• Journal of the Korean Solar Energy Society
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• v.32 no.5
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• pp.102-107
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• 2012

Halogen lamp was applied to fabricate the selective emitter crystalline silicon solar cell. In selective emitter structure, the recombination of minority carriers is reduced with heavily doped emitter under metal grid, consequently improving the conversion efficiency. Laser selective emitter process which is recently used the most generally induces the damage on the silicon surface. However the lamp has enough heat to form heavily doped emitter layer by diffusing phosphorus from PSG without surface damage. In this work, we have studied to find the design and the suitable condition for halogen lamp such as power, time, temperature and figured out the possibility to fabricate the selective emitter silicon solar cell by lamp heating. The sheet resistance with $100{\Omega}/{\Box}$ was lower to $50{\Omega}/{\Box}$ after halogen lamp treatment. Heat transfer to lightly doped emitter region was blocked by using the shadow mask.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.552-555
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• 2002

In order to achieve higher performance and low cost a-Si TFT-LCD panel, new material architecture and its process integration for a-Si TFT array manufacturing method were developed. Material combination of low resistant dry-etchable metal and new pixel electrode under currently adopted 4 mask process made it possible to get more-simplified manufacturing method and better device performance for the a-Si TFT-LCD application. Proposed 4 mask process architecture with optimized wet etchants and dry etching process was applicable to various devices such as notebook, monitor and TV.

• Korean Journal of Materials Research
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• v.20 no.10
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• pp.550-554
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• 2010

This work presents a fabrication procedure to make large-area, size-tunable, periodically different shape metal arrays using nanosphere lithography (NSL) combined with ashing and annealing. A polystyrene (PS, 580 ${\mu}m$) monolayer, which was used as a mask, was obtained with a mixed solution of PS in methanol by multi-step spin coating. The mask morphology was changed by oxygen RIE (Reactive Ion Etching) ashing and temperature processing by microwave heating. The Au or Pt deposition resulted in size tunable nano patterns with different morphologies such as hole and dots. These processes allow outstanding control of the size and morphology of the particles. Various sizes of hole patterns were obtained by reducing the size of the PS sphere through the ashing process, and by increasing the size of the PS sphere through annealing treatment, which resulted in tcontrolling the size of the metallic nanoparticles from 30 nm to 230 nm.

• Bulletin of the Korean Space Science Society
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• 2009.10a
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• pp.30.1-30.1
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• 2009

We present extra-tidal features of spatial configuration of stars around three metal-poor globular clusters (NGC 6273, NGC 6266, NGC 6681) located in the Galactic bulge. The accurate wide-field photometric data were obtained in BVI bands with the MOSAICII camera at CTIO Blanco 4m telescope. The derived color-magnitude diagrams (CMDs) covered a total $71'\times71'$ area including a cluster and its surrounding field outside of the tidal radius of the cluster. Applying the statistical technique of the CMD-mask algorithm, we minimized the field star contaminations on the obtained CMDs and chose properly the cluster's member stars. On the spatial stellar density maps around the target clusters, we found overdensity features beyond the tidal radii of the clusters. We also found that the radial density profiles of the clusters show departures from the best-fit King model for the outer region of clusters. The results add further observational evidence that the observed metal-poor bulge clusters would be originated from accreted satellite systems, indicative of the merging scenario of the formation of the Galaxy.

• Journal of Electrical Engineering and information Science
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• v.2 no.6
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• pp.212-216
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• 1997

A new metal tip fabrication process for low voltage operation is reported in this paper. The key element of the fabrication process is that isotropic silicon etching and oxidation process used in silicon tip fabrication is utilized for gate hole size reduction and gate oxide layer. A metal FEA with 625 tips was fabricated in order to demonstrate the validity of the new process and submicron gate apertures were successfully obtained from originally 1.7$\mu\textrm{m}$ diameter mask. The emission current above noise level was observed at the gate bias of 50V. The required gate voltage to obtain the anode current of 0.1${\mu}\textrm{A}$/tip was 74V and the emission current was stable above 2${\mu}\textrm{A}$/tip without any disruption. The local field conversion factor and the emitting area were calculated as 7.981${\times}$10\ulcornercm\ulcorner and 3.2${\times}$10\ulcorner$\textrm{cm}^2$/tip, respectively.

• Journal of Electrical Engineering and Technology
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• v.4 no.4
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• pp.546-551
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• 2009

In this paper, we describe a self-aligned fabrication method for a nano-patterned bottom electrode using flood exposure from the backside. Misalignments between layers could cause the final devices to fail after the fabrication of the nano-scale bottom electrodes. A self-alignment was exploited to embed the bottom electrode inside the glass substrate. Aluminum patterns act as a dry etching mask to fabricate glass trenches as well as a self-aligned photomask during the flood exposure from the backside. The patterned photoresist (PR) has a negative sidewall slope using the flood exposure. The sidewall slopes of the glass trench and the patterned PR were $54.00^{\circ}$ and $63.47^{\circ}$, respectively. The negative sidewall enables an embedment of a gold layer inside $0.7{\mu}m$ wide glass trenches. Gold residues on the trench edges were removed by the additional flood exposure with wet etching. The sidewall slopes of the patterned PR are related to the slopes of the glass trenches. Nano-scale bottom electrodes inside the glass trenches will be used in beam resonators operating at high resonant frequencies.

• Journal of Preventive Medicine and Public Health
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• v.31 no.3 s.62
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• pp.414-423
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• 1998

Metal fume fever has been known as an occupational disease is induced by intense inhalation of fresh metal fume with a particle size smaller than $0.5{\mu}m\;to\;1{\mu}m$. The fumes originate from heating metals beyond their boiling point, as happens, for example, in welding operations. Oxidation usually accompanies this process. In most cases, this syndrome is due to exposure to zinc oxide fumes; however, other metals like copper, magnesium, cadmium, manganese, and antimony are also reported to produce such reactions. Authors report a case of metal fume fever suspected to be associated with copper fume inhalation. The patient was a 42-year-old male and was a smoker. He conducted inert gas tungsten arc welding on copper-coated materials without safety precautions such as a protective mask and adequate ventilation. Immediately after work, he felt metallic taste in his mouth. A few hours after welding, he developed headache, chilling sensation, and chest discomfort. He also complained of myalgia, arthralgia, feverish sensation, thirst, and general weakness. Symptoms worsened after repeated copper welding on the next day and subsided gradually following two weeks. Laboratory examination showed a transient increase of neutrophil count, eosinophilia, elevated erythrocyte sedimentation rate, and positive C-reactive proteinemia. Blood and urine copper level was also increased compared to his wife. Before this episode, he experienced above complaints several times after welding with copper materials but welding of other metals did not produce any symptoms. It was suggested that copper fume would have induced metal fume fever in this case. Further investigations are needed to clarify their pathogenic mechanisms.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.401-407
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• 2010

We studied the influence of different types of metal electrodes on the performance of solution-processed zinc tin oxide (ZTO) thin-film transistors. The ZTO thin-film was obtained by spin-coating the sol-gel solution made from zinc acetate and tin acetate dissolved in 2-methoxyethanol. Various metals, Al, Au, Ag and Cu, were used to make contacts with the solution-deposited ZTO layers by selective deposition through a metal shadow mask. Contact resistance between the metal electrode and the semiconductor was obtained by a transmission line method (TLM). The device based on an Al electrode exhibited superior performance as compared to those based on other metals. Kelvin probe force microscopy (KPFM) allowed us to measure the work function of the oxide semiconductor to understand the variation of the device performance as a function of the types metal electrode. The solution-processed ZTO contained nanopores that resulted from the burnout of the organic species during the annealing. This different surface structure associated with the solution-processed ZTO gave a rise to a different work function value as compared to the vacuum-deposited counterpart. More oxygen could be adsorbed on the nanoporous solution-processed ZTO with large accessible surface areas, which increased its work function. This observation explained why the solution-processed ZTO makes an ohmic contact with the Al electrode.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.67-71
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• 2014

An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.305-305
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• 2010

It is known that a pulse of electrons of high kinetic energy (1-3 eV) in metals can be generated with the deposition of external energy to the surface such as in the absorption of light or in exothermic chemical processes. These energetic electrons are not in thermal equilibrium with the metal atoms and are called "hot electrons" The concept of photon energy conversion to hot electron flow was suggested by Eric McFarland and Tang who directly measured the photocurrent on gold thin film of metal-semiconductor ($TiO_2$) Schottky diodes [1]. In order to utilize this scheme, we have fabricated metal-semiconductor Schottky diodes that are made of Pt or Au as a metallic layer, Si or $TiO_2$ as a semiconducting substrate. The Pt/$TiO_2$ and Pt/Si Schottky diodes are made by PECVD (Plasma Enhanced Chemical Vapor Deposition) for $SiO_2$, magnetron sputtering process for $TiO_2$, e-beam evaporation for metallic layers. Metal shadow mask is made for device alignment in device fabrication process. We measured photocurrent on Pt/n-Si diodes under AM1.5G. The incident photon to current conversion efficiency (IPCE) at different wavelengths was measured on the diodes. We also show that the steady-state flow of hot electrons generated from photon absorption can be directly probed with $Pt/TiO_2$ Schottky diodes [2]. We will discuss possible approaches to improve the efficiency of photon energy conversion.