a Single Gas Sensor

  • Kim, Han-Soo;Choi, Il-Hwan;Kim, Sun-Tae
    • Journal of Sensor Science and Technology
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    • v.25 no.6
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    • pp.423-430
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    • 2016
  • This study used a single metal oxide semiconductor (MOS) sensor to classify the major odorous gases hydrogen sulfide ($H_2S$), ammonia ($NH_3$) and toluene ($C_6H_5CH_3$). In order to classify these odorous substances, the voltage on the MOS sensor heater was gradually reduced in 0.5 V steps 5.0 V to examine the changes to the response by the cooling effect on the sensor as the voltage decreased. The hydrogen sulfide gas showed the highest sensitivity compared to odorless air under approximately 2.5 V and the ammonia and toluene gases showed the highest sensitivity under approximately 5.0 V. In other words, the hydrogen sulfide gas reacted better in the low temperature range of the MOS sensor, and the ammonia and toluene gases reacted better in the high-temperature range. In order to analyze the response characteristics of the MOS sensor by temperature in a pattern, a two-dimensional (2D) x-y pattern analysis was introduced to clearly classify the hydrogen sulfide, ammonia, and toluene gases. The hydrogen sulfide gas was identified by a straight line with a slope of 1.73, whereas the ammonia gas had a slope of 0.05 and the toluene gas had a slope of 0.52. Therefore, the 2D x-y pattern analysis is suggested as a new way to classify these odorous substances.

Hydrogen Gas Sensor Performance of a p-CuO/n-ZnO Thin-film Heterojunction (p-CuO/n-ZnO 이종접합 박막 구조의 수소 가스 특성 평가)

  • Yang, Yijun;Maeng, Bohee;Jung, Dong Geon;Lee, Junyeop;Kim, Yeongsam;An, Hee Kyung;Jung, Daewoong
    • Journal of Sensor Science and Technology
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    • v.31 no.5
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    • pp.337-342
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    • 2022
  • Hydrogen (H2) gas is widely preferred for use as a renewable energy source owing to its characteristics such as environmental friendliness and a high energy density. However, H2 can easily reverse or explode due to minor external factors. Therefore, H2 gas monitoring is crucial, especially when the H2 concentration is close to the lower explosive limit. In this study, metal oxide materials and their p-n heterojunctions were synthesized by a hydrothermal-assisted dip-coating method. The synthesized thin films were used as sensing materials for H2 gas. When the H2 concentration was varied, all metal oxide materials exhibited different gas sensitivities. The performance of the metal oxide gas sensor was analyzed to identify parameters that could improve the performance, such as the choice of the metal oxide material, effect of the p-n heterojunctions, and operating temperature conditions of the gas sensor. The experimental results demonstrated that a CuO/ZnO gas sensor with a p-n heterojunction exhibited a high sensitivity and fast response time (134.9% and 8 s, respectively) to 5% H2 gas at an operating temperature of 300℃.

Luminescence Intensity Change Using N-Carbamoylglycine, N-Salicylideneaniline and Metal ions (N-Carbamoylglycine 및 N-Salicylideneaniline과 Metal ions들에 의한 발광 세기의 변화)

  • Kim, Ji Ung;Kim, Yeong Hae
    • Journal of the Korean Chemical Society
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    • v.46 no.6
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    • pp.502-508
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    • 2002
  • We have used PET chemosensors in the determination of N-carbamoylglycine. When N-carbam-oylglycine reacts with complex already made by the fluorophore and metal ion, the luminescence intensity can be changed and this phenomenon can be utilized in quantification. We used three metal ions, $Zn^{2+}$, $Ni^{2+}$, $Cu^{2+}$ and in order to investigate selectivity an acetic acid was used. $Ni^{2+}$ ion showed change in the eT mechanism by the anions. $Cu^{2+}$ ion showed the ability to distinguish N-carbamoylglycine from an acetic acid and it is noteworthy that $Zn^{2+}$ ion can change luminescence sensitively according to concentration.

A study on the UHF PD measuring technique for GIS with a metal flange around insulating spacer (스페이서에 Metal flange가 있는 GIS에서의 UHF PD 측정 기술 연구)

  • Kang, W.J.;Lee, C.J.;Kang, Y.S.;Park, J.B.;Lee, H.C.;Park, J.W.
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1638-1640
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    • 2003
  • In the recent years, UHF PD measuring technique for detecting partial discharges was proved the effective method for Gas Insulated Switchgear (GIS). However, in case of GIS with a metal flange around insulating spacer, UHF PD measurement using typical external UHF PD sensor is difficult. In this paper, a novel hole-type UHF PD sensor based on Archimedean spiral antenna theory has been proposed and realized. All spacers with metal flange have small hole in order to inject epoxy. Using the novel hole-type UHF PD sensor, it makes detection possible to PD signal that are emitted through the epoxy injection hole. Additionally, the measuring characteristic of UHF PD signals from several artificial defects in GIS and the novel ${\Phi}$-f-q pattern analysis technology are discussed.

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MISFET type H2 sensor using pd-black catalytic metal gate for high performance (Pd-black 촉매금속 이용한 고성능 MISFET 형 수소센서)

  • Kang, Ki-Ho;Cho, Yong-Soo;Han, Sang-Do;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.15 no.2
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    • pp.90-96
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    • 2006
  • We have fabricated the Pd-blck/NiCr gate MISFET-type $H_2$ sensor to detect the hydrogen in atmosphere. A differential pair-type structure was used to minimize the intrinsic voltage drift of the MISFET. The Pd-black film was deposited in the argon environment by thermal evaporation. In order to eliminate the blister formation in the surface of the hydrogen sensing gate metal, Pd-black/NiCr double metal layer was deposited on the gate insulator. The scanning electron microscopy and the auger electron spectroscopy was used to analyze their surface morphology and basic structure. The Pd-black/NiCr gate MISFET has been shown high sensitivity and stability more than Pd-planar/NiCr gate MISFET.

Metal-Insulator Transition of Vanadium Dioxide Based Sensors (바나듐 산화물의 금속-절연체 전이현상 기반 센서 연구)

  • Baik, Jeong Min
    • Journal of Sensor Science and Technology
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    • v.23 no.5
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    • pp.314-319
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    • 2014
  • Here, we review the various methods for the preparation of vanadium dioxide ($VO_2$) films and nanowires, and their potential applications to the sensors such as gas sensor, strain sensor, and temperature sensor. $VO_2$ is an interesting material on account of its easily accessible and sharp Mott metal-insulator transition (MIT) at ${\sim}68^{\circ}C$ in the bulk. The MIT is also triggered by the electric field, stress, magnetic field etc. This paper involves exceptionally sensitive hydrogen sensors based on the catalytic process between hydrogen molecules and Pd nanoparticles on the $VO_2$ surface, and fast responsive sensors based on the self-heating effects which leads to the phase changes of the $VO_2$. These features will be seen in this paper and can enable strategies for the integration of a $VO_2$ material in advanced and complex functional units such as logic gates, memory, FETs for micro/nano-systems as well as the sensors.