• 한국기계가공학회지
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• 제17권4호
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• pp.113-122
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• 2018

A hydraulic breaker is an attachment of an excavator, and it crushes stones. Recently, research to reduce the impact and noise of breakers are ongoing. In this paper, a method to improve the upper, lower, and side dampers, which act as insulation for the attenuation of vibration during breaker operation, is studied through testing and simulation. To obtain the nonlinear material constants required for the simulation, the biaxial tensile test was performed with urethane, which is a material used for dampers. The existing parts and the improved parts were compared and evaluated using the LS-DYNA program. As a result, 50% of the equivalent stress was reduced in the bracket body of the hydraulic breaker, and the equivalent stress of the side damper was also decreased. We verified that the fatigue conditions were satisfied by performing a fatigue analysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.185-188
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• 1996

The doped n-type $Al_{x}Ga_{1-x}Sb$ crystals were grown by the vertical Bridgman method at composition ratio x=0, x=0.1, x=02 respectively. The lattice constants of the $Al_{x}Ga_{1-x}Sb$ crystals were 6.096${\AA}$, 6.097${\AA}$, 6.106${\AA}$ at composition ratio respectively. The carrier concentration, the resistivity, and the carrier mobility measured by the Van der Pauw method at x-0 were n≡1 x $10^{17}$$cm^{-3}$, $\rho$≡0.15 ${\Omega}$-cm, ${\mu}$$_{n}$≡500 $\textrm{cm}^2$$V^{-1}$$sec^{-1}$ at 300K. The carrier concentration, the resistivity, and the carrier mobility measured by the Van der Pauw method at x=0.1 were n≡2.96 x $10^{15}$$cm^{-3}$, $\rho$≡103 $\textrm{cm}^2$$V^{-1}$$sec^{-1}$ at 300K.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.207-213
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• 1996

A ternary compound semiconductor $Al_{x}$-Ga/1-x/Sb crystals which have energy gap from 0.7eV to 1.6ev at room temperature with the composition ratio were grown by using the vertical Bridgman method. The characteristics of $Al_{x}$-Ga/1-x/Sb were investigated in this study. The lattice constants of $Al_{x}$-Ga/1-x/Sb crystals with the composition ratio were appeared from 6.096$\AA$ to 6.135$\AA$ with the composition ratio. The electrical properties of the $Al_{x}$-Ga/1-x/Sb crystals measured the Hall effect by van der Pauw method at the magnetic field of 3 kilogauss and at room temperature. The resistivity of Te-doped $Al_{x}$-Ga/1-x/Sb crystals increased from 0.771 $\Omega$-cm to 5 $\Omega$-cm at room temperature with increasing the composition ratio. The mobility of Te-doped $Al_{x}$-Ga/1-x/Sb crystals varied with the composition ratio x, within the following three different regions, such as GaSb-like (0$\leq$x$\leq$0.3), intermediate (0.3$\leq$x$\leq$0.4) and AlSb-like (0.4$\leq$x$\leq$1).eq$1).

• 한국전기전자재료학회논문지
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• 제16권11호
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• pp.969-974
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• 2003

HgGa$_2$S$_4$ single crystals were grown by the chemical transport reaction method. The HgGa$_2$S$_4$ single crystal crystallized into a defect chalcopyrite structure (I 4). The lattice constants of the single crystal were found to be a = 5.635 $\AA$ and c = 10.473 $\AA$. The direct and indirect optical energy gaps were found to be 2.84eV and 2.78eV, respectively. Photoluminescence peaks of HgGa$_2$S$_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• 마이크로전자및패키징학회지
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• 제8권3호
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• pp.31-36
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• 2001

고온용 정전기척(high-temperature electrostatic chuck, HTESC)에 적합한 특성의 유전재료를 개발하였다. 유전층의 전기비저항과 유전상수 값은 HTESC가 적합하게 작동하기에 필요한 요구조건을 만족하였으며, 하부절연층재료와 열팽창계수가 유사하여 구조적인 안정성이 확보되었다. 유전층과 절연 층간의 접합층 재료로는 입자오염 문제의 최소화를 위해 붕규산염 유리재료를 선택하였고, 전극재료로는 은을 사용하였다. 상부유전 층과 하부절연층 사이에서 붕규산염 유리는 안정되게 접합되었으며, 우려 되었던 은전극의 유전층이나 유리층과의 확산 및 반응이 관찰되지 않았다. 제조된 HTESC의 척킹(chucking)특성은 상용 HTESC에 비하여 우수하게 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.341-344
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• 1999

The effects of post annealing treatments of ferroelectrlclty in PZT(P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ thin film deposited on Pt/ $SiO_2$/Si substrate by RF-Magnetron sputtering methode was Investigated. Analyses by RTA(Rapid Thermal Annealing) treatments reveled that the crystallization process strongly depend on the healing temperature. The Perovskite structure with strong PZT (101) plan was obtained by RTA treatments at 75$0^{\circ}C$ With increasing RTA temperature of PZI thin films, the coercive field and remanent Polarization decreased, while saturation polarization( $P_{r}$) was decreased. P-E curves of Pt/PZT/Pt capacitor structures demonstrate typical hysteresiss loops. The measure values of $P_{r}$,. $E_{c}$ and dielectric constants by post annealed at 75$0^{\circ}C$ were 38 $\mu$C/$\textrm{cm}^2$ 35KV/cm and 974, respectively. Switching polarization versus fatigue characteristic showed 12% degradation up to 10$^{7}$ cycles.s.s.s.s.s.s.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집
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• pp.47-52
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• 2004

$HgGa_2S_4$ single crystals were grown by the chemical transport reaction method. The $HgGa_2S_4$ single crystal crystallized into a defect chalcopyrite structure $(I\bar{4})$. The lattice constants of the single crystal were found to be a=5.635 ${\AA}$ and c=10.473 ${\AA}$. The direct and indirect optical energy gaps were found to be 2.84 eV and 2.78 eV, respectively. Photoluminescence peaks of $HgGa_2S_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• The Journal of the Acoustical Society of Korea
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• 제29권1E호
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• pp.38-44
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• 2010

This paper is based on our comments and proposed amendments to the documents, Annex A, Phantom for determining Maximum Depth of Penetration, and Annex B, Local Dynamic Range Using Acoustical Test Objects 87/400/CDV. IEC 61391-2 Ed. 1.0 200X, prepared by IEC technical Committee 87; Ultrasonics. The documents are concerned with the influence of microstructure of reference target material on the ultrasonic backscattering. Previous works on the attenuation due to backreflection and backscattering of reference target materials are reviewed. The drawback to the use of ungraded stainless steel and metallic materials without microstructural data such as, crystal structure, basic acoustic data of sound velocity and attenuation, grain size, roughness and elastic constants has been discussed. The analysis suggested that the insightful conclusion can be made by differentiating the influence arising from target size and microstructure on the backscattering measurements. The microstructural parameters are associated with physical, geometrical, acoustical and mechanical origins of variation with frequency. Further clarification of such a diverse source mechanisms for ultrasonic backscattering would make the target material and its application for medical diagnosis and therapy simpler and more reliable.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.276-279
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• 2011

This work, the etching characteristics of $Ba_2Ti_9O_{20}$(BTO) thin films were investigated using an inductively coupled plasma (ICP) of $Ar/Cl_2$ gas mixture. The etch rate of BTO thin films as well as the $BTO/SiO_2$ and BTO/PR etch selectivity were measured as functions of $Ar/Cl_2$ mixing ratio (0~100% Ar) at a constants gas pressure (6 mTorr), total gas flow rate (50 sccm), input power (700 W) and bias power (200 W). The etch rate of BTO thin films decreased with increasing Ar fraction. To analyze the etching mechanism an optical emission spectroscopy (OES), double Langmuir probe(DLP) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out.

• Steel and Composite Structures
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• 제18권5호
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• pp.1291-1303
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• 2015

Damage caused by low velocity impact is so dangerous in composites because although in most cases it is not visible to the eye, it can greatly reduce the strength of the composite material. In this paper, damage development in U-section glass/polyester pultruded beams subjected to low velocity impact was considered. Different failure criteria such as Maximum stress, Maximum strain, Hou, Hashin and the combination of Maximum strain criteria for fiber failure and Hou criteria for matrix failure were programmed and implemented in ABAQUS software via a user subroutine VUMAT. A suitable degradation model was also considered for reducing material constants due to damage. Experimental tests, which performed to validate numerical results, showed that Hashin and Hou failure criteria have better accuracy in predicting force-time history than the other three criteria. However, maximum stress and Hashin failure criteria had the best prediction for damage area, in comparison with the other three criteria. Finally in order to compare numerical model with the experimental results in terms of extent of damage, bending test was performed after impact and the behavior of the beam was considered.