• 소성∙가공
• /
• 제12권4호
• /
• pp.388-393
• /
• 2003

Electrolytic polishing is the anodic dissolution process in the transpassive state. It removes non-metallic inclusions and improves mechanical and corrosion resistance of stainless steel. Electrolytic polishing is normally used to remove a very thin layer of material from the surface of a metal object. An electrolyte of phosphoric acid 50% in vol., sulfuric acid 20% in vol. and distilled water 30% in vol. has been used in this study. In the low current density region, there can be found plateau region and material removal process and leveling process occur successively. In this study, an electrochemical polishing process using pulse current is adopted as a new electrochemical polishing process. In electrochemical machining processes, it has been found that pulse electrochemical processes provide an attractive alternative to the electrochemical processes using continuous current. Hence, this study will discuss the electrochemical polishing processes in low current density region and pulse electrochemical polishing.

• 한국정밀공학회지
• /
• 제20권3호
• /
• pp.42-49
• /
• 2003

In this paper, we provide the results of polishing temperature distribution by way of infrared ray measurement system as well as polishing resistance, which can be interpreted as tribological aspects of CMP, using force measurement system. The results include the trend of polishing temperature, its distribution profile and temperature change during polishing. The results indicate that temperature affects greatly to the removal rate. Polishing temperature increases gradually and reaches steady state temperature and the period of temperature change occurs first tens of seconds. Furthermore, the friction force also varies as the same pattern with polishing temperature from high friction to low. These results suggest that the first period of the whole polishing time greatly affects the nonuniformity of removal rate.

• 한국자동차공학회논문집
• /
• 제22권4호
• /
• pp.65-71
• /
• 2014

As an important component of a fuel cell, the bipolar plate comprises a large proportion in the fuel cell's volume, weight and price. The bipolar plate is the most widely used; however, graphite bipolar plate is large in volume, brittle and therefore easily broken during assembling. In addition, due to its poor machinability, production costs a lot, unless mass production. Compared with the graphite bipolar plate, the metal bipolar plate has good machinability, high electric conductivity and strong mechanical strength; however, it corrodes easily and has a high contact resistance, so in order to prevent corrosion and reduce the contact resistance, the basic metal needs to be processed by use of electro polishing and coating. The water which is produced by electrochemical reactions in the fuel cell must be discharged smoothly. In this study, in order to prevent corrosion the processes of electro polishing and CrN coating were used. According to the presence or absence of these processes, the contact angles can be measured and different metal bipolar plates can be made, these plates can be used for comparing and analyzing the performance of the fuel cell.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.525-526
• /
• 2007

Over-polishing is required to completely remove the material of top surface across whole wafer, in spite of a local dishing problem. This paper introduces the two-step CMP process using protective layer and high selectivity slurry, to reduce dishing amount and variation. The 30nm thick protective oxide layer was deposited on the pattern, and then polished with low selectivity slurry to partially remove the projected area while suppressing the removal rate of the recessed area. After the first step CMP process, high selectivity slurry was used to minimize the dishing amount and variation in pattern structure. Experimental result shows that two-step CMP process can be successfully applicable to reduce the dishing defect generated in over-polishing.

• 한국전기전자재료학회논문지
• /
• 제23권5호
• /
• pp.358-363
• /
• 2010

The polishing pad is important element for polishing characteristic such as material removal rate(MRR) and within wafer non-uniformity(WIWNU) in the chemical mechanical planarization(CMP). The result of the viscoelasticity measurement shows that 1st elastic modulus is increased and 2nd elastic modulus is decreased when the top pad is thickened. The finite element analysis(FEA) was conducted to predict characteristic of polishing behavior according to the pad thickness. The result of polishing experiment was similar with the FEA, and it shows that the 1st elastic modulus affects instantaneous deformation of pad related to MRR. And the 2nd elastic modulus has an effect on WIWNU due to the viscoelasticity deformation of pad.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2006년도 춘계학술대회 논문집
• /
• pp.497-498
• /
• 2006

Tribological properties of a Magneto-Rheological(MR) fluid in a polishing process are studied. For this polishing process, abrasive wear model is proposed as a function of shear force, normal force and actual mean velocity of MR particles at workpiece surface. Experimental conditions are changed by varying the gap distance between workpiece and tool and the rotational speed of tool. From the experimental results, a modified Stribeck curve is obtained, and the friction coefficient turns out to have linear relationship with a modified Sommerfeld number. The validity of the wear model is supported by additional experiments performed for measuring material removal rates.

• 한국표면공학회지
• /
• 제52권6호
• /
• pp.350-356
• /
• 2019

In this study, the effect of mechanical polishing of carbon steel on the tribological properties of manganese phosphate coating on carbon steel has investigated. The microstructure, surface morphology and chemical composition were analyzed by SEM, EDS, and XRD. The surface roughness test was carried out in order to calculate Rvk value by 3D laser microscopy. Also, the tribology property of manganese phosphate coating was tested by ball-on disk. In the results of EDS analysis, coating layer consists of elements such in Mn, P, Fe, and O. XRD showed that (Mn,Fe)₅H₂(PO₄)₄·4H₂O in manganese phosphate coating layer was formed by the chemical reaction between manganese phosphate and elements in carbon steel. As the mechanical polishing degree increased, the friction coefficient was reduced. The rougher the mechanical polishing degree, the better corrosion resistance was obtained.

• 대한기계학회논문집A
• /
• 제33권3호
• /
• pp.196-200
• /
• 2009

Lithium niobate ($LN:LiNbO_3$) is a compound of niobium, lithium and oxygen. The characteristics of LN are piezoelectricity, ferroelectricity and photoelectricity, and which is widely used in surface acoustic wave (SAW). To manufacture LN devices, the LN surface should be a smooth surface and defect-free because of optical property, but the LN material is processed difficult b traditional processes such as grinding and mechanical polishing (MP) because of its brittleness. To decrease defects, chemical mechanical polishing (CMP) was applied to the LN wafer. In this study, the suitable parameters such as down force and relative velocity, were investigated for the LN CMP process To improve roughness, the LN CMP was performed using the parameters that were the highest removal rate among process parameters. And, evaluation of optical property was performed by the optical reflectance.

• Tribology and Lubricants
• /
• 제35권6호
• /
• pp.323-329
• /
• 2019

Sapphire is currently used as a substrate material for blue light-emitting diodes (LEDs). The market for sapphire substrates has expanded rapidly as the use of LEDs has extended into various industries. However, sapphire is classified as one of the most difficult materials to machine due to its hardness and brittleness. Recently, a lap-grinding process has been developed to combine the lapping and diamond mechanical polishing (DMP) steps in a single process. This paper studies, the effect of wafer surface roughness on the chemical mechanical polishing (CMP) process by pressure and abrasive concentration in the lap-grinding process of a sapphire wafer. In this experiment, the surface roughness of a sapphire wafer is measured after lap-grinding by varying the pressure and abrasive concentration of the slurry. CMP is carried out under pressure conditions of 4.27 psi, a plate rotation speed of 103 rpm, head rotation speed of 97 rpm, and slurry flow rate of 170 ml/min. The abrasive concentration of the CMP slurry was 20wt, implying that the higher the surface roughness after lapgrinding, the higher the material removal rate (MRR) in the CMP. This is likely due to the real contact area and actual contact pressure between the rough wafer and polishing pad during the CMP. In addition, wafers with low surface roughness after lap-grinding show lower surface roughness values in CMP processes than wafers with high surface roughness values; therefore, further research is needed to obtain sufficient surface roughness before performing CMP processes.

• Tribology and Lubricants
• /
• 제31권3호
• /
• pp.79-85
• /
• 2015

RC delay is a critical issue for achieving high performance of ULSI devices. In order to minimize the RC delay time, we uses the CMP process to introduce high-conductivity Cu and low-k materials on the damascene. The low-k materials are generally soft and fragile, resulting in structure collapse during the conventional high-pressure CMP process. One troubleshooting method is electrochemical mechanical polishing (ECMP) which has the advantages of high removal rate, and low polishing pressure, resulting in a well-polished surface because of high removal rate, low polishing pressure, and well-polished surface, due to the electrochemical acceleration of the copper dissolution. This study analyzes an electrochemical state (active, passive, transpassive state) on a potentiodynamic curve using a three-electrode cell consisting of a working electrode (WE), counter electrode (CE), and reference electrode (RE) in a potentiostat to verify an electrochemical removal mechanism. This study also tries to find optimum conditions for ECMP through experimentation. Furthermore, during the low-pressure ECMP process, we investigate the effect of current density on surface roughness and removal rate through anodic oxidation, dissolution, and reaction with a chelating agent. In addition, according to the Faraday’s law, as the current density increases, the amount of oxidized and dissolved copper increases. Finally, we confirm that the surface roughness improves with polishing time, and the current decreases in this process.