• 대한전자공학회논문지SD
• /
• 제45권9호
• /
• pp.33-40
• /
• 2008

메모리의 속도가 빠르게 향상됨에 따라, 고속 메모리를 테스트하기 위한 테스트 장비가 요구되고 있다. 특히 고속 메모리를 사용자가 원하는 명령어를 그대로 사용하여 효율적으로 테스트할 수 있도록 패턴을 만들어 내는 알고리즘 패턴 생성기(ALPG)가 필요하다. 본 논문에서는 고속 메모리 테스트를 위한 새로운 병렬 ALPG를 제안한다. 제안하는 ALPG는 명령어 분석기를 통해 사용자가 실행하고자 하는 명령어를 그대로 사용하여 고속 메모리 테스트를 위한 패턴을 생성할 수 있다.

• E2M - 전기 전자와 첨단 소재
• /
• 제8권6호
• /
• pp.727-736
• /
• 1995

This paper examines the characteristics and physical properties of the scaled MONOS nonvolatile memory device for low programming voltage EEPROM. The capacitor-type MONOS memory devices with the nitride thicknesses ranging from 41.angs. to 600.angs. have been fabricated. As a result, the 5V-programmable MONOS device has been obtained with a 20ms programming time by scaling the nitride thickness to 57.angs. with a tunneling oxide thickness of 19.angs. and a blocking oxide thickness of 20.angs.. Measurement results of the quasi-static C-V curves indicate, after 10$\^$6/ write/erase cycles, that the devices are degraded due to the increase of the silicon-tunneling oxide interface traps. The 10-year retention is impossible for the device with a nitride less than 129.angs.. However, the MONOS memory device with 10-year retentivity has been obtained by increasing the blocking oxide thickness to 47.angs.. Also, the memory traps such as the nitride bulk trap and the blocking oxide-nitride interface trap have been investigated by measuring the maximum flatband voltage shift and analyzing through the best fitting method.

• Transactions on Electrical and Electronic Materials
• /
• 제6권4호
• /
• pp.154-158
• /
• 2005

Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nano scale components and Si-technology. In this study, molecular electronic devices were fabricated with amino style derivatives as redox-active component. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method and then this LB monolayer is inserted between two metal electrodes. According to the current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. The diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and Al top electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

• 정보과학회 컴퓨팅의 실제 논문지
• /
• 제22권10호
• /
• pp.497-503
• /
• 2016

비휘발성 메모리 같은 차세대 저장장치의 등장으로 저장장치 지연시간은 거의 사라질 것이다. 예전에는 저장장치 지연시간이 가장 큰 문제였기 때문에 소프트웨어의 효율성은 중요한 문제가 아니었다. 하지만 이제는 소프트웨어 오버헤드가 해결해야 할 문제점으로 나타나고 있다. 소프트웨어 오버헤드를 최소화하기 위해 많은 연구자들은 메모리 매핑을 이용한 파일 입출력 기법을 제안하고 있다. 메모리 맵 파일 입출력 기법을 사용하면 기존 운영체제의 복잡한 파일 입출력 스택을 피할 수 있을 뿐 아니라 빈번한 사용자/커널 모드 변환도 최소화할 수 있다. 또한 다수의 메모리 복사 오버헤드도 최소화 할 수 있다. 하지만 메모리 맵 파일 입출력 기법에도 해결해야 할 문제점이 존재한다. 메모리 맵 파일 입출력 메커니즘도 느린 블록 디바이스를 효율적으로 관리하기 위해 설계된 기존 운영체제의 일부이기 때문이다. 본 논문에서는 메모리 맵 파일 입출력의 오버헤드 문제점을 설명하고 실험을 통해 그 문제점을 확인한다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.19-19
• /
• 2008

We investigated the programmable memory characteristics of nanoparticle-based memory devices based on the elementary metal nanoparticles (Co and Au) and their binary mixture synthesized by a micellar route to ordered arrays of metal nanoparticles as charge trapping layers. According to the metal nanoparticle species quite different programming/erasing efficiencies were observed, resulting in the tunable memory characteristics at the same programming/erasing bias conditions. This finding will be a good implication for further device scaling and novel device applications since most processes are based on the conventional semiconductor processes.

• 대한임베디드공학회논문지
• /
• 제11권6호
• /
• pp.335-341
• /
• 2016

As information technology advances rapidly, various smart devices are becoming an essential element in our lives. Smart devices are providing services to users through applications up on the operating system. Operating systems have a variety of rules, such as scheduling applications and controlling hardwares. Among those rules, it is significant to protect private information in the information-oriented society. Therefore, isolation task, that makes certain memory space separated for each application, should highly be guaranteed. However, modern operating system offers the function to access the memory space from other applications for the sake of debugging. If this ability is misused, private information can be leaked or modified. Even though the access authority to memory is strictly managed, there exist cases found exploited. In this paper, we analyze the problems of the function provided in the Android environment that is the most popular and opened operating system. Also, we discuss how to avoid such kind of problems and verify with experiments.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제8권1호
• /
• pp.21-26
• /
• 2008

We fabricated nano-particles of ZnO, $In_2O_3$ and $SnO_2$ by using the chemical reaction between metal thin films and polyamic acid. The average size and density of these ZnO, $In_2O_3$ and $SnO_2$ nano-particles was approximately 10, 7, and 15 nm, and $2{\times}10^{11},\;6{\times}10^{11},\;2.4{\times}10^{11}cm^{-2}$, respectively. Then, we fabricated nano-floating gate memory (NFGM) devices with ZnO and $In_2O_3$ nano-particles embedded in the devices' polyimide dielectrics and silicon dioxide layers as control and tunnel oxides, respectively. We measured the current-voltage characteristics, endurance properties and retention times of the memory devices using a semiconductor parameter analyzer. In the $In_2O_3$ NFGM, the threshold voltage shift (${\Delta}V_T$) was approximately 5 V at the initial state of programming and erasing operations. However, the memory window rapidly decreased after 1000 s from 5 to 1.5 V. The ${\Delta}V_T$ of the NFGM containing ZnO was approximately 2 V at the initial state, but the memory window decreased after 1000 s from 2 to 0.4 V. These results mean that metal-oxide nano-particles have feasibility to apply NFGM devices.

• 정보처리학회논문지D
• /
• 제15D권5호
• /
• pp.589-598
• /
• 2008

최근 휴대용 정보기기 사용이 보편화되어지고, 정보의 디지털화로 인해 휴대용 정보기기에서 처리되어야 하는 정보가 무수히 많아지고 있다. 이로 인해 휴대용 정보기기에서는 정보들을 효과적으로 관리하기 위해 모바일 DBMS의 사용이 요구되고 있다. 또한 휴대용 정보기기에서 보편적으로 사용되는 저장장치는 NAND형 플래시 메모리로 단위 공간당 비용이 기존의 하드디스크에 비해 수십 배 가량 높아 저장 공간의 효율적인 관리가 요구되고 있다. 따라서 본 논문에서는 플래시메모리를 저장매체로 사용하는 모바일 DBMS에서 압축 기법을 사용한 효율적인 데이터 관리 시스템을 제안한다. 제안되는 압축 기반 시스템은 저장 공간의 절약을 가져오고, 데이터 입출력을 줄인다. 이러한 이점은 플래시 메모리의 수명을 연장시키는 효과 또한 기대할 수 있다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1991년도 추계학술대회 논문집
• /
• pp.48-51
• /
• 1991

Short channel Nonvolatile EEPROM memory devices were fabricated to CMOS 1M bit design rule, and reviews the characteristics and applications of SNOSFET. Application of SNOS field effect transistors have been proposed for both logic circuits and nonvolatile memory arrays, and operating characteristics with write and erase were investigated. As a results, memory window size of four terminal devices and two terminal devices was established low conductance stage and high conductance state, which was operated in “1” state and “0”state with write and erase respectively. And the operating characteristics of unit cell in matrix array were investigated with implementing the composition method of four and two terminal nonvolatile memory cells. It was shown that four terminal 2${\times}$2 matrix array was operated bipolar, and two termineal 2${\times}$2 matrix array was operated unipolar.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1994년도 추계학술대회 논문집
• /
• pp.33-36
• /
• 1994

The characteristics of the nonvolatile MONOS memory devices as the nitride thickness is scaled down while maintaining constant tunneling oxide thickness and blocking oxide thickness have been investigated in order to obtain the 5V-programmable E$^2$PROM. We have found that 1V memory window for a 5V programming voltage and 10 year data retention can be achieved in the scaled MONOS memory devices with a 50 blocking oxide, a 57 nitride and a 19 tunneling oxide.