• Journal of KIISE:Computing Practices and Letters
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• 제11권4호
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• pp.305-311
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• 2005

Flash memory software running on cellular phones and PDAs need to be tested extensively to cope with abrupt power and media faults. For those tests, we designed and implemented a Flash memory emulator with fault injection features. The fault injection tester has provided a helpful framework for designing fault recovery schemes and also for analyzing fault damages to the FTL (Flash Translation Layer) and file system for a Flash memory based system. In this paper, we discuss Plash memory fault types and fault injection features implemented on this Flash memory emulator. We then discuss in detail a design flaw revealed during fault injection tests. Specifically, it was revealed that a scheme that was believed to improve reliability instead, turned out to be harmful. In addition, we discuss post-fault behaviors of the FTL and the file system.

• Journal of the Korea Institute of Information Security & Cryptology
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• 제29권2호
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• pp.431-438
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• 2019

Fileless malware uses memory injection attacks to hide traces of payloads to perform malicious works. During the memory injection attack, an attack named "process hollowing" is a method of creating paused benign process like system processes. And then injecting a malicious payload into the benign process allows malicious behavior by pretending to be a normal process. In this paper, we propose a method to detect the memory injection regardless of whether or not the malicious action is actually performed when a process hollowing attack occurs. The replication process having same execution condition as the process of suspending the memory injection is executed, the data set belonging to each process virtual memory area is compared using the fuzzy hash, and the similarity is calculated.

• Journal of Pharmacopuncture
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• 제4권1호
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• pp.49-53
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• 2001

This experiment has investigated the influence of Yamen (Du. 15) point injection on learning and memory dysfunction caused by cerebral ischemia and reprofusion in bilateral cervical general artery combined with bleeding on mouse tail to mimic vascular dementia in human beings. By dividing 40 mice into 4 groups (group1false operation group, group2model group, group3point injection with Cerebrolysin group4point injection with saline.) According to random dividing principles, we observed the influence of Yamen(Du. 15) point injection on the time of swimming the whole course used by model mice which had received treatment for different days in different groups, and the influence of those mice on wrong times they entered blind end. The result showed that point injection with Cerebrolysin and saline could improve learning and memory dysfunction of the mice caused by cerebral ischemia.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.35-38
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• 2002

In this paper, the characteristics of channel hot electron (CHE) injection for the write operation in a NOR-type SONOS flash memory with common source line were investigated. The thicknesses of he tunnel oxide, the memory nitride， and the blocking oxide layers for the gate insulator of the fabricated SONOS devices were $34{\AA}$, $73{\AA}$, and $34{\AA}$, respectively. The SONOS devices compared to floating gate devices have many advantages, which are a simpler cell structure, compatibility with conventional logic CMOS process and a superior scalability. For these reasons, the introduction of SONOS device has stimulated. In the conventional SONOS devices, Modified Folwer-Nordheim (MFN) tunneling and CHE injection for writing require high voltages, which are typically in the range of 9 V to 15 V. However CHE injection in our devices was achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The memory window of about 3.2 V and the write speed of $100{\mu}s$ were obtained. Also, the disturbance and drain turn-on leakage during CHE injection were not affected in the SONOS array. These results show that CHE injection can be achieved with a low voltage and single power supply, and applied for the high speed program of the SONOS memory devices.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.800-803
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• 2002

The MONOS capacitor are fabricated to investigate the carrier trapping due to Fowler-Nordheim tunneling injection. The carrier trapping in scaled multi-dielectric(ONO) depends on the nitride and Op oxide thickness under Fowler_Nordheim tunneling injection. Carriers captured at nitride film could not escape from nitride to gate, but be captured at top oxide and nitride interface traps because of barrier height of top oxide. Therefore, it is expected that the MONOS memory devices using multi dielectric films enhance memory effect and have a long memory retention characteristic.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1991년도 추계학술대회 논문집
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• pp.44-47
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• 1991

Electron injection and memory retention chracteristics of the MNOS devices with thin oxide layer of 23${\AA}$ thick and silicon nitride layer of 1000${\AA}$ thick which are fabricated for this experiment. As a result, pulse amplitude increase oxide current is dominated in linearly increasing region of $\Delta$V$\_$FB/the decreasing region after saturation was due to the increased silicon nirtide current. In low pulse ampiltude $\Delta$V$\_$FB/ is not variated on temperature, but as temperature and pulse amplitude increase. $\Delta$V$\_$FB/ is decreased after saturation. And the decay rate during 10$^4$sec after electron injection was ohiefly dominated by the back tunneling of emission from memory trap to silicon. Memory retention characteristics in V$\_$FB/ stage was better than that of OV retention regardless of injection conditions.

• Nuclear Engineering and Technology
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• 제51권3호
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• pp.692-701
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• 2019

Recently, instrumentation and control (I&C) systems in nuclear power plants have undergone digitalization. Owing to the unique characteristics of digital I&C systems, the reliability analysis of digital systems has become an important element of probabilistic safety assessment (PSA). In a reliability analysis of digital systems, fault-tolerant techniques and their effectiveness must be considered. A fault injection experiment was performed on a safety-critical digital I&C system developed for nuclear power plants to evaluate the effectiveness of fault-tolerant techniques implemented in the target system. A software-implemented fault injection in which faults were injected into the memory area was used based on the assumption that all faults in the target system will be reflected in the faults in the memory. To reduce the number of required fault injection experiments, the memory assigned to the target software was analyzed. In addition, to observe the effect of the fault detection coverage of fault-tolerant techniques, a PSA model was developed. The analysis of the experimental result also can be used to identify weak points of fault-tolerant techniques for capability improvement of fault-tolerant techniques

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 한국지능시스템학회 2008년도 춘계학술대회 학술발표회 논문집
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• pp.247-250
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• 2008

최근 무선통신용 LSI는 배터리 수명과 관련하여, 저전력 동작이 중요시되고 있다. 따라서 Digital CMOS 신호처리와 더불어 동작 가능한 SI (Switched-Current) circuit를 이용하는 Current-mode 신호처리가 주목받고 있다. 그러나 SI circuit의 기본인 Current Memory는 Charge Injection에 의한 Clock Feedthrough라는 문제점을 갖고 있기 때문에, 전류 전달에 있어서 오차를 발생시킨다. 본 논문에서는 Current Memory의 문제점인 Clock Feedthrough의 해결방안으로 CMOS Switch의 연결을 검토하였고, 0.25${\mu}m$ CMOS process에서 Memory MOS와 CMOS Switch의 Width의 관계는 simulation 결과를 통하여 확인하였으며, MOS transistor의 관계를 분명히 하여, 설게의 지침을 제공한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제16권9호
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• pp.771-774
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by 0.35 $\mu\textrm{m}$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the multi-bit operation per cell, charges must be locally frapped in the nitride layer above the channel near the source-drain junction. Programming method is selected by Channel Hot Electron (CUE) injection which is available for localized trap in nitride film. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve are investigated. The multi-bit operation which stores two-bit per cell is investigated. Also, Hot Hole(HH) injection for fast erasing is used. The fabricated SONOS devices have ultra-thinner gate dielectrics and then have lower programming voltage, simpler process and better scalability compared to any other multi-bit storage Flash memory. Our programming characteristics are shown to be the most promising for the multi-bit flash memory.

• Convergence Security Journal
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• 제6권3호
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• pp.59-67
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• 2006

Recently the Personal Computer hacking and game hacking for the purpose of gaining an economic profit is increased in Windows system. Malicious code often uses methods which inject dll or code into memory in target process for using covert channel for communicating among them, bypassing secure products like personal firewalls and obtaining sensitive information in system. This paper analyzes the technique for injecting and executing code into memory area in target process. In addition, this analyzes the PE format and IMPORT table for extracting injected dll in running process in affected system and describes a method for extracting and analyzing explicitly loaded dll files related with running process. This technique is useful for finding and analyzing infected processes in affected system.