• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.70-70
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• 2009

In this paper, we proposed 2500V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500V NPT IGBT according to size of device. In results, we obtaind design parameter with 375um n-drift thickness, 15um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000V NPT IGBT devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.8
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• pp.501-504
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• 2014

This paper was developed and described core-process to implement low on resistance which was the most important characteristics of SJ (super junction) MOSFET. Firstly, using process-simulation, SJ MOSFET optimal structure was set and developed its process flow chart by repeated simulation. Following process flow, gate level process was performed. And source and drain level process was similar to genral planar MOSFET, so the process was the same as the general planar MOSFET. And then to develop deep trench process which was main process of the whole process, after finishing photo mask process, we developed deep trench process. We expected that developed process was necessary to develop SJ MOSFET for automobile semiconductor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.29-34
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• 1993

In this paper, we used one-dimensional process simulator, SUPREM-II, and two-dimensional device simulator, MINIMOS 4.0 to extract optimal process parameter that can minimize degradation of device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derieved the relationship between process parameter and device characteristics. Here we have presented a method to extract process parameters from design trend curve(DTC) obtained by process and device simulations. We parameters to verify the validity of the DTC method. The experimental result of 0.8 $\mu\textrm{m}$ channel length devices that have been fabricated with optimal that reduces short channel effects, that is, good drain current-voltage characteristics, low body effects and threshold voltage of 1.0 V, high punchthrough and breakdown voltage of 12 V, low subthreshold swing(S.S) values of 105 mV/decade.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.23 no.6
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• pp.627-633
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• 2010

This paper presents a method for identifying the parameter set of inelastic constitutive equations, which is based on an Evolutionary Algorithm. The advantage of the method is that appropriate parameters can be identified even when the measured data are subject to considerable errors and the model equations are inaccurate. The design of experiments suited for the parameter identification of a material model by Chaboche under the uniaxial loading and stationary temperature conditions was first considered. Then the parameter set of the model was identified by the proposed method from a set of experimental data. In comparison to those by other methods, the resultant stress-strain curves by the proposed method correlated better to the actual material behaviors.

• Transactions of the Korean Society of Pressure Vessels and Piping
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• v.15 no.2
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• pp.64-70
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• 2019

In recent years, attention has been paid to the integrity of steam generator (SG) tubes due to severe accident and beyond design basis accident conditions. In these transient conditions, steam generator tubes may be damaged by high temperature and pressure, which might result in a risk of fission products being released to the environment due to the failure. Alloy 690 which has increased the Cr content has been replaced for the SG tube due to its high corrosion resistance against stress corrosion cracking (SCC). However, there is lack of research on the high temperature creep rupture and life prediction model of Alloy 690. In this study, creep test was performed to estimate the high temperature creep rupture life of Alloy 690 using tube specimens. Based on manufacturer's creep data and creep test results performed in this study, creep life prediction was carried out using the Larson-Miller (LM) Parameter, Orr-Sherby-Dorn (OSD) parameter, Manson-Haford (MH) parameter, and Wilshire's approach. And a hyperbolic sine (sinh) function to determine master curves in LM, OSD and MH parameter methods was used for improving the creep life estimation of Alloy 690 material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.531-534
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• 2004

In Recent, it became necessary to develope the technology about electrodeless fluorescent lamp according to demand of the electodeless fluorescent lamp system that used higher efficiency and advantage of long-lifetime. Especially, in the electordeless fluorescent lamp which used H-mode, efficiency of lamp is decided from matching parameter of antena and inverter. So it is of the utmost importance to design antena and inverter Therefore, this paper used a transformer principle for efficiency rising of electrodeless fluorescent lamp and interpreted an equivalent circuit, used an impedance analyzer in order to confirm a performance enhancement of lamp along design of antenna, and confirmed parameter characteristic of R, L, C, Z, Q-factor along a change of magnetic flux density. Also, this paper confirmed a luminance characteristic of electordeless lamp along parameter change with measuring optical characteristic along a change of magnetic flux density

• Earthquakes and Structures
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• v.3 no.6
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• pp.805-820
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• 2012

An enhanced and efficient methodology is proposed for evaluating the robustness of an uncertain structure with passive dampers. Although the structural performance for seismic loads is an important design criterion in earthquake-prone countries, the structural parameters such as storey stiffnesses and damping coefficients of passive dampers are uncertain due to various factors or sources, e.g. initial manufacturing errors, material deterioration, temperature dependence. The concept of robust building design under such uncertain structural-parameter environment may be one of the most challenging issues to be tackled recently. By applying the proposed method of interval analysis and robustness evaluation for predicting the response variability accurately, the robustness of a passively controlled structure can be evaluated efficiently in terms of the so-called robustness function. An application is presented of the robustness function to the design and evaluation of passive damper systems.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.21 no.4
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• pp.333-338
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• 2011

This paper describes the design process of floor damping material optimization to reduce structure borne noise. This process uses finite element analysis(FEA) along with experimental techniques to complement each other. The objective of this approach was to develop an optimized damping material application layout and thickness at the initial design stage. The first step is to find the sensitivity areas of vehicle body without damping material applied using FEA. In order to determine the high vibration areas of the floor panel, the velocity was measured using a scanning laser vibrometer from 20 Hz to 300 Hz. To excite the floor panel vibration, shaker was placed at the front suspension attachment point. The second step is the optimization process to determine the light weight solution of damping material. The design guideline of damping material was suggested that the lightweight solution was verified using test result of road noise. Design engineer could efficiently decide the design variable of damping material using parameter analysis results in early design stage.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.9
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• pp.1408-1414
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• 2004

The use of flip-chip technology has many advantages over other approaches for high-density electronic packaging. ACF (anisotropic conductive film) is one of the major flip-chip technologies, which has short chip-to-chip interconnection length, high productivity, and miniaturization of package. In this study, thermal fatigue lift of ACF bonding flip-chip package has been predicted. Elastic and thermal properties of ACF were measured by using DMA and TMA. Temperature dependent nonlinear hi-thermal analysis was conducted and the result was compared with Moire interferometer experiment. Calculated displacement field was well matched with experimental result. Thermal fatigue analysis was also conducted. The maximum shear strain occurs at the outmost located bump. Shear stress-strain curve was obtained to calculate fatigue life. Fatigue model for electronic adhesives was used to predict thermal fatigue life of ACF bonding flip-chip packaging. DOE (Design of Experiment) technique was used to find important design factors. The results show that PCB CTE (Coefficient of Thermal Expansion) and elastic modulus of ACF material are important material parameters. And as important design parameters, chip width, bump pitch and bump width were chose. 2$^{nd}$ DOE was conducted to obtain RSM equation far the choose 3 design parameter. The coefficient of determination ($R^2$) for the calculated RSM equation is 0.99934. Optimum design is conducted using the RSM equation. MMFD (Modified Method for feasible Direction) algorithm is used to optimum design. The optimum value for chip width, bump pitch and bump width were 7.87mm, 430$\mu$m, and 78$\mu$m, respectively. Approximately, 1400 cycles have been expected under optimum conditions. Reliability analysis was conducted to find out guideline for control range of design parameter. Sigma value was calculated with changing standard deviation of design variable. To acquire 6 sigma level thermal fatigue reliability, the Std. Deviation of design parameter should be controlled within 3% of average value.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.799-805
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• 1996

In short channel MOSFET, it is very important to establish optimal process conditions because of variation of device characteristics due to the process parameters. In this paper, we used process simulator and device characteristics caused by process parameter variation. From this simulation, it has been ' derived to the dependence relations between process parameters and device characteristics. The experimental result of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.