Browse > Article
http://dx.doi.org/10.4313/JKEM.2003.16.11.969

A Study on the Optical Properties of HgGa2S4 Single Crystal  

이관교 (조선대학교 과학교육과)
이상열 (조선대학교 물리화학부)
강종욱 (조선대학교 물리화학부)
이봉주 (조선대학교 물리화학부)
김형곤 (조선이공대학 전기과)
현승철 (성화대학 안경광학과)
방태환 (성화대학 전기과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.11, 2003 , pp. 969-974 More about this Journal
Abstract
HgGa$_2$S$_4$ single crystals were grown by the chemical transport reaction method. The HgGa$_2$S$_4$ single crystal crystallized into a defect chalcopyrite structure (I 4). The lattice constants of the single crystal were found to be a = 5.635 $\AA$ and c = 10.473 $\AA$. The direct and indirect optical energy gaps were found to be 2.84eV and 2.78eV, respectively. Photoluminescence peaks of HgGa$_2$S$_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.
Keywords
$HgGa_{2}S_{4}$ : Chemical transport reaction method; Defect chalcopyrite structure; Optical energy gaps; Photoluminescence;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
1 Difference-frequency generation of intense femtosecond pulses in the mid-IR(4-12㎛)using HgGa₂S₄ and AgGaS₂ /
[ F.Rotermund;V.Petrov;F.Noack ] / Opt. Comm.   DOI   ScienceOn
2 /
[ J. I.Pankov ] / Optical Processes in Semiconductors
3 Femtosecond noncollinear optial parametric amplification in the MID-Infrared range with 1.25㎛ pumping /
[ F.Rotermund;V.Petrov ] / Jpn. J. Appl. Phys.   DOI
4 Deep levels in <TEX>$TlGaS_2$</TEX> single crystal /
[ Ho-Jun Song;Sang-Hyun Yun;Wha-Tek Kim ] / Solid State Comn.   DOI   ScienceOn
5 <TEX>$Zn_4GeSe_6$</TEX> 및 <TEX>$Co^ {2-}$</TEX>를 첨가한 <TEX>$Zn_4GeSE_6 :Co^ {2-}$</TEX> 단결정의 광학적 특성 /
[ 김덕태 ] / 전기전자재료학회논문지   과학기술학회마을
6 코발트를 첨가한 <TEX>$Cd_4GeS_6$</TEX> 단결정에서 에너지갭의 온도의존성 및 열역학적 함수 추정 /
[ 김덕태 ] / 전기전자재료학회논문지   과학기술학회마을
7 Optical properties of β-In₂S₃ and β-In₂S₃:<TEX>$Co^{2-}$</TEX> thin films /
[ Hyung-Gon Kim;Nam-Oh Kim;Moon-Seog Jin;Seok-Kyun Oh;Wha-Tek Kim ] / Trans. on EEM   과학기술학회마을
8 Mercury thiogallate mid-infrared femtoscond optical parametric gonerator pumped at 1.25㎛ by a Cr:rorsterite regenerative amplifier /
[ F.Rotermund;V.Petrov ] / Opt. Lett.   DOI
9 Synthesis and growth of HgGa₂S₄ crystals /
[ P.G.Schunemann;T.M.Pollak ] / J. Cryst. Growth   DOI   ScienceOn
10 Beyond the binaries-the chalcopyrite and related semiconducting compounds /
[ A.Miller;A.Mackinnon;D.Weaire ] / Solid State Phys.(Advances in Research and Applications)
11 Green photoemission of a-Ga₂S₃ crystals /
[ T.Ando;K.Kase ] / Solid State Comm.   DOI   ScienceOn
12 /
[ R.H.Bube ] / Photoconductivity of Solids
13 Optical and eletrical properties of ternary chalcogenides /
[ L.A.Beun;R.Nitsche;M.Lichtensteiger ] / Physica
14 Uber ternare challkogenide des Alum-miums, galliums und indiums mit zink, cadmium und quecksilber /
[ H.Hahn;G.Frank;W.Klingler;A.Storger;G.storger ] / Z. Anorg. Allg. Chem.   DOI
15 Growth and optical properties of mercury thiogallate /
[ V.V.Badikov;I.N.Matreev;V.L.Panyutin;S.M.Pschenichnikov;T.M.Repyakhova;O.V.Rychik;A.E.Rozenson;N.K.Trotsenko;N.D. ] / Ustinov. Sov. J. Quantum Electron   DOI   ScienceOn
16 /
[ 윤상현;송호준 ] / 연당 윤상현 교수 정년퇴임 기념 논문집
17 Production and properties of In/HgGa₂S₄ schottky barriers /
[ V. Yu. Rud;Yu. V. Rud;M.C.Ohmer;P.G.Schunemen ] / Sov. Phs. -Semicond.