Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

A Study on the Optical Properties of HgGa2S4 Single Crystal

HgGa2S4 단결정의 광학적 특성연구

  • Published : 2003.11.01
Download PDF
⟨ Previous Next ⟩

Abstract

HgGa$_2$S$_4$ single crystals were grown by the chemical transport reaction method. The HgGa$_2$S$_4$ single crystal crystallized into a defect chalcopyrite structure (I 4). The lattice constants of the single crystal were found to be a = 5.635 $\AA$ and c = 10.473 $\AA$. The direct and indirect optical energy gaps were found to be 2.84eV and 2.78eV, respectively. Photoluminescence peaks of HgGa$_2$S$_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

Keywords

References

  1. Z. Anorg. Allg. Chem. v.279 Uber ternare challkogenide des Alum-miums, galliums und indiums mit zink, cadmium und quecksilber H.Hahn;G.Frank;W.Klingler;A.Storger;G.storger https://doi.org/10.1002/zaac.19552790502
  2. Solid State Phys.(Advances in Research and Applications) v.36 Beyond the binaries-the chalcopyrite and related semiconducting compounds A.Miller;A.Mackinnon;D.Weaire
  3. Physica v.7 Optical and eletrical properties of ternary chalcogenides L.A.Beun;R.Nitsche;M.Lichtensteiger
  4. Sov. Phs. -Semicond. v.33 Production and properties of In/HgGa₂S₄ schottky barriers V. Yu. Rud;Yu. V. Rud;M.C.Ohmer;P.G.Schunemen
  5. J. Cryst. Growth v.174 Synthesis and growth of HgGa₂S₄ crystals P.G.Schunemann;T.M.Pollak https://doi.org/10.1016/S0022-0248(96)01158-X
  6. Opt. Lett. v.25 Mercury thiogallate mid-infrared femtoscond optical parametric gonerator pumped at 1.25㎛ by a Cr:rorsterite regenerative amplifier F.Rotermund;V.Petrov https://doi.org/10.1364/OL.25.000746
  7. Opt. Comm. v.185 Difference-frequency generation of intense femtosecond pulses in the mid-IR(4-12㎛)using HgGa₂S₄ and AgGaS₂ F.Rotermund;V.Petrov;F.Noack https://doi.org/10.1016/S0030-4018(00)00987-1
  8. Jpn. J. Appl. Phys. v.40 Femtosecond noncollinear optial parametric amplification in the MID-Infrared range with 1.25㎛ pumping F.Rotermund;V.Petrov https://doi.org/10.1143/JJAP.40.3195
  9. Trans. on EEM v.2 no.1 Optical properties of β-In₂S₃ and β-In₂S₃:$Co^{2-}$ thin films Hyung-Gon Kim;Nam-Oh Kim;Moon-Seog Jin;Seok-Kyun Oh;Wha-Tek Kim
  10. 전기전자재료학회논문지 v.10 no.2 $Zn_4GeSe_6$ 및 $Co^ {2-}$를 첨가한 $Zn_4GeSE_6 :Co^ {2-}$ 단결정의 광학적 특성 김덕태
  11. 전기전자재료학회논문지 v.11 no.9 코발트를 첨가한 $Cd_4GeS_6$ 단결정에서 에너지갭의 온도의존성 및 열역학적 함수 추정 김덕태
  12. Solid State Comn. v.94 Deep levels in $TlGaS_2$ single crystal Ho-Jun Song;Sang-Hyun Yun;Wha-Tek Kim https://doi.org/10.1016/0038-1098(94)00881-7
  13. Ustinov. Sov. J. Quantum Electron v.9 Growth and optical properties of mercury thiogallate V.V.Badikov;I.N.Matreev;V.L.Panyutin;S.M.Pschenichnikov;T.M.Repyakhova;O.V.Rychik;A.E.Rozenson;N.K.Trotsenko;N.D. https://doi.org/10.1070/QE1979v009n08ABEH009420
  14. Optical Processes in Semiconductors J. I.Pankov
  15. 연당 윤상현 교수 정년퇴임 기념 논문집 윤상현;송호준
  16. Solid State Comm. v.81 Green photoemission of a-Ga₂S₃ crystals T.Ando;K.Kase https://doi.org/10.1016/0038-1098(92)90814-P
  17. Photoconductivity of Solids R.H.Bube