• 한국생산제조학회지
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• 제7권6호
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• pp.117-125
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• 1998

The paper attempts to estimate the incubation time of a cavity in the interface between a power law creep particle and an elastic matrix subjected to a uniaxial stress. Since the power law creep particle is time dependent, the stresses in the interface relax. The volume free energy associated with Helmholtz free energy includes strain energies caused by applied stress and dislocations piled up in interface(DPI). The energy due to DPI is found by modifying the result of Dundurs and Mura[4]. The volume free energies caused by both applied stress and DPI are a function of the cavity size(r) and elapsed time(t) and arise from stress relaxation in the interface. Critical radius $r^*$ and incubation time $t^*$ to maximise Helmholtz free energy is found in present analysis. Also, kinetics of cavity formation are investigated using the results obtained by Riede [7]. The incubation time is defined in the analysis as the time required to satisfy both the thermodynamic and kinetic conditions. Through the analysis it is found that 1) strain energy caused by the applied stress does not contribute significantly to the thermodynamic and kinetic conditions of a cavity formation, 2) in order to satisfy both thermodynamic and kinetic conditions, critical radius $r^*$ decreases or holds constant with increase of the time until the kinetic condition(eq. 2.3) is satisfied. there for the cavity may not grow right after it is formed, as postulated by Harris [15], and Ishida and Mclean [16], 3) the effects of strain rate exponent (m), material constant $\sigma$0, volume fraction of the particle to matrix(f)and particle size on the incubation time are estimated using material constants of the copper as matrix.

• 한국방재학회 논문집
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• 제9권4호
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• pp.107-113
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• 2009

본 연구는 점착성 미립자의 침전률에 대한 플록의 영향에 관한 것이다. 연구 진행시 플록 밀도와 입경변화의 영향도 고려하였다. 플록입자의 침전속도는 정지수면에서 측정되었다. 플록 입경과 밀도는 수정된 Stokes방정식에 유체의 밀도, 입자의 밀도, 점성계수 및 측정된 침전속도와 입경과의 관계식으로부터 얻은 플록 차원을 이용하여 분석되었다. 석영과 알루미나의 플록지름은 초기농도가 증가함에 따라 증가되었으며, 염도농도의 증가에 따른 석영의 플록된 입경은 $0.8{\sim}10$ ${\mu}m$이다. 플록밀도는 입경이 증가함에 따라 감소하였다. 플록 침전속도와 입경의 관계는 로그표위에 직선식으로 표현된다. 플록 차원($=n_f$)은 초기농도가 증가할 경우 2.65이며, 염도가 증가할 때 2.93이다. 침전속도를 예측하기 위한 비례상수(n)는 제시되었으며, 그 범위는 $1{\sim}1.93$이다.

• 한국강구조학회 논문집
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• 제10권4호통권37호
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• pp.691-700
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• 1998

본 연구에서는 역대칭 또는 비대칭 적층쉘에 대한 Von Karman-Donnell 운동방정식을 기초로 한 다중 모드 접근법을 이용하여 양단이 단순지지 되고 다른 임의지지가 단순 또는 고정지지인 원통 쉘의 비선형 거동에 대해 연구하였다. 방정식은 모든 경계조건에 대해 만족하며, 변위함수는 최저 진동모드와 원주 방향의 변위의 연속성 조건을 만족하는 것으로 한다 비선형 진동 방정식은 Galerkin 법을 이용하여 유도하였고, 비선형 진동수는 조화평균법을 이용하여 적층 매개변수, 재료 상수, 종횡비 및 진동 진폭의 함수로서 표시하였다. 초기 진폭의 영향에 대해서는 4가지 형태의 경계조건에 대한 비선형 진동 결과를 비교 검토하였다.

• 한국전기전자재료학회논문지
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• 제27권6호
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• pp.367-371
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• 2014

We investigated dielectric relaxation properties of $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3$ ceramics by addition (0~0.3 wt%) of $(Ba,Ca)SiO_3$ glass frit. All composition of $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3$ added $(Ba,Ca)SiO_3$ glass frit showed the same crystallographic properties, coexistence of orthorhombic and tetragonal phase. By increasing addition of $(Ba,Ca)SiO_3$ glass frit, the Curie temperatures of $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3$ ceramics were decreased, whereas maximum dielectric constants of $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3$ ceramics were dramatically increased. Especially the deviations of Curie temperature $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3$ ceramics were increased by increasing amount of $(Ba,Ca)SiO_3$ glass frit, and it indicated that $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3$ ceramics added $(Ba,Ca)SiO_3$ glass frit have relaxor characteristics.

• 한국전기전자재료학회논문지
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• 제24권7호
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• pp.537-542
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• 2011

Recently, n-InZnO/p-CuO oxide diode has attracted great attention due to possible application for selector device of 3-dimensional cross-point resistive memory structures. To investigate the detailed properties of InZnO (IZO), we have deposited IZO films on the fused quartz substrate using PLD (pulsed laser deposition) method at oxygen pressure of 1~100 mTorr and substrate temperature of RT$\sim600^{\circ}C$. The influence of oxygen pressure and substrate temperature on structural, optical and electrical of IZO films is analyzed using XRD (x-ray diffraction), SEM (scanning electron microscopy), UV-Vis spectrophotometry, spectroscopic ellipsometry (SE) and hall measurements. The XRD results shows that the deposited thin films are polycrystalline over $300^{\circ}C$ of substrate temperature independent of oxygen pressure. The resistivity of films was increased as oxygen pressure and substrate temperature decrease. The thickness and optical constants of the deposited films measured with UV-Vis spectrophotometer were also compared with those of broken SEM and SE results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.77-80
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• 1995

GaSb crystals were grown by the vertical Bridgman method. P-type GaSb crystals were grown with Ga:Sb=1:1 at % ratio without dopants and with Te, respectively. Also, GaSb:Te crystals were investigated. Lattice constants were 6.117${\AA}$ for p-type. The carrier concentration, the resistivity, and the carrier mobility measured by the van der Pauw method were p≡8 x $10^{16}$$cm^{-3}$, p≡0.20$\Omega$-cm, ${\mu}$$_{n}$≡$400\textrm{cm}^2$$V^{-1}$$sec^{-1}$ for p-type, n≡1 x $10^{17}$$cm^{-3}$, p≡0.15 $\Omega$-cm, ${\mu}$$_{n}$≡$500\textrm{cm}^2$$V^{-1}$$sec^{-1}$ for n-type at 300K. In case of treating with metal ion of $Ru^{+3}$, $Pt^{+1}$, p≡2 x $10^{17}$$cm^{-3}$, p≡0.08$\Omega$-cm, ${\mu}$$_{n}$≡420$\textrm{cm}^2$$V^{-1}$$sec^{-1}$ for p-type, n≡2.5 x $10^{17}$$cm^{-13}$, p≡0.07 $\Omega$-cm, ${\mu}$$_{n}$≡520$\textrm{cm}^2$$V^{-1}$$sec^{-1}$ for n-type were obtained.

• 한국전산구조공학회논문집
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• 제24권5호
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• pp.531-542
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• 2011

본 논문에서는 3차원 유한요소법과 수치시간적분을 사용하여 교량 내 단면의 시간에 따른 온도분포를 결정하였다. 초기재령 구조물의 거동을 효과적으로 모사하기 위해 시간에 따라 변하는 재료특성과 온도분포에 따른 열응력을 고려하였다. 온도분포는 비선형이며 열전도율, 비열, 콘크리트의 수화열, 대류계수 등의 재료 상수들과 태양열에 영향을 받으므로 주요한 영향인자인 시공시의 계절, 풍속, 교량 상판포장에 대한 영향을 고려하였다. 본 논문의 해석결과와 이전의 다른 해석연구와 비교를 통해 제안된 수치모델의 타당성을 검증하였다. 네 개의 다른 교량 단면의 연구를 토대로 더 타당한 설계결과를 얻기 위해서는 콘크리트 교량에서의 크리프 변형이 고려되어야 된다는 점과 도로교설계기준에서 제시한 온도분포는 개선될 필요가 있다는 것을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.281-287
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• 2002

The stochiometric composition of AgGaS$_2$ polycrystal source materials for the AgGaS$_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal AgGaS$_2$ has tetragonal structure of which lattice constant a$\sub$0/ and c$\sub$0/ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. AgGaS$_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal AgGaS$_2$ by the Hot Wall Epitaxy (100) system. The source and substrate temperature were 590$^{\circ}C$ and 440$^{\circ}C$ respectively. The crystallinity of the grown AgGaS$_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for AgGaS$_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}$ : 8.695${\times}$10$\^$-4/ eV/K, and ${\beta}$ = 332 K. From the photocurrent spectra by illumination of polarized light of the AgGaS$_2$/GaAs epilayer, we have found that crystal field splitting ΔCr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pain are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.131-134
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• 2002

The effect of the addition on the densification, low temperature sintering, and microwave dielectric properties of the Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$/(CLNT) was investigated. $Bi_2O_3$ additives improved the dencification and reduced the sintering temperature from $1150^{\circ}C$ to $900^{\circ}C$ of CLNT microwave dielectric ceramics. As increasing $Bi_2O_3$ contents, the dielectric constants and bulk density were increased. The quality factor, however, was decreased slighty. The temperature coefficients of the resonant frequency shifted positive value as increasing $Bi_2O_3$ contents. The dielectric properties of Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$ and Ca[($Li_{1/3}Nb_{2/3}$)$_{0.8}Ti_{0.2}$]$O_{3-{\delta}}$ with 5wt% $Bi_2O_3$ sintered at $900^{\circ}C$ for 3h were $\varepsilon_{r}$=20, 35 Q.$f_{0}$=6500, 11,000 GHz, $\tau_{f}$=4, 13 ppm/$^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.177-180
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• 2002

Thickness dependence of crystallographic orientation of diol based sol-gel derived PZT(52/48) films on dielectric and piezoelectric properties was investigated The thickness of each layer by one time spinning was about 0.2 $\mu\textrm{m}$, and crack-free films was successfully deposited on 4 inches Pt/Ti/SiO$_2$/Si substrates by 0.5 mol solutions in the range from 0.2 $\mu\textrm{m}$ to 3.8 $\mu\textrm{m}$. Excellent P-E hysteresis curves were achieved without pores or any defects between interlayers. As the thickness increased , the (111) preferred orientation disappeared from 1$\mu\textrm{m}$ to 3 $\mu\textrm{m}$ region, and the orientation of films became random above 3 $\mu\textrm{m}$. Dielectric constants and longitudinal piezoelectric coefficient d$\_$33/, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of 0.8 7m. A micromachined piezoelectric cantilever have been fabricated using 0.8 $\mu\textrm{m}$ thickness PZT (52/48) films. PZT films were prepared on Si/SiN$\_$x/SiO$_2$/Ta/Pt substrate and fabricated unimorph cantilever consist of a 0.8 fm thick PZT layer on a SiNx elastic supporting layer, which becomes vibration when ac voltage is applied to the piezoelectric layer. The dielectric constant (at 100 kHz) and remanent polarization of PZT films were 1050 and 25 ${\mu}$C/$\textrm{cm}^2$, respectively. Electromechanical characteristics of the micromachined PZT cantilever in air with 200-600 $\mu\textrm{m}$ lengths are discussed in this presentation.