• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.6B
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• pp.948-953
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• 2010

In this paper, we propose multi-bit soft error detection method which can use an instruction cache of superscalar CPU architecture. Proposed method is applied to high-speed static RAM for instruction cache. Using 1D parity and interleaving, it has less memory overhead and detects more multi-bit errors comparing with other methods. It only detects occurrence of soft errors in static RAM. Error correction is treated like a cache miss situation. When soft errors are occurred, it is detected by 1D parity. Instruction cache just fetch the words from lower-level memory to correct errors. This method can detect multi-bit errors in maximum 4$\times$4 window.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.10C
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• pp.1425-1432
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• 2004

Because of the high performance with the edge regions, the existing LSE(Least Square Estimation) method provides much better results than other methods. However, since it emphasizes not oがy edge components but also noise components, some part of interpolated images looks like unnatural. It also requires very high computational complexity and memory for implementation. We propose a new LSE interpolation method which requires much lower complexity and memory, but provides better performance than the existing method. To reduce the computational complexity, we propose and adopt a simple sample window and a direction detector to reduce the size of memory without blurring image. To prevent from emphasizing noise components, the hi-linear interpolation method is added in the LSE formula. The simulation results show that the proposed method provides better subjective and objective performance with love. complexity than the existing method.

• Proceedings of the KSRS Conference
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• v.1
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• pp.188-190
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• 2006

A multistage hierarchical clustering technique, which is an unsupervised technique, was suggested in this paper for classifying large remotely-sensed imagery. The multistage algorithm consists of two stages. The local segmentor of the first stage performs regiongrowing segmentation by employing the hierarchical clustering procedure of CN-chain with the restriction that pixels in a cluster must be spatially contiguous. This stage uses a sliding window strategy with boundary blocking to alleviate a computational problem in computer memory for an enormous data. The global segmentor of the second stage has not spatial constraints for merging to classify the segments resulting from the previous stage. The experimental results show that the new approach proposed in this study efficiently performs the segmentation for the images of very large size and an extensive number of bands

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.546-553
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• 2015

Recently, flash cache is widely adopted as the performance accelerator of legacy storage systems. Unlike other cache media, flash cache should be carefully managed as it has peculiar characteristics such as long write latency and limited P/E cycles. In particular, we make two prominent observations that can be utilized in managing flash cache. First, a serious worn-out problem happens when the working-set of a system is beyond the capacity of flash cache due to excessively frequent cache replacement. Second, more than 50% of data has no hit in flash cache as it is a second level cache. Based on these observations, we propose a cache admission control policy that does not cache data when it is first accessed, and inserts it into the cache only after its second access occurs within a certain time window. This allows the filtering of data disruptive to flash cache in terms of endurance and performance. With this policy, we prolong the lifetime of flash cache 2.3 times without any performance degradations.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.221-224
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• 2000

We have successfully demonstrated metal-ferroel-ectric-insulator-semiconductor (MFIS) devices using Al/LiNbO$_{3}$/SiN/Si structure. The SiN thin films were made into metal -insulator- semiconductor (MIS) devices by thermal evaporation of aluminum source in a dot away on the surface. The interface property of MFIS from 1MHz & quasistatic C-V is good and the memory window width is about 1.5V at 0.2V/s signal voltage sweep rate. The gate leakage current density of MFIS capacitors using a aluminum electrode showed the least value of 1x10$^{-8}$ A/$\textrm{cm}^2$ order at the electric field of 300㎸/cm. And the XRD patterns shows the probability of applications of LN for MFIS devices for FeRAMs on amorphous SiN buffer layer.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.1095-1098
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• 1999

We have developed a speaker dependent voice command system(VCS) to control the sunroof in the car using RSC-164 VRP(Voice Recognition Processor). VCS consists of control circuits, microphone, speaker and user switch box. The control circuits include RSC-164, input audio preamplifier, memory devices, and relay circuit for sunroof control. It is designed robustly in various car noisy situations like audio volume, air conditioner, and incoming noise when window or sunroof opened. Each two users can control the car sunroof using seven voice commands on the Super TVS model and five voice commands on the Onyx model. It works well when we drive the car at over 100 km/h with the sunroof opened.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.237.2-237.2
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• 2014

이번 연구는 system-on-panel에 적용하기 위한 비휘발성 메모리의 전하보유시간 및 메모리 윈도우 특성 향상에 관한 연구이다. 이를 위해 SiO2/SiOX/SiOXNY의 메모리 구조를 이용하였으며, 채널층으로 결정화 온도에 따른 수소화된 미세결정 실리콘-게르마늄을 이용하였다. 채널 층으로 사용된 수소화된 미세결정 실리콘-게르마늄은 비정질 실리콘-게르마늄보다 더 낮은 bandgap과 더 적은 defect density로 인하여 더 향상된 전하보유시간 및 메모리 윈도우를 얻을 수 있었다. 결정화가 거의 이루어지지 않은 실리콘-게르마늄 비휘발성 메모리의 경우 약 4.9V의 메모리 윈도우를 얻을 수 있었다. 반면 300oC에서 약 43.4%의 결정화가 이루어진 실리콘-게르마늄의 메모리 윈도우는 약 5.9V로 약 17%의 향상이 있으며, 10년 후 74.5%의 높은 전하보유시간을 가졌다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.69-72
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• 2002

B $i_{3.3}$L $a_{0.7}$ $Ti_3$ $O_{12}$(BLT) 강유전체 박막을 $Al_2$ $O_3$/Si 기판위에 졸-겔(sol-gel)법으로 스핀 코팅하여 Metal-Ferroelectric-Insulator-Silicon (MFIS) 구조를 형성하였다. 박막의 결정화를 위해 as-coated 박막을 산소분위기에서 $650^{\circ}C$ 및 $700^{\circ}C$에서 30분 동안 후속열처리를 실시하였다. BLT 박막의 열처리 온도를 $650^{\circ}C$에서 $700^{\circ}C$로 증가시킴에 따라서 c축으로 우선 배향되는 경향을 보였으며, FWHM 값이 감소하여 결정성이 향상됨을 확인할 수 있었다. $700^{\circ}C$에서 열처리된 BLT 박막의 memory window는 약 2.5V (인가전압 5V)를 나타내었으며, 누설전류는 약 1.5x$10^{-7}$ A/$\textrm{cm}^2$를 나타내었다.다.다.

• Journal of KIISE:Databases
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• v.33 no.6
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• pp.563-577
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• 2006

A stream processor uses resource sharing method for efficient of limited resource in multiple continuous queries. The previous methods process aggregate queries to consist the level structure. So insert operation needs to reconstruct cost of the level structure. Also a search operation needs to search cost of aggregation information in each size of sliding windows. Therefore this paper uses linear structure for optimization of sliding window aggregations. The method comprises of making decision, generation and deletion of panes in sequence. The decision phase determines optimum pane size for holding accurate aggregate information. The generation phase stores aggregate information of data per pane from stream buffer. At the deletion phase, panes are deleted that are no longer used. The proposed method uses resources less than the method where level structures were used as data structures as it uses linear data format. The input cost of aggregate information is saved by calculating only pane size of data though numerous stream data is arrived, and the search cost of aggregate information is also saved by linear searching though those sliding window size is different each other. In experiment, the proposed method has low usage of memory and the speed of query processing is increased.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.24-33
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• 2000

Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET(Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. In our switching model, relative switched charge is 0.74 nC before fatigue, but after the progress of fatigue it reduces to 0.15 nC with the generation of oxygen vacancies. It indicates that the generation of oxygen vacancies strongly suppresses polarization reversal. $C-V_G\;and\;I_D-V_G$ curves in our MFSFET device model exhibit the memory window of 2 V and show the accumulation, the depletion and the inversion regions in capacitance characteristic clearly. The difference of saturation drain current of the device before fatigue in shown by the dual threshold voltages in $I_D-V_G$ curve as 6nA/$cm^2$ and decreases as much as 50% after fatigue. Decrease of the difference of saturation drain currents by fatigue implies that the accumulation of oxygen vacancies with the fatigue should be avoided in the device application. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.